onsemi-FGD3040G2-F085C
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FGD3040G2-F085C
FGB3040G2-F085C
EcoSPARK
ꢀ
2 Ignition IGBT
300 mJ, 400
V
, N
−
Channel Ignition IGBT
Features
•
SCIS Energy = 300 mJ at T
= 25
°
C
J
•
Logic Level Gate Drive
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free and are RoHS Compliant
COLLECTOR
Applications
R
1
GATE
•
Automotive Ignition Coil Driver Circuits
•
High Current Ignition System
•
Coil on Plug Application
R
2
EMITTER
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
V
BV
400
Collector to Emitter Breakdown
Voltage (IC = 1 mA)
CER
V
mJ
mJ
A
BV
28
300
170
41
Emitter to Collector Voltage
−
Reverse
ECS
Battery Condition (IC = 10 mA)
E
ISCIS =
14.2 A, L = 3.0 mHy,
SCIS25
C
2
DPAK3
CASE 369AS
D PAK
−
3
E
ISCIS =
10.8 A, L = 3.0 mHy,
SCIS150
CASE 418AJ
C
IC25
Collector Current Continuous
at VGE = 5.0
V
, T
=
2
5
°
C
MARKING DIAGRAM
C
A
IC110
25.6
Collector Current Continuous
at VGE = 5.0
V
, T
= 110
°
C
C
AYWW
XXX
XXXXXG
V
W
V
10
Gate to Emitter Voltage Continuous
GEM
PD
Power Dissipation
T
o
tal, T
= 25
°
C
150
1
C
W/
°
C
°
C
Power Dissipation Derating, T
> 25
°
C
C
A
Y
WW
XXXX
G
= Assembly Location
=
Y
e
ar
= Work Week
= Device Code
= Pb
−
Free Package
T , T
J
−
55 to +175
Operating Junction and Storage
T
e
mperature
STG
°
C
°
C
kV
kV
T
L
300
260
4
Lead
T
e
mperature for Soldering
Purposes (1/8” from case for 10 s)
T
Reflow Soldering according to
JESD020C
PKG
ORDERING INFORMATION
of this data sheet.
ESD
HBM
−
Electrostatic Discharge Voltage
at 100 p
F
,
1
500
W
2
CDM
−
Electrostatic Discharge Voltage
at 1
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self
clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting T
= 25
°
C, L = 3 mHy, ISCIS = 14.2 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self
Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting T
= 150
°
C, L = 3mHy, ISCIS =
10.8 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2019
−
Rev. 1
FGX3040G2
−
F085C//D
FGD3040G2
−
F085C
THERMAL RESISTANCE RATINGS
Characteristic
Junction
−
to
−
Case – Steady State (Drain)
Symbol
Max
Units
R
1
°
C/W
q
JC
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
BV
BV
Collector to Emitter Breakdown
Voltage
I
= 2 mA, V
= 0
V
,
GE
GE
370
390
28
400
430
450
−
V
V
V
CER
CE
R
= 1 k
W
,
T =
−
40 to 150
°
C
J
Collector to Emitter Breakdown
Voltage
I
= 10 mA, V
GE
= 0
V
,
= 0
V
,
420
CES
CE
GE
R
= 0,
T =
−
40 to 150
°
C
J
Emitter to Collector Breakdown
Voltage
I
=
−
75 mA, V
GE
−
ECS
CE
T =
25
°
C
J
BV
I
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
=
2 mA
12
−
14
−
−
25
1
V
GES
GES
V
R
= 175 V
= 1 k
W
T =
25
°
C
m
A
mA
mA
CER
CE
J
GE
T =
150
°
C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V
T =
25
°
C
J
−
−
1
ECS
EC
T =
150
°
C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
W
W
1
2
Gate to Emitter Resistance
10K
30K
ON CHARACTERISTICS
V
V
V
Collector to Emitter Saturation
Voltage
I
I
I
= 6 A, V
= 4
V
, T
=
2
5
°
C
−
−
−
1.15
1.35
1.68
1.25
1.50
1.85
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
CE
CE
GE
J
Collector to Emitter Saturation
Voltage
= 10 A, V
= 15 A, V
= 4.5
V
, T
=
1
50
°
C
J
GE
GE
Collector to Emitter Saturation
Voltage
= 5
V
, T
=
1
50
°
C
J
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
V
= 10 A, V
= 1 mA
= 12
V
, V
= 5 V
−
1.3
0.75
−
21
1.5
1.2
2.8
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
CE
GE
V
Gate to Emitter Threshold Voltage
T =
25
°
C
J
GE(TH)
CE
= V
GE
CE
T =
150
°
C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I
= 10 A
V
GEP
CE
SWITCHING CHARACTERISTICS
td
Current Turn
−
On Delay
Time
−
Resistive
V
V
J
= 14
V
, R
= 1
W
,
−
0.9
4
m
s
(ON)R
CE
GE
L
= 5
V
, R
= 470
W
,
G
T =
25
°
C
t
rR
Current Rise Time
−
Resistive
−
−
1.9
4.8
7
td
(OFF)L
Current Turn
−
Off Delay
Time
−
Inductive
V
V
CE
= 300
V
, L = 1
m
H,
10
CE
GE
= 5
V
, R
= 470
W
,
G
I
= 6.5 A, T
= 25
°
C
J
t
fL
Current Fall Time
−
Inductive
−
2.0
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Package
Shipping
FGD3040G2
−
F085C
DPAK
(Pb
−
Free)
2500 Units /
T
a
pe & Reel
2
FGB3040G2
−
F085C
D PAK
800 Units /
T
a
pe & Reel
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
FGD3040G2
−
F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive
Switching Current
vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On
−
State Voltage
Figure 4. Collector to Emitter On
−
State Voltage
vs. Junction Temperature
vs. Junction Temperature
Figure 5. Collector to Emitter On
−
State Voltage
Figure 6. Collector to Emitter On
−
State Voltage
vs. Collector Current
vs. Collector Current
3
FGD3040G2
−
F085C
TYPICAL CHARACTERISTICS
(continued)
Figure 7. Collector to Emitter On
−
State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
4
FGD3040G2
−
F085C
TYPICAL CHARACTERISTICS
(continued)
Figure 13. Switching Time vs. Junction Temperature
Figure 14. Capacitance vs. Collector to Emitter
Figure 15. Break Down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
5
FGD3040G2
−
F085C
TEST CIRCUIT AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. t
ON
and t
OFF
Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO
−
252 3 LD)
CASE 369AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO
−
252 3 LD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
=
Y
e
ar
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb
−
Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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