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April 2015
FGH40N65UFD_F085
650 V, 40 A Field Stop IGBT
Features
General Description
•
•
•
•
•
•
High Current Capability
Using novel field stop IGBT technology, Fairchild’s field stop
IGB
T
s
o
ffer the optimum performance for Automotive Chargers,
Inverter, and other applications where low conduction and
switching losses are essential.
Low Saturation Voltage: V
CE(sat)
= 1.8 V @ I
C
= 40 A
High Input Impedance
Fast Switching
RoHS Compliant
Qualified to Automotive Requirements of AEC-Q101
Applications
•
Automotive Chargers, Converters, High Voltage Auxiliaries
•
Inverters, PFC, UPS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
650
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
±
20
80
@ T
C
= 25
o
C
@ T
C
= 100
o
C
I
C
I
CM (1)
P
D
Collector Current
40
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Pulsed Collector Current
120
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
290
W
W
o
C
o
C
116
T
J
-55 to +150
-55 to +150
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
o
C
T
L
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ
0.43
1.45
40
Unit
o
C
/
W
o
C
/
W
o
C
/
W
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing
Method Reel
Size Tape
Width Quantity
FGH40N65UFDTU_F085 FGH40N65UFD
TO-247
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0 V, I
C
= 250
μ
A
650
–
–
–
–
V
Δ
BV
CES
Δ
T
J
T
e
mperature Coefficient of Breakdown
0.6
V/
o
C
V
GE
= 0 V, I
C
= 250
μ
A
Voltage
I
CES
I
GES
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
–
–
–
–
250
μ
A
±400
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250
μ
A, V
CE
= V
GE
I
C
= 40 A
,
V
GE
= 15 V
I
C
= 40 A
,
V
GE
= 15 V,
4.0
–
5.2
1.8
6.5
2.4
V
V
V
CE(sat)
Collector to Emitter Saturation Voltage
–
2.0
–
V
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
1860
200
65
–
–
–
pF
pF
pF
V
CE
= 30 V V
GE
= 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
23
35
–
–
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
126
26
–
ns
V
CC
= 400 V, I
C
= 40 A,
R
G
= 10
Ω
, V
GE
= 15 V,
60
–
ns
Inductive Load, T
C
= 25
o
C
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
1.28
0.50
1.78
21
mJ
mJ
mJ
ns
–
–
–
39
–
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
131
72
–
ns
V
CC
= 400 V, I
C
= 40 A,
G
= 10
Ω
, V
GE
= 15 V,
Inductive Load, T
C
= 125
o
C
R
–
ns
E
on
E
off
E
ts
Q
g
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
1.62
0.79
2.41
119
14
–
mJ
mJ
mJ
nC
nC
nC
–
–
–
V
V
CE
= 400 V, I
C
= 40 A,
GE
= 15 V
Q
ge
Q
gc
–
64
–
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
2
Electrical Characteristics of the Diode
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.80
1.71
65
Max Unit
T
C
= 25
o
C
–
–
–
–
–
–
2.6
V
FM
Diode Forward Voltage
I
F
= 20 A
V
T
C
= 125
o
C
–
T
T
T
C
= 25
o
C
C
= 125
o
C
C
= 25
o
C
–
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
215
145
775
–
I
F
=20 A, di
F
/dt = 200 A/
μ
s
–
Q
rr
nC
T
C
= 125
o
C
–
3
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
T
C
= 25
o
C
20V
T
C
= 125
o
C
15V
15V
12V
20V
12V
100
80
60
40
20
0
100
80
60
40
20
0
10V
10V
V
GE
= 8V
V
GE
= 8V
0.0
1.5
3.0
4.5
6.0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
V
CE
= 20V
T
C
= 25
o
C
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 125
o
C
100
100
T
C
= 125
o
C
80
80
60
40
20
0
60
40
20
0
0
2
4
6
8
10
12
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage,V
GE
[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
Common Emitter
V
GE
= 15V
Common Emitter
T
C
= -40
o
C
80A
16
12
8
40A
I
C
= 20A
80A
4
40A
I
C
= 20A
8
0
25
50
75
100
125
4
12
16
20
Collector-EmitterCase Temperature, T
C
[
o
C]
Gate-Emitter Voltage, V
GE
[V]
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
T
C
= 25
o
C
Common Emitter
T
C
= 125
o
C
16
12
8
16
12
8
80A
80A
40A
4
4
40A
I
C
= 20A
I
C
= 20A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
5000
Common Emitter
T
C
= 25
o
C
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
12
4000
C
ies
200V
V
CC
= 100V
300V
9
6
3
0
3000
C
oes
2000
1000
0
C
res
0
50
100
150
0.1
1
10
30
Gate Charge, Q
g
[nC]
Collector-Emitter Voltage, V
CE
[V]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
4
0
0
200
1
0
0
10
μ
s
100
100
μ
s
10
1ms
10 ms
t
r
DC
1
Common Emitter
V
CC
= 400V, V
GE
= 15V
*
N
o
t
e
s
: Single Nonrep
e
t
itive
t
d(on)
Pulse T
C
= 25
O
C
0.1
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C
C
u
r
v
e
s
m
ust be derated line
a
r
l
y
with increase in temp
e
r
ature
0.01
10
1
10
1
0
0
1
0
0
0
0
10
20
30
40
50
Gate Resistance, R
G
[
Ω
]
Collector-Emitter Voltage, V
CE
[V]
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5500
Common Emitter
V
CC
= 400V, V
GE
= 15V
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
1000
T
C
= 125
o
C
t
r
t
d(off)
100
100
t
f
t
d(on)
10
10
20
40
60
80
0
10
20
30
40
50
Collector Current, I
C
[A]
Gate Resistance, R
G
[
Ω
]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
10
600
Common Emitter
V
CC
= 400V, V
GE
= 15V
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
I
C
= 40A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
E
on
100
t
f
1
E
off
0.3
10
20
0
10
20
30
40
50
40
60
80
Collector Current, I
C
[A]
Gate Resistance, R
G
[
Ω
]
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching
SOA Characteristics
200
20
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
10
100
E
on
1
10
E
off
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
1
0.1
20
30
40
50
60
70
80
1
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Collector Current, I
C
[A]
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
6
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20.
Reverse Current
200
100
80
T
J
= 125
o
C
T
J
= 125
o
C
10
10
T
J
= 75
o
C
T
J
= 25
o
C
1
0.1
T
J
= 75
o
C
1
T
J
= 25
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 75
o
C
0.01
0.1
150
300
450
600
50
0
1
2
3
4
Forward Voltage, V
F
[V]
Reverse Voltage, V
R
[V]
Figure 21.
Stored Charge
Figure 22. Reverse Recovery Time
200
90
200A/
μ
s
150
200A/
μ
s
100
50
0
di/dt = 100A/
μ
s
60
di/dt = 100A/
μ
s
30
10
20
30
40
5
5
10
20
30
40
Forward Current, I
F
[A]
Forward Current, I
F
[A]
Figure 23. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
single pulse
t
2
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
7
Mechanical Dimensions
Figure 24.
TO-247 3L – TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
8
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intended to be an exhaustive list of all such trademarks.
®
AccuPower™
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®*
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SM
GreenBridge™
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tm
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™
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max
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PowerXS™
®
TinyLogic
Programmable Active Droop™
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®
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QS™
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Marking Small Speakers Sound Louder
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®
DEUXPEED
and Better™
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™
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®
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Saving our world, 1mW/W/kW at a time™
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SerDes™
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. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I74
©2015 Fairchild Semiconductor Corporation
FGH40N65UFD_F085 Rev 1.0
9
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coverage may be accessed at
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