onsemi-FGAF20S65AQ
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650
V
, 8 A
FFSD0865B-F085
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
V
I
F
RRM
650 V
8.0 A
Features
•
Max Junction Temperature 175
°
C
•
Avalanche Rated 33 mJ
•
High Surge Current Capacity
•
Positive Temperature Coefficient
•
Ease of Paralleling
1., 3. Cathode
2. Anode
Schottky Diode
•
No Reverse Recovery / No Forward Recovery
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
Automotive HEV
−
EV Onboard Chargers
•
Automotive HEV
−
EV DC
−
DC Converters
DPAK3 (TO
−
252, 3 LD)
CASE 369AS
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Value
650
33
Unit
V
MARKING DIAGRAM
Peak Repetitive Reverse Voltage
V
RRM
Single Pulse Avalanche Energy (T
= 25
°
C,
E
AS
mJ
J
I
= 11.5 A, L = 0.5 mH, V = 50 V)
L(pk)
$Y&Z&3&K
FFS
D0865B
Continuous Rectified Forward
Current
T
T
< 153
< 135
I
8.0
11.6
577
A
A
C
F
C
Non
−
Repetitive Peak Forward
Surge Current
T
= 25
°
C,
= 10
m
s
I
FM
C
P
t
T
= 150
°
C,
= 10
m
s
538
42
C
P
t
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Non
−
Repetitive Forward Surge
Current (Half
−
Sine Pulse)
T
= 25
°
C
I
A
C
FSM
t
P
= 8.3 ms
Power Dissipation
T
= 25
°
C
P
tot
91
15
W
C
FFSD0865B
= Specific Device Code
T
C
= 150
°
C
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
ORDERING INFORMATION
this data sheet.
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction
−
to
−
Case
R
1.64
°
C/W
q
JC
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020
−
Rev. 1
FFSD0865B
−
F085/D
FFSD0865B
−
F085
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ON CHARACTERISTICS
V
Forward Voltage
I =
8.0 A, T
= 25
°
C
1.39
1.55
1.71
0.5
1.7
2.0
2.4
40
V
F
F
J
I =
8.0 A, T
= 125
°
C
F
J
I =
8.0 A, T
= 175
°
C
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 650
V
, T
=
2
5
°
C
m
A
J
= 650
V
, T
=
1
25
°
C
1.0
80
J
= 650
V
, T
=
1
75
°
C
2.0
160
J
CHARGES, CAPACITANCES & GATE RESISTANCE
Q
T
o
tal Capacitive Charge
V
C
V
R
V
R
V
R
= 400 V
22
336
39
nC
pF
C
C
= 1
V
, f =
1
00 kHz
= 200
V
, f =
1
00 kHz
= 400
V
, f =
1
00 kHz
tot
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PART MARKING AND ORDERING INFORMATION
†
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FFSD0865B
−
F085
FFSD0865B
DPAK
T
a
pe & Reel
330 mm
16 mm
2500 units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
FFSD0865B
−
F085
TYPICAL CHARACTERISTICS
1
0
−
6
8
6
4
2
0
T =
−
55
o
C
J
T =
2
5
o
C
J
1
0
−
7
T =
7
5
o
C
J
T =
125
o
C
J
T =
17
5
o
C
J
T =
175
o
C
J
T =
125
o
C
1
0
−
8
J
T =
7
5
o
C
J
T =
25
o
C
J
T =
−
55
o
C
J
1
0
−
9
100
0.0
0.4
0.8
1.2
1.6
2.0
200
300
400
500
600 650
V ,
FORWARD VOLTAGE (V)
F
V ,
REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
120
100
75
D = 0.1
90
60
30
0
D = 0.2
50
D = 0.3
D = 0.5
25
D = 0.7
D = 1
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
, CASE TEMPERATURE
(
o
C
)
, CASE TEMPERATURE
(
o
C
)
T
T
C
C
Figure 3. Current Derating
Figure 4. Power Derating
30
20
10
0
1000
100
10
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V ,
REVERSE VOLTAGE (V)
V ,
REVERSE VOLTAGE (V)
R
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
3
FFSD0865B
−
F085
TYPICAL CHARACTERISTICS
8
6
4
2
0
0
100
200
300
400
500
600 650
V ,
REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE
−
DESCENDING ORDER
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
0.01
D=0.01
SINGLE PULSE
10
−
5
0.001
10
−
6
10
−
4
t, RECTANGULAR PULSE DURATION (sec)
10
−
3
10
−
2
10
−
1
1
Figure 8. Junction
−
to
−
Case Transient Thermal Response
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO
−
252 3 LD)
CASE 369AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO
−
252 3 LD)
PAGE 1 OF 1
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:
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−
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−
9855
T
o
ll Free USA/Canada
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