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FGD3325G2
–
F085
®
EcoSPARK 2
330mJ, 250V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 330mJ at T
J
= 25
o
C
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252
D-Pak
Publication Order Number:
FGD3325G2-F085/D
@2015
Semiconductor Components Industries, LLC.
August-2017,
Rev.
2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BV
CER
Collector to Emitter Breakdown Voltage (I
C
= 1mA)
250
BV
ECS
Emitter to Collector Voltage – Reverse Battery Condition (I
C
= 10mA)
28
V
E
SCIS25
I
SCIS
= 14.8A, L = 3.0mHy, R
GE
= 1K
Ω
E
SCIS150
I
SCIS
= 11.4A, L = 3.0mHy, R
GE
= 1K
Ω
T
C
= 25°C
330
mJ
mJ
A
T
C
= 150°C
195
I
C25
Collector Current Continuous, at V
GE
= 5.0V, T
C
= 25°C
Collector Current Continuous, at V
GE
= 5.0V, T
C
= 110°C
Gate to Emitter Voltage Continuous
41
I
C110
V
GEM
25
A
±10
V
Power Dissipation
T
o
tal, at T
C
= 25°C
Power Dissipation Derating, for T
C
> 25
o
C
T
C
= 25°C
T
C
> 25°C
150
W
P
D
1.0
W/
o
C
o
C
o
C
o
C
o
C
kV
kV
T
J
Operating Junction
T
e
mperature Range
-55 to +175
T
STG
T
L
Storage Junction
T
e
mperature Range
-55 to +175
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Reflow soldering according to JESD020C
300
260
4
T
PKG
HBM-Electrostatic Discharge Voltage at100p
F
,
1
500
Ω
CDM-Electrostatic Discharge Voltage at 1
Ω
ESD
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
16mm
Quantity
FGD3325G2
FGD3325G2
–
F085
TO252
330mm
2500 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off State Characteristics
I
CE
= 2mA, V
GE
= 0,
BV
CER
Collector to Emitter Breakdown Voltage
R
GE
= 1K
Ω
,
T
J
= -40 to 150
o
C
CE
= 10mA, V
GE
= 0V,
BV
CES
Collector to Emitter Breakdown Voltage
R
GE
= 0,
T
J
= -40 to 150
o
C
225
–
275
V
I
240
28
–
–
290
–
V
V
I
CE
= -75mA, V
GE
= 0V,
T
J
= 25°C
BV
ECS
Emitter to Collector Breakdown Voltage
BV
GES
Gate to Emitter Breakdown Voltage
I
GES
= ±2mA
±12 ±14
–
25
1
V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
–
–
–
μ
A
mA
V
CE
= 175V, R
GE
= 1K
Ω
I
CER
I
ECS
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
–
–
–
1
V
EC
= 24V,
mA
–
–
–
120
–
40
–
R
1
R
2
Series Gate Resistance
Ω
Ω
Gate to Emitter Resistance
10K
30K
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 6A, V
GE
= 4
V
,
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 10A, V
GE
= 4.5V,
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 15A, V
GE
= 4.5
V
,
T
J
= 2
5
o
C
T
J
= 150
o
C
T
J
= 150
o
C
–
–
–
1 . 1 5
1 . 2 5
1.35 1.50
1.68 1.85
V
V
V
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Dynamic Characteristics
I
CE
= 10A, V
CE
= 12V,
GE
= 5V
Q
G(ON)
Gate Charge
–
21
–
nC
V
T
J
= 25
o
C
T
J
= 150
o
C
1.3
1.5
2.2
1.8
–
V
GE(TH)
Gate to Emitter Threshold Voltage
I
CE
= 1mA, V
CE
= V
GE,
V
CE
= 12V, I
CE
= 1
0 A
V
V
0.75 1.1
V
GEP
Gate to Emitter Plateau Voltage
–
2 . 7
Switching Characteristics
t
d(ON)R
Current Turn-On Delay Time-Resistive
V
CE
= 14V, R
L
= 1
Ω
GE
= 5V,
R
G
= 1K
Ω
T
J
= 25
o
C,
–
–
–
–
0.8
1.2
5.1
2.2
4
7
μ
s
μ
s
μ
s
μ
s
V
t
rR
Current Rise Time-Resistive
t
d(OFF)L
Current Turn-Off Delay Time-Inductive
V
CE
= 190V, L = 1mH,
15
15
V
GE
= 5V,
R
G
= 1K
Ω
I
t
fL
Current Fall Time-Inductive
CE
= 6.5A, T
J
= 25
o
C,
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
–
–
1
o
C/W
3
Typical Performance Curves
100
50
40
30
20
10
0
SCIS Curves valid for V
cl
a
m
p
V
o
l
t
a
ges of <275V
SCIS Curves valid for V
cl
a
m
p
V
o ltag es o f <275V
R
G
= 1K
Ω
,
V
GE
=
5
V
,
V
CE
= 10
0
V
R
G
=
1
K
Ω
,
V
GE
= 5V,
V
CE
= 10
0
V
T
J
= 25
o
C
10
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 1
5
0
o
C
1
10
0
1
0
1
t
CLP
,
T
I
ME IN CLAMP (
μ
S)
1
0
2
10
3
0
3
6
9
12
15
L, IND
U
C
TA
N
C
E (m
H
y
)
Figure 1.
Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2.
Self Clamped Inductive Switching
Current vs. Inductance
1.25
1.50
I
CE
= 10A
I
CE
= 6A
1.45
V
GE
= 3.7V
1.20
V
GE
= 4.0V
V
GE
= 3.7V
1.40
1.15
V
GE
= 4.0V
1.35
V
GE
= 4.5V
1.10
1.05
1.00
V
GE
= 8V
1.30
V
GE
= 5V
V
GE
= 5V
1.25
V
GE
= 8V
V
GE
= 4.5V
1.20
-75 -50 -25
0
25 50 75
100 125 150 175
-75 -50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERTURE (
o
C)
T
J
, JUNCTION TEMPERTURE (
o
C)
Figure 3.
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4.
Collector to Emitter On-State Voltage
vs. Junction Temperature
50
50
V
GE
= 8.0V
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 5.0V
40
40
30
20
10
0
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
30
20
10
T
J
= -40
o
C
T
J
= 25
o
C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6.
Collector to Emitter On-State Voltage
vs. Collector Current
4
(Continued)
Typical Performance Curves
30
50
40
30
20
10
0
V
GE
= 8.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
CE
= 5V
20
V
GE
= 3.7V
10
0
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= -40
o
C
T
J
= 175
o
C
4
0
1
2
3
1
2
3
4
5
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8.
Transfer Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
50
V
GE
=
5
V
V
CE
=
V
GE
= 1m
A
I
CE
40
30
20
10
0
25
50
75
1
0
0
1
2
5
150
1
7
5
-75 -50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE(
o
C)
T
C
, CASE TEMPE
R
A
TU
R
E
(
o
C)
Figure 9.
DC Collector Current vs. Case
Temperature
Figure 10.
Threshold Voltage vs. Junction
Temperature
10000
12
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Ω
V
ECS
= 24V
10
Inductive t
OFF
1000
100
10
8
V
CES
= 225V
6
4
2
0
Resistive t
OFF
Resistive t
ON
1
V
CES
= 175V
0.1
-75 -50 -25
0
25 50 75
100 125 150 175
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 11.
Leakage Current vs. Junction
Temperature
Figure 12.
Switching Time vs. Junction
Temperature
5
(Continued)
Typical Performance Curves
2000
1600
10
8
I
CE
= 10A, T
J
= 25
o
C
f = 1MHz
V
GE
= 0V
V
CE
= 6V
C
IES
1200
6
V
CE
= 12V
800
4
C
RES
400
2
C
OES
0
0
5
10
15
20
25
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q
g
,
GATE CHARGE(nC)
Figure 13.
Capacitance vs. Collector to Emitter
Voltage
Figure 14.
Gate Charge
260
I
CER
= 10mA
255
T
J
= -40
o
C
250
245
240
235
230
T
J
= 25
o
C
T
J
= 175
o
C
20
100
1000
6000
R
G
, SERIES GATE RESISTANCE (
Ω
)
Figure 15.
Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR
PULSE DURATION(s)
Figure 16.
IGBT Normalized Transient Thermal Impedance, Junction to Case
6
Mechanical Dimensions
D-PAK
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ON Semiconductor
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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