onsemi-FGA40N60UFDTU
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IGBT
FGA40N60UFD
Ultrafast IGBT
General Description
Features
Fairchild’s UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides
low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.3 V @ I
= 20A
CE(sat)
C
CO-PAK, IGBT with FRD : t
= 50ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-3P
G
C
E
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
FGA40N60UFD
Units
V
V
V
Collector-Emitter Voltage
600
±
20
CES
GES
Gate-Emitter Voltage
V
Collector Current
@ T
=
25
°
C
40
A
C
I
C
Collector Current
@ T
= 100
°
C
20
A
C
I
I
I
Pulsed Collector Current
160
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Maximum Lead
T
e
mp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
= 100
°
C
15
A
F
C
160
A
FM
P
@ T
=
25
°
C
160
W
W
°
C
°
C
D
C
@ T
= 100
°
C
64
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°
C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
—
Max.
Units
°
C
/
W
°
C
/
W
°
C
/
W
R
R
R
(IGBT)
0.77
1.7
40
θ
JC
θ
JC
θ
JA
(DIODE)
—
Thermal Resistance, Junction-to-Ambient
—
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
Electrical Characteristics of the IGBT
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coefficient of Break-
down Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 20mA, V
= V
GE
3.5
—
5.1
2.3
3.1
6.5
3.0
—
V
V
V
GE(th)
C
C
C
CE
= 20A
,
= 40A
,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
—
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
1075
170
50
—
—
—
pF
pF
pF
ies
V
= 30V V
= 0
V
,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
30
—
—
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
65
130
100
—
V
R
= 300
V
, I
=
2
0A,
C
d(off)
f
CC
= 10
Ω
, V
= 15V,
35
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
470
130
600
30
C
on
off
—
1000
—
ts
t
t
t
t
d(on)
r
37
—
Turn-Off Delay Time
Fall Time
110
80
200
250
—
V
= 300
V
, I
=
2
0A,
C
d(off)
f
CC
R
= 10
Ω
, V
= 15
V
,
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn
–
On Switching Loss
Turn
–
Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
500
310
810
77
C
on
off
ts
—
1200
150
30
40
—
Q
Q
Q
g
V
V
= 300
V
, I
=
2
0A,
CE
GE
C
20
ge
gc
= 15V
25
L
Measured 5mm from PKG
14
e
Electrical Characteristics of DIODE
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
—
Typ.
1.4
1.3
50
Max.
1.7
—
Units
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 15A
F
V
FM
—
=
—
95
—
t
Diode Reverse Recovery Time
ns
A
rr
—
74
=
—
4.5
6.5
80
6.0
—
Diode Peak Reverse Recovery
Current
I =
15A,
di/dt = 200A/us
F
I
rr
—
=
—
180
—
Q
Diode Reverse Recovery Charge
nC
rr
—
220
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
160
120
80
40
0
80
70
60
50
40
30
20
10
0
Common Emitter
Common Emitter
V
GE
=15V
℃
Tc = 25
20V
℃
℃
Tc= 25
15V
Tc= 125
12V
V
GE
= 10V
0.5
0
2
4
6
8
1
10
Collector-Emitter Voltage,V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
4
30
Common Emitter
Vcc = 300V
Vge=15V
Load Current : peak of square wave
25
20
15
10
5
3
40A
20A
2
1
0
Ic=10A
Duty cycle : 50%
℃
Tc = 100
Powe Dissipation = 32W
0
0
30
60
90
120
150
0.1
1
10
100
1000
℃
Case Temperature, T
C
[
]
Frequency [kHz]
Fig. 1
Fig3.Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
Common Emitter
℃
℃
T
C
= 125
T
C
= 25
16
12
8
16
12
8
40A
40A
20A
4
4
20A
I
C
= 10A
Ic=10A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
300
100
3000
2500
2000
1500
1000
500
Common Emitter
Common Emitter
V
GE
= 0V, f = 1MHz
±
15V
Vcc=300V,V
GE
Ic=20A
=
℃
T
C
= 25
Cies
Ton
Tr
℃
Tc =
25
℃
Tc = 125
Coes
Cres
10
0
200
1
10
Gate Resistance, R
G
(
100
30
1
10
Ω
Collector-Emitter Voltage, V
CE
(V)
)
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Common Emitter
±
15V
Vcc=300V,V
GE
Ic=20A
=
±
15V
Vcc=300V,V
GE
Ic=20A
=
1000
℃
Tc =
25
℃
Tc =
25
Eon
Eoff
℃
Tc = 125
Toff
℃
Tc = 125
100
Tf
Tf
100
50
20
200
200
1
10
Gate Resistance, R
G
(
100
1
10
Gate Resistance, R
G
(
100
Ω
Ω
)
)
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25
℃
T
C
= 125
℃
Toff
Ton
100
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
10
Tr
T
C
= 25
℃
Tf
T
C
= 125
℃
20
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, Ic (A)
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
15
12
9
3000
1000
Common Emitter
Ω
R
L
=15
℃
)
(Tc=25
300V
200V
Eon
Eoff
Vcc=100V
100
6
Common Emitter
Eoff
±
15V
V
CC
= 300V, V
GE
=
3
R
G
= 10
Ω
℃
℃
T
C
= 25
T
C
= 125
10
0
10
15
20
25
30
35
40
0
30
60
90
120
Collector Current , Ic (A)
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
500
100
I
C
MAX. (Pulsed)
100
50us
100us
I
C
MAX. (Continuous)
㎳
1
10
1
10
DC Operation
Single Nonrepetitive
1
℃
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
10 100
Collector-Emitter Voltage,
V
CE
[V]
0.1
0.1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.01
1E-3
0.1
0.05
0.02
0.01
Pdm
single pulse
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
100
10
1
℃
℃
T
C
T
C
= 100
= 25
V
R
= 200V
I
F
= 15A
100
10
1
T
C
= 25
℃
T
C
= 100
℃
0
1
2
3
100
1000
Forward Voltage Drop, V
F
[V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
800
120
V
R
= 200V
I
F
= 15A
V
R
= 200V
I
F
= 15A
℃
℃
T
C
T
C
= 100
= 25
℃
℃
T
C
T
C
= 100
= 25
100
80
600
400
200
0
60
40
20
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
Package Dimensions
TO-3P
15.60
±
0.20
4.80
±
0.20
13.60
±
0.20
9.60
±
0.20
+0.15
ø3.20
±
0.10
1.50
–0.05
2.00
±
0.20
3.00
±
0.20
1.00
±
0.20
1.40
±
0.20
+0.15
–0.05
0.60
5.45TYP
[5.45
±
0.30
]
5.45TYP
[5.45
±
0.30
]
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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Contents
•
General description
•
Features
•
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(PCNs)
•
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•
Applications
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datasheet
•
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Quality and reliability
Design center
General description
Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs)
provides low conduction and switching losses. The UFD series is designed
for applications such as motor control and general inverters where high
speed switching is a required feature.
e-mail this datasheet
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Print version
Features
z
z
High speed switching
Low saturation voltage : V
= 2.3 V @ I
= 20A
C
CE(sat)
z
z
High input impedance
CO-PAK, IGBT with FRD : t
= 50ns (typ.)
rr
back to top
Applications
z
AC & DC motor controls, general purpose inverters, robotics, and
servo controls.
back to top
Product status/pricing/packaging
Product
Product status
Pb-free Status
Pricing* Package
type Leads Packing
method
$4.49
TO-3P
RAIL
Package Marking Convention**
Line 1:
(Fairchild logo)
$Y
FGA40N60UFDTU
Full Production
3
Line 2: FGA40N60 Line 3: UFD&3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild’s on-line samples program. If there is no sample button, please
contact a
Fairchild distributor
to obtain samples
Indicates product with Pb-free second-level interconnect. For more information
click here.
Package marking information for product FGA40N60UFD is available.
Click here for more information
.
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