onsemi-FGD3440G2-F085V
| Part # | onsemi-FGD3440G2-F085V |
Download  | onsemi-FGD3440G2-F085V |
EcoSPARK
ꢀ
2 N-Channel
Ignition IGBT
335 mJ, 400 V
FGD3440G2-F085V
Features
•
SCIS Energy = 335 mJ at T
= 25
°
C
J
•
Logic Level Gate Drive
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free and are RoHS Compliant
COLLECTOR
Applications
•
Automotive Ignition Coil Driver Circuits
•
High Current Ignition System
•
Coil on Plug Application
R
1
GATE
R
2
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
EMITTER
Symbol
Parameter
Value
Unit
BV
Collector to Emitter Breakdown
400
V
CER
Voltage (I
= 1 mA)
C
4
BV
Emitter to Collector Voltage
−
Reverse
28
335
195
26.9
25
V
mJ
mJ
A
ECS
Battery Condition (I
= 10 mA)
C
2
1
E
Self Clamping Inductive Switching
3
SCIS25
DPAK (SINGLE GAUGE)
CASE 369C
E
Self Clamping Inductive Switching
SCIS150
I
Collector Current Continuous
C25
MARKING DIAGRAM
at V
= 4.0
V
, T
=
2
5
°
C
GE
C
I
Collector Current Continuous
at V
= 4.0
V
, T
= 110
°
C
A
C110
GE
C
AYWW
FGD
3440G2
V
Gate to Emitter Voltage Continuous
Power Dissipation
T
o
tal, T
= 25
°
C
10
166
V
W
GEM
P
D
C
Power Dissipation Derating, T
> 25
°
C
1.1
W/
°
C
°
C
C
A
Y
WW
= Assembly Location
=
Y
e
ar
= Work Week
T
J
Operating Junction and Storage
T
e
mperature
−
40 to +175
FGD3440G2= Device Code
T
T
Storage Junction
T
e
mperature Range
−
40 to +175
°
C
°
C
STG
T
L
Max. Lead
T
e
mperature for Soldering
(Leads at 1.6 mm from case for 10 s)
300
ORDERING INFORMATION
of this data sheet.
Max. Lead
T
e
mperature for Soldering
(Package Body for 10 s)
260
4
°
C
PKG
ESD
HBM
−
Electrostatic Discharge Voltage
at 100 p
F
,
1
500
W
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self
clamped inductive Switching Energy (ESCIS25) of 335 mJ is based on
the test conditions that is starting T
= 25
°
C, L = 3 mHy, ISCIS = 15 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self
Clamped inductive Switching Energy (ESCIS150) of 195 mJ is based on
the test conditions that is starting T
= 150
°
C, L = 3mHy, ISCIS =
11.4 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020
−
Rev. 3
FGD3440G2
−
F085V/D
FGD3440G2
−
F085V
THERMAL RESISTANCE RATINGS
Characteristic
Junction
−
to
−
Case – Steady State (Drain)
Symbol
Max
Units
R
0.9
°
C/W
q
JC
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
I
= 2 mA, V
= 0
V
,
GE
370
390
400
420
430
450
V
V
CER
CE
R
= 1 k
W
, T
=
−
40 to 150
°
C
GE
J
BV
Collector to Emitter Breakdown Voltage
I
= 10 mA, V
= 0
V
,
CES
CE
GE
R
= 0, T
=
−
40 to 150
°
C
GE
J
BV
BV
I
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
I
=
−
20 mA, V
= 0
V
, T
=
2
5
°
C
28
12
−
−
14
−
−
−
V
ECS
CE
GE
J
=
2 mA
V
GES
GES
V
R
= 250 V
= 1 k
W
T =
25
°
C
25
1
m
A
mA
mA
CER
CE
GE
J
T =
150
°
C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V
T =
25
°
C
J
−
−
1
ECS
EC
T =
150
°
C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
W
W
1
2
Gate to Emitter Resistance
10K
30K
ON CHARACTERISTICS
(Note 5)
Collector to Emitter Saturation Voltage
V
I
I
I
= 6 A, V
= 4
V
, T
=
2
5
°
C
−
−
−
1.1
1.3
1.6
1.2
V
CE(SAT)
CE
CE
CE
GE
J
= 10 A, V
= 15 A, V
= 4.5
V
, T
=
1
50
°
C
1.45
1.75
GE
J
= 4.5
V
, T
=
1
50
°
C
GE
J
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
= 10 A, V
= 1 mA
= 12
V
, V
= 5 V
−
1.3
0.75
−
24
1.7
1.2
2.8
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
V
Gate to Emitter Threshold Voltage
T =
25
°
C
J
GE(TH)
CE
V
= V
CE
GE
T =
150
°
C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I
= 10 A
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
t
Current Turn
−
On Delay Time
−
Resistive
Current Rise Time
−
Resistive
V
= 14
V
, R
= 1
W
, V
= 5
V
,
−
−
−
−
1.0
2.0
5.3
2.3
4
7
m
s
d(ON)R
CE
G
L
GE
R
= 1 K
W
, T
= 25
°
C
J
t
rR
d(OFF)L
t
Current Turn
−
Off Delay Time
−
Inductive
Current Fall Time
−
Inductive
V
CE
= 300
V
, L = 1
m
H, V
= 5 V,
10
15
GE
R
= 1K
W
, I
= 6.5 A, T
= 25
°
C
G
CE J
t
fL
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Diameter
Tape Width
Qty
FGD3440G2
FGD3440G2
−
F085V
DPAK (Pb
−
Free)
330 mm
16 mm
2500
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
FGD3440G2
−
F085V
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive
Switching Current
vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On
−
State Voltage
Figure 4. Collector to Emitter On
−
State Voltage
vs. Junction Temperature
vs. Junction Temperature
Figure 5. Collector to Emitter On
−
State Voltage
Figure 6. Collector to Emitter On
−
State Voltage
vs. Collector Current
vs. Collector Current
3
FGD3440G2
−
F085V
TYPICAL CHARACTERISTICS
(continued)
Figure 7. Collector to Emitter On
−
State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
50
45
40
35
30
25
20
V
= 5V
GE
15
10
5
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE(
o
C)
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
4
FGD3440G2
−
F085V
TYPICAL CHARACTERISTICS
(continued)
Figure 13. Switching Time vs. Junction Temperature
Figure 14. Capacitance vs. Collector to Emitter
Figure 15. Break Down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
5
FGD3440G2
−
F085V
TEST CIRCUIT AND WAVEFORMS
Figure 18. t
ON
and t
OFF
Switching Test Circuit
Figure 17. Inductive Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
4
ISSUE F
2
1
DATE 21 JUL 2015
3
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
b2
0.028 0.045
b3
0.180 0.215
MILLIMETERS
L4
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2
0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3
0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−−
0.040
0.155
−−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 9
0
5
CW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
GATE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. ANODE
3. CATHODE
4. ANODE
3. EMITTER
3. SOURCE
4. DRAIN
3. GATE
4. ANODE
XXXXXXG
ALYWW
AYWW
XXX
4. COLLECTOR
4. CATHODE
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
STYLE 8:
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
XXXXXG
PIN 1.
GATE
PIN 1.
N/C
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
3. ANODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
4. COLLECTOR
4. CATHODE
IC
Discrete
SOLDERING FOOTPRINT*
XXXXXX =
Device Code
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
6.20
0.244
3.00
0.118
2.58
0.102
*This information is generic. Please refer
to device data sheet for actual part
marking.
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
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−
Marking.pdf
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:
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o
ll Free USA/Canada
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