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ypical” parameters which may be provided in
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FGB3440G2
–
F085 / FGD3440G2
–
F085
FGP3440G2
–
F085
®
EcoSPARK 2
335mJ, 400V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 335mJ at T
J
= 25
o
C
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Coil On Plug Applications
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R
1
G
A
T
E
JEDEC TO-252AA
D-Pak
R
2
G
EMITTER
COLLECTOR
(FLANGE)
E
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BV
CER
Collector to Emitter Breakdown Voltage (I
C
= 1mA)
BV
ECS
Emitter to Collector Voltage – Reverse Battery Condition (I
C
= 10mA)
E
SCIS25
Self Clamping Inductive Switching Energy (Note 1)
E
SCIS150
Self Clamping Inductive Switching Energy (Note 2)
400
28
V
335
mJ
mJ
A
195
I
C25
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 25°C
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 110°C
Gate to Emitter Voltage Continuous
26.9
25
I
C110
V
GEM
A
±10
V
Power Dissipation
T
o
tal, at T
C
= 25°C
Power Dissipation Derating, for T
C
> 25
o
C
166
W
P
D
1.1
W/
o
C
o
C
o
C
o
C
o
C
kV
T
J
Operating Junction
T
e
mperature Range
-40 to +175
-40 to +175
300
T
STG
T
L
Storage Junction
T
e
mperature Range
Max. Lead
T
e
mp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead
T
e
mp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100p
F
,
1
500
Ω
T
PKG
ESD
260
4
Publication Order Number:
@2014 Semiconductor Co
mponents Industries, LLC.
August-2017
,
Rev.
3
FGB3440G2-F085/D
Package Marking and Ordering Information
Device Marking
FGB3440G2
FGD3440G2
FGP3440G2
Device
Package
Reel Size
330mm
330mm
T
u
be
Tape Width
Quantity
FGB3440G2
–
F085
FGD3440G2
–
F085
FGP3440G2
–
F085
TO-263AB
TO-252AA
TO-220AB
24mm
16mm
N/A
800
2500
50
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off State Characteristics
I
CE
= 2mA, V
GE
= 0,
BV
CER
Collector to Emitter Breakdown Voltage
R
GE
= 1K
Ω
,
T
J
= -40 to 150
o
C
CE
= 10mA, V
GE
= 0V,
BV
CES
Collector to Emitter Breakdown Voltage
R
GE
= 0,
T
J
= -40 to 150
o
C
370 400 430
390 420 450
V
I
V
V
I
CE
= -20mA, V
GE
= 0V,
T
J
= 25°C
BV
ECS
Emitter to Collector Breakdown Voltage
BV
GES
Gate to Emitter Breakdown Voltage
28
–
–
I
GES
= ±2mA
±12 ±14
–
25
1
V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
–
–
–
μ
A
mA
V
CE
= 250V,
R
GE
=1K
Ω
I
CER
I
ECS
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
–
–
–
1
V
EC
= 24V,
mA
–
–
–
120
–
40
–
R
1
R
2
Series Gate Resistance
Ω
Ω
Gate to Emitter Resistance
10K
30K
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 6A, V
GE
= 4
V
,
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 10A, V
GE
= 4.5V,
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 15A, V
GE
= 4.5
V
,
L = 3.0 mHy, V
GE
= 5V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 150
o
C
–
–
–
1. 1
1. 2
V
V
V
1.3 1.45
1.6 1.75
E
SCIS
Self Clamped Inductive Switching
T
J
= 25
o
C
–
–
335
mJ
R
G
= 1K
Ω
, (Note 1)
Notes:
1: Self Clamping Inductive Switching Energy(E
SCIS25
) of 335mJ is based on the test conditions that is starting
T
J
=25
o
C; L=3mHy, I
SCIS
=15A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
2: Self Clamping Inductive Switching Energy (E
SCIS150
) of 195mJ is based on the test conditions that is starting
T
J
=150
o
C; L=3mHy, I
SCIS
=11.4A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Dynamic Characteristics
I
CE
= 10A, V
CE
= 12V,
GE
= 5V
Q
G(ON)
Gate Charge
–
24
–
nC
V
T
J
= 25
o
C
T
J
= 150
o
C
1.3
1.7
2.2
1.8
–
V
GE(TH)
Gate to Emitter Threshold Voltage
I
CE
= 1mA, V
CE
= V
GE,
V
CE
= 12V, I
CE
= 1
0 A
V
V
0.75 1.2
V
GEP
Gate to Emitter Plateau Voltage
–
2 . 8
Switching Characteristics
t
d(ON)R
Current Turn-On Delay Time-Resistive
V
CE
= 14V, R
L
= 1
Ω
GE
= 5V,
R
G
= 1K
Ω
T
J
= 25
o
C,
–
–
–
–
1.0
2.0
5 . 3
2.3
4
7
μ
s
μ
s
μ
s
μ
s
V
t
rR
Current Rise Time-Resistive
t
d(OFF)L
Current Turn-Off Delay Time-Inductive
V
CE
= 300V, L = 1mH,
1 5
15
V
GE
= 5V,
R
G
= 1K
Ω
I
t
fL
Current Fall Time-Inductive
CE
=6.5A, T
J
= 25
o
C,
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
–
–
0.9
o
C/W
3
Typical Performance Curves
100
30
20
10
0
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
T
J
= 25
o
C
T
J
= 25
o
C
10
T
J
= 150
o
C
T
J
= 150
o
C
SCIS Curves valid for V
clamp
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
1
10
100
t
CLP
, TIME IN CLAMP
(
μ
S
)
1000
0
3
6
9
12
15
L, INDUCTANCE
(
mHy
)
Figure 1.
Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2.
Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.50
I
CE
= 6A
I
CE
= 10A
V
GE
= 3.7V
1.45
V
GE
= 4.0V
V
GE
= 4.0V
1.15
1.40
1.35
1.30
1.25
1.20
1.15
1.10
V
GE
= 3.7V
1.10
V
GE
= 8V
V
GE
= 5V
V
GE
= 4.5V
V
GE
= 5V
1.05
V
GE
= 8V
V
GE
= 4.5V
1.00
-75 -50 -25
0
25 50 75
100 125 150 175
-75 -50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERTURE
(
o
C
)
T
J
, JUNCTION TEMPERTURE
(
o
C
)
Figure 3.
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4.
Collector to Emitter On-State Voltage
vs. Junction Temperature
30
30
V
GE
= 8.0V
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
20
20
V
GE
= 3.7V
V
GE
= 3.7V
10
10
T
J
= -40
o
C
T
J
= 25
o
C
0
0
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6.
Collector to Emitter On-State Voltage
vs. Collector Current
4
(Continued)
Typical Performance Curves
30
30
20
10
0
V
GE
= 8.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
CE
= 5V
20
V
GE
= 3.7V
T
J
= 175
o
C
10
0
T
J
= 25
o
C
T
J
= -40
o
C
3
T
J
= 175
o
C
3 4
0
1
2
1
2
4
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8.
Transfer Characteristics
30
2.0
1.8
1.6
1.4
1.2
1.0
V
GE
= 4.0V
V
CE
=
V
GE
= 1m
A
I
CE
20
10
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75
100 125 150 175
T
C
, CASE TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 9.
DC Collector Current vs. Case
Temperature
Figure 10.
Threshold Voltage vs. Junction
Temperature
10000
12
Resistive t
OFF
Inductive t
OFF
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Ω
V
ECS
= 24V
10
8
1000
100
10
6
V
CES
= 300V
4
1
2
Resistive t
ON
V
CES
= 250V
0.1
-50 -25
0
25
0
25 50 75
100 125 150 175
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Leakage Current vs. Junction
Temperature
Figure 12.
Switching Time vs. Junction
Temperature
5
(Continued)
Typical Performance Curves
2000
1600
10
8
I
CE
= 10A, T
J
= 25
o
C
f = 1MHz
V
GE
= 0V
V
CE
= 6V
C
IES
1200
6
V
CE
= 12V
800
4
C
RES
400
2
C
OES
0
0
5
10
15
20
25
0
10
20
30
40
50
60
70
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q
g
,
GATE CHARGE(nC)
Figure 13.
Capacitance vs. Collector to Emitter
Voltage
Figure 14.
Gate Charge
440
I
CER
= 10mA
420
T
J
= -40
o
C
T
J
= 25
o
C
400
380
T
J
= 175
o
C
10
100
1000
6000
R
G
, SERIES GATE RESISTANCE
(
Ω
)
Figure 15.
Break down Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE – DESCENDING ORDER
D = 0.50
0.2
P
DM
0.1
0.05
0.02
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JC
θ
JC C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 16.
IGBT Normalized Transient Thermal Impedance, Junction to Case
6
Test Circuit and Waveforms
L
V
CC
R
or
L
LOAD
C
C
R
G
G
R
G
= 1K
Ω
PULSE
GEN
+
–
G
DUT
E
V
CC
DUT
5V
E
Figure 17.
Inductive Switching Test Circuit
Figure 18.
t and
t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
SCIS
C
V
CC
VARY t
TO OBTAIN
P
+
–
R
REQUIRED PEAK I
G
SCIS
V
G
CC
DUT
V
GE
E
t
P
I
0V
SCIS
0
0.01
Ω
t
AV
Figure 19.
Energy Test Circuit
Figure 20.
Energy Waveforms
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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