onsemi-FGA30T65SHD
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December 2014
FGA30T65SHD
650 V, 30 A Field Stop Trench IGBT
Features
General Description
o
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : T
=175 C
Using novel field stop IGBT technology, Fairchild’s new series of
J
rd
field stop 3
generation IGBTs offer the optimum performance
Positive Temperature Co-efficient for Easy Parallel Operating
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
High Current Capability
Low Saturation Voltage: V
=1.6 V(Typ.) @ I
= 30 A
C
CE(sat)
100% of the Parts Tested for I
LM
(1)
High Input Impedance
Fast Switching
Applications
•
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Tighten Parameter Distribution
RoHS Compliant
C
G
G
C
E
TO-3PN
E
Absolute Maximum Ratings
T =
25°C unless otherwise noted
C
Symbol
Description
FGA30T65SHD
Unit
V
V
V
Collector to Emitter Voltage
650
20
30
CES
Gate to Emitter Voltage
V
GES
Transient Gate to Emitter Voltage
Collector Current
V
o
@ T
= 25
C
60
A
C
I
C
o
Collector Current
@ T
= 100
C
30
A
C
o
I
I
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
@ T
= 25
C
90
A
LM (1)
C
90
40
A
CM (2)
o
@ T
= 25
C
A
C
I
F
o
Diode Forward Current
@ T
= 100
C
20
A
C
I
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
90
A
FM (2)
o
@ T
= 25
C
238
W
W
C
P
D
o
@ T
= 100
C
119
C
o
T
T
-55 to +175
-55 to +175
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1. V
= 400 V, V
= 15 V, I
=90 A, R
= 30
Inductive Load
CC
GE
C
G
2. Repetitive
rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
1
Thermal Characteristics
Symbol
Parameter
FGA30T65SHD
Unit
o
R
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.63
1.71
40
C
/
W
JC
JC
JA
o
C
/
W
o
C
/
W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packaging
Method Reel
Size Tape
Width
Quantity
FGA30T65SHD
FGA30T65SHD
TO-3PN
Tube
–
–
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
I
= 0V, I
= 1 mA
650
–
–
–
–
V
CES
GE
C
BV
T
Temperature Coefficient of Breakdown
Voltage
o
CES
/
o
= 1 mA, Reference to 25
C
0.6
V/ C
C
J
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0 V
–
–
–
–
250
A
CES
CE
GE
CES
GE
I
, V
= 0 V
±400
nA
GES
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 30 mA, V
= V
GE
4.0
–
5.5
1.6
7.5
2.1
V
V
GE(th)
C
C
C
CE
= 30 A
,
V =
15 V
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 30 A
,
V =
15 V,
GE
–
2.14
–
V
o
T
= 175 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
–
–
–
1558
64
–
–
–
pF
pF
pF
ies
V
= 30 V
V =
0 V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
19
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
14.4
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
r
Turn-Off Delay Time
Fall Time
52.8
9.6
d(off)
f
V
R
= 400 V, I
= 30 A,
CC C
= 6
, V
= 15 V,
G
GE
o
Inductive Load, T
= 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
598
167
765
14.4
19.2
59.2
8
on
off
ts
t
t
t
t
d(on)
r
Turn-Off Delay Time
Fall Time
d(off)
f
V
R
= 400 V, I
= 30 A,
CC C
= 6
, V
= 15 V,
G
GE
o
Inductive Load, T
= 175 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
992
303
1295
on
off
ts
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
2
Electrical Characteristics of the IGBT
(Continued)
Symbol Parameter
Test Conditions
Min.
Typ.
54.7
9.6
Max Unit
Q
Q
Q
Total Gate Charge
–
–
–
–
–
–
nC
nC
nC
g
V
V
= 400 V, I
= 30 A,
= 15 V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
ge
gc
20.3
Electrical Characteristics of the Diode
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
2.2
Max Unit
o
T
T
T
T
= 25 C
–
–
–
–
–
–
–
2.7
C
C
C
C
C
C
C
V
Diode Forward Voltage
I =
20 A
F
V
FM
rec
o
= 175
C
1.94
50
–
o
E
t
Reverse Recovery Energy
= 175
C
–
–
–
–
–
uJ
ns
o
= 25 C
31.8
192
50.6
699
Diode Reverse Recovery Time
I =20
A, dI
/dt = 200 A/
s
rr
F
F
o
T
T
T
= 175
C
o
= 25 C
Q
Diode Reverse Recovery Charge
nC
rr
o
= 175
C
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
4
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figur
e
1
5
.
L
oa
d
C
urren
t
V
s
.
F
requency
Figur
e
1
6
.
S
O
A
C
haracteristics
Figur
e
1
7
.
F
orwar
d
C
haracteristics
Figur
e
1
8
.
R
evers
e
R
ecover
y
C
urrent
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
6
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
P
DM
t
1
t
2
Figure 22.Transient Thermal Impedance of Diode
P
DM
t
1
t
2
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
7
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW
ISE SPECIFIED
A) THIS
PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION
AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW
ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD
SEMICONDUCTOR.
R0.50
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I77
© Fairchild Semiconductor Corporation
