onsemi-FGB5N60UNDF
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September 2013
FGB5N60UNDF
600 V, 5 A
Short Circuit Rated IGBT
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGB
T
s
o
ffer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Features
•
•
•
•
•
Short Circuit Rated 10 us
High Current Capability
High Input Impedance
Fast Switching
RoHS Compliant
Applications
•
Sewing Machine, CNC, Home Appliances, Motor Control
C
COLLECTOR
(FLANGE)
G
TO-263AB/D
2
-PAK
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
± 20
10
V
V
A
A
A
@ T
C
= 25
o
C
@ T
C
= 100
o
C
I
C
I
CM (1)
I
F
Collector Current
5
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Pulsed Collector Current
15
Diode Forward Current
5
2.5
A
A
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
73.5
W
W
o
C
o
C
P
D
29.4
T
J
-55 to +150
-55 to +150
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
T
L
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
1.7
Unit
o
C
/
W
o
C
/
W
o
C
/
W
4.5
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
40
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
1
Package Marking and Ordering Information
Device Marking
Device
Package
Rel Size
Tape Width
Quantity
FGB5N60UNDF
FGB5N60UNDF
TO-263AB(D
2
-PAK)
–
50
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
I
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250
μ
A
600
–
–
–
–
1
V
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
–
–
mA
uA
I
GES
±10
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 5mA, V
CE
= V
GE
I
C
= 5A
,
V
GE
= 15V
I
C
= 5A
,
V
GE
= 15V,
5.5
–
6.8
1.9
8.5
2.4
V
V
V
CE(sat)
Collector to Emitter Saturation Voltage
–
2.3
–
V
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
181
28
7
pF
pF
pF
V
CE
= 30V V
GE
= 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5.4
1.9
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
25.4
101
0.08
0.07
0.15
5.2
ns
V
CC
= 400V, I
C
= 5A,
R
G
= 10
Ω
, V
GE
= 15V,
202
ns
Inductive Load, T
C
= 25
o
C
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
2.3
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
26.6
125
0.15
0.09
0.24
ns
V
CC
= 400V, I
C
= 5A,
G
= 10
Ω
, V
GE
= 15V,
Inductive Load, T
C
= 125
o
C
R
ns
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
mJ
mJ
mJ
V
CC
= 350V,
G
= 100
Ω
, V
GE
= 15V,
C
= 150
o
C
T
sc
Short Circuit Withstand Time
R
T
10
–
–
μ
s
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
2
Electrical Characteristics of the IGBT
T =
25°C unless otherwise noted
C
Q
g
T
o
tal Gate Charge
–
–
–
12.1
1.7
nC
nC
nC
V
V
CE
= 400V, I
C
= 5A,
GE
= 15V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
7.2
Electrical Characteristics of the Diode
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.7
1.6
35
Max Unit
T
T
T
C
= 25
o
C
C
= 125
o
C
C
= 25
o
C
–
–
–
–
–
–
2.2
V
FM
Diode Forward Voltage
I
F
= 5A
V
–
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
T
C
= 125
o
C
C
= 25
o
C
T
C
= 125
o
C
87
I
F
=5A, dI
F
/dt = 200A/
μ
s
T
71
Q
rr
nC
240
–
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
30
30
T
C
= 25
o
C
20V
T
C
= 125
o
C
17V
20V
17V
15V
15V
20
20
10
0
V
GE
= 12V
V
GE
= 12V
10
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
20
20
Common Emitter
V
GE
= 15V
Common Emitter
V
CE
= 20V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
15
15
10
5
10
5
0
0
0
1
2
3
4
5
6
0
3
6
9
12
15
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage,V
GE
[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
V
GE
= 15V
Common Emitter
T
C
= 25
o
C
10A
16
12
8
10A
5A
5A
I
C
= 2.5A
I
C
= 2.5A
4
0
25
50
75
100
125
4
8
12
16
20
Case Temperature, T
C
[
o
C]
Gate-Emitter Voltage, V
GE
[V]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
1000
20
Common Emitter
T
C
= 125
o
C
C
ies
16
12
8
10A
C
oes
100
5A
I
C
= 2.5A
8
C
res
10
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
4
1
0
1
10
30
4
12
16
20
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
20
10
μ
s
400V
10
12
100
μ
s
V
CC
= 100V
1ms
10 ms
200V
9
DC
1
6
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3
Common Emitter
T
C
= 25
o
C
0.1
3. Single Pulse
0
0.05
0
5
10
15
1
10
100
1000
Gate Charge, Q
g
[nC]
Collector-Emitter Voltage, V
CE
[V]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
100
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 5A
T
C
= 25
o
C
T
C
= 125
o
C
t
f
100
t
r
10
t
d(off)
t
d(on)
Common Emitter
V
CC
= 400V, V
GE
= 15V
10
1
I
C
= 5A
T
C
= 25
o
C
T
C
= 125
o
C
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
5
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
10
1000
t
d(on)
t
f
100
t
r
1
t
d(off)
10
Common Emitter
V
GE
= 15V, R
G
=10
Ω
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
0.1
T
C
= 25
o
C
T
C
= 125
o
C
1
2
4
6
8
10
2
4
6
8
10
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collecto
r
C
urrent
1000
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 5A
T
C
= 25
o
C
T
C
= 125
o
C
E
on
100
E
on
E
off
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
100
50
T
C
= 25
o
C
T
C
= 125
o
C
E
off
10
2
4
6
8
10
0
10
20
30
40
50
Collector Current, I
C
[A]
Gate Resistance, R
G
[
Ω
]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
20
30
10
10
T
C
= 125
o
C
T
C
= 75
o
C
T
C
= 25
o
C
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
1
1
1
10
100
1000
0
1
2
3
4
5
Forward Voltage, V
F
[V]
Collector-Emitter Voltage, V
CE
[V]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
6
Typical Performance Characteristics
Figure 19. Reverse
Current
Figure 20.
Stored Charge
100
0.25
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 125
o
C
10
0.20
200A/
μ
s
1
0.15
0.10
0.05
0.00
di
F
/dt = 100A/
μ
s
T
C
= 75
o
C
0.1
200A/
μ
s
0.01
T
C
= 25
o
C
di
F
/dt =
100A/
μ
s
0.001
0
1
2
3
4
5
0
150
300
450
600
Forwad Current, I
F
[A]
Reverse Voltage, V
R
[V]
Figure 21. Reverse Recovery Time
120
T
C
= 25
o
C
di
F
/dt = 100A/
μ
s
T
C
= 125
o
C
90
200A/
μ
s
60
di
F
/dt = 100A/
μ
s
30
200A/
μ
s
0
0
1
2
3
4
5
Forward Current, I
F
[A]
Figure 22. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.02
0.1
P
DM
0.01
single pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
7
Mechanical Dimensions
Figure 23.
TO-263 2L (D2PAK) – 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
8
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intended to be an exhaustive list of all such trademarks.
AccuPower™
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BitSiC™
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CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μ
SerDes™
SMART START™
®
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®
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SuperSOT™-3
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®
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®
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OPTOLOGIC
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FACT
FAST
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®
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
9
