onsemi-FGD3440G2-F085
| Part # | onsemi-FGD3440G2-F085 |
Download  | onsemi-FGD3440G2-F085 |
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
®
EcoSPARK 2
335mJ, 400V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 335mJ at T
J
= 25
o
C
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Coil On Plug Applications
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R
1
G
A
T
E
JEDEC TO-252AA
D-Pak
R
2
G
EMITTER
COLLECTOR
(FLANGE)
E
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BV
CER
Collector to Emitter Breakdown Voltage (I
C
= 1mA)
BV
ECS
Emitter to Collector Voltage – Reverse Battery Condition (I
C
= 10mA)
E
SCIS25
Self Clamping Inductive Switching Energy (Note 1)
E
SCIS150
Self Clamping Inductive Switching Energy (Note 2)
400
28
V
335
mJ
mJ
A
195
I
C25
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 25°C
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 110°C
Gate to Emitter Voltage Continuous
26.9
25
I
C110
V
GEM
A
±10
V
Power Dissipation
T
o
tal, at T
C
= 25°C
Power Dissipation Derating, for T
C
> 25
o
C
166
W
P
D
1.1
W/
o
C
o
C
o
C
o
C
o
C
kV
T
J
Operating Junction
T
e
mperature Range
-40 to +175
-40 to +175
300
T
STG
T
L
Storage Junction
T
e
mperature Range
Max. Lead
T
e
mp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead
T
e
mp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100p
F
,
1
500
Ω
T
PKG
ESD
260
4
@2014 Fairchild Semiconductor Corporation
1
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Package Marking and Ordering Information
Device Marking
FGB3440G2
FGD3440G2
FGP3440G2
Device
Package
Reel Size
330mm
330mm
T
u
be
Tape Width
Quantity
FGB3440G2_F085
FGD3440G2_F085
FGP3440G2_F085
TO-263AB
TO-252AA
TO-220AB
24mm
16mm
N/A
800
2500
50
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off State Characteristics
I
CE
= 2mA, V
GE
= 0,
BV
CER
Collector to Emitter Breakdown Voltage
R
GE
= 1K
Ω
,
T
J
= -40 to 150
o
C
CE
= 10mA, V
GE
= 0V,
BV
CES
Collector to Emitter Breakdown Voltage
R
GE
= 0,
T
J
= -40 to 150
o
C
370 400 430
390 420 450
V
I
V
V
I
CE
= -20mA, V
GE
= 0V,
T
J
= 25°C
BV
ECS
Emitter to Collector Breakdown Voltage
BV
GES
Gate to Emitter Breakdown Voltage
28
–
–
I
GES
= ±2mA
±12 ±14
–
25
1
V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
–
–
–
μ
A
mA
V
CE
= 250V,
R
GE
=1K
Ω
I
CER
I
ECS
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
–
–
–
1
V
EC
= 24V,
mA
–
–
–
120
–
40
–
R
1
R
2
Series Gate Resistance
Ω
Ω
Gate to Emitter Resistance
10K
30K
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 6A, V
GE
= 4
V
,
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 150
o
C
–
–
–
1. 1
1. 2
V
V
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 10A, V
GE
= 4.5V,
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
CE
= 15A, V
GE
= 4.5
V
,
L = 3.0 mHy, V
GE
= 5V
1.3 1.45
1.6 1.75
E
SCIS
Self Clamped Inductive Switching
T
J
= 25
o
C
–
–
335
mJ
R
G
= 1K
Ω
, (Note 1)
Notes:
1: Self Clamping Inductive Switching Energy(E
SCIS25
) of 335mJ is based on the test conditions that is starting
T
J
=25
o
C; L=3mHy, I
SCIS
=15A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
2: Self Clamping Inductive Switching Energy (E
SCIS150
) of 195mJ is based on the test conditions that is starting
T
J
=150
o
C; L=3mHy, I
SCIS
=11.4A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
@2014 Fairchild Semiconductor Corporation
2
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Dynamic Characteristics
I
CE
= 10A, V
CE
= 12V,
GE
= 5V
Q
G(ON)
Gate Charge
–
24
–
nC
V
T
J
= 25
o
C
T
J
= 150
o
C
1.3
1.7
2.2
1.8
–
V
GE(TH)
Gate to Emitter Threshold Voltage
I
CE
= 1mA, V
CE
= V
GE,
V
CE
= 12V, I
CE
= 1
0 A
V
V
0.75 1.2
V
GEP
Gate to Emitter Plateau Voltage
–
2 . 8
Switching Characteristics
t
d(ON)R
Current Turn-On Delay Time-Resistive
V
CE
= 14V, R
L
= 1
Ω
GE
= 5V,
R
G
= 1K
Ω
T
J
= 25
o
C,
–
–
–
–
1.0
2.0
5 . 3
2.3
4
7
μ
s
μ
s
μ
s
μ
s
V
t
rR
Current Rise Time-Resistive
t
d(OFF)L
Current Turn-Off Delay Time-Inductive
V
CE
= 300V, L = 1mH,
1 5
15
V
GE
= 5V,
R
G
= 1K
Ω
I
t
fL
Current Fall Time-Inductive
CE
=6.5A, T
J
= 25
o
C,
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
–
–
0.9
o
C/W
@2014 Fairchild Semiconductor Corporation
3
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Typical Performance Curves
100
30
20
10
0
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
T
J
= 25
o
C
T
J
= 25
o
C
10
T
J
= 150
o
C
T
J
= 150
o
C
SCIS Curves valid for V
clamp
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
1
10
100
t
CLP
, TIME IN CLAMP
(
μ
S
)
1000
0
3
6
9
12
15
L, INDUCTANCE
(
mHy
)
Figure 1.
Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2.
Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.50
I
CE
= 6A
I
CE
= 10A
V
GE
= 3.7V
1.45
V
GE
= 4.0V
V
GE
= 4.0V
1.15
1.40
1.35
1.30
1.25
1.20
1.15
1.10
V
GE
= 3.7V
1.10
V
GE
= 8V
V
GE
= 5V
V
GE
= 4.5V
V
GE
= 5V
1.05
V
GE
= 8V
V
GE
= 4.5V
1.00
-75 -50 -25
0
25 50 75
100 125 150 175
-75 -50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERTURE
(
o
C
)
T
J
, JUNCTION TEMPERTURE
(
o
C
)
Figure 3.
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4.
Collector to Emitter On-State Voltage
vs. Junction Temperature
30
30
V
GE
= 8.0V
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
20
20
V
GE
= 3.7V
V
GE
= 3.7V
10
10
T
J
= -40
o
C
T
J
= 25
o
C
0
0
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6.
Collector to Emitter On-State Voltage
vs. Collector Current
@2014 Fairchild Semiconductor Corporation
4
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
(Continued)
Typical Performance Curves
30
30
20
10
0
V
GE
= 8.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
CE
= 5V
20
V
GE
= 3.7V
T
J
= 175
o
C
10
0
T
J
= 25
o
C
T
J
= -40
o
C
3
T
J
= 175
o
C
3 4
0
1
2
1
2
4
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7.
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8.
Transfer Characteristics
30
2.0
1.8
1.6
1.4
1.2
1.0
V
GE
= 4.0V
V
CE
=
V
GE
= 1m
A
I
CE
20
10
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75
100 125 150 175
T
C
, CASE TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 9.
DC Collector Current vs. Case
Temperature
Figure 10.
Threshold Voltage vs. Junction
Temperature
10000
12
Resistive t
OFF
Inductive t
OFF
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Ω
V
ECS
= 24V
10
8
1000
100
10
6
V
CES
= 300V
4
1
2
Resistive t
ON
V
CES
= 250V
0.1
-50 -25
0
25
0
25 50 75
100 125 150 175
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Leakage Current vs. Junction
Temperature
Figure 12.
Switching Time vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
5
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
(Continued)
Typical Performance Curves
2000
1600
10
8
I
CE
= 10A, T
J
= 25
o
C
f = 1MHz
V
GE
= 0V
V
CE
= 6V
C
IES
1200
6
V
CE
= 12V
800
4
C
RES
400
2
C
OES
0
0
5
10
15
20
25
0
10
20
30
40
50
60
70
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q
g
,
GATE CHARGE(nC)
Figure 13.
Capacitance vs. Collector to Emitter
Voltage
Figure 14.
Gate Charge
440
I
CER
= 10mA
420
T
J
= -40
o
C
T
J
= 25
o
C
400
380
T
J
= 175
o
C
10
100
1000
6000
R
G
, SERIES GATE RESISTANCE
(
Ω
)
Figure 15.
Break down Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE – DESCENDING ORDER
D = 0.50
0.2
P
DM
0.1
0.05
0.02
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JC
θ
JC C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 16.
IGBT Normalized Transient Thermal Impedance, Junction to Case
@2014 Fairchild Semiconductor Corporation
6
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Test Circuit and Waveforms
L
V
CC
R
or
L
LOAD
C
C
R
G
G
R
G
= 1K
Ω
PULSE
GEN
+
–
G
DUT
E
V
CC
DUT
5V
E
Figure 17.
Inductive Switching Test Circuit
Figure 18.
t and
t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
SCIS
C
V
CC
VARY t
TO OBTAIN
P
+
–
R
REQUIRED PEAK I
G
SCIS
V
G
CC
DUT
V
GE
E
t
P
I
0V
SCIS
0
0.01
Ω
t
AV
Figure 19.
Energy Test Circuit
Figure 20.
Energy Waveforms
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
7
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Rev. I68
