onsemi-FGH40T120SMD-F155
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FGH40T120SMD / FGH40T120SMD
–
F155
1200 V, 40 A FS Trench IGBT
Features
General Description
•
•
•
•
•
•
FS Trench
T
e
chnology, Positive
T
e
mperature Coefficient
High Speed Switching
Using innovative field stop trench IGBT technology,
ON
Semiconductor
’s new series of field stop trench IGB
T
s
o
ffer
the optimum performance for hard switching application such
as solar inverter, UPS, welder and PFC applications.
Low Saturation Voltage: V
CE(sat)
=1.8 V @ I
C
= 40 A
100% of the Parts tested for I
LM
(1)
High Input Impedance
RoHS Compliant
Applications
•
Solar Inverter, Welder, UPS & PFC applications.
C
E
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
T =
25°C unless otherwise noted
C
Symbol
Description
Ratings
1200
±25
Unit
V
CES
Collector to Emitter Voltage
V
V
V
A
A
A
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
V
GES
±30
@ T
C
= 25
o
C
@ T
C
= 100
o
C
80
I
C
Collector Current
40
@ T
C
= 25
o
C
I
LM
(1)
Clamped Inductive Load Current
Pulsed Collector Current
160
I
CM
(2)
160
80
A
A
A
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Diode Continuous Forward Current
Diode Continuous Forward Current
I
F
40
I
FM
P
D
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
240
555
A
@ T
C
= 25
o
C
@ T
C
= 100
o
C
W
W
o
C
o
C
277
T
J
-55 to +175
-55 to +175
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
o
C
T
L
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.27
0.89
40
Unit
o
C
/
W
o
C
/
W
o
C
/
W
R
JC
(IGBT)
R
JC
(Diode)
R
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
—
—
—
Notes:
1. Vcc = 600 V,V
= 15 V, I
= 160 A, R
= 10
Ω
,
Inductive Load
GE
C
G
2. Limited by Tjmax
Publication Order Number:
FGH40T120SMD/D
©2013
Semiconductor Components Industries, LLC.
August-2017,
Rev.
3
Package Marking and Ordering Information
Device Marking
FGH40T120SMD
FGH40T120SMD
Device
Package
TO-247 A03
TO-247G03
Reel Size
Tape Width
Quantity
FGH40T120SMD
FGH40T120SMD
–
F155
–
–
–
–
30
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
I
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0 V, I
C
= 250 uA
1200
–
–
–
–
V
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
–
–
250
±400
uA
nA
I
GES
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 40 mA, V
CE
= V
GE
4.9
–
6.2
1.8
7.5
2.4
V
V
I
C
= 40 A
,
V
GE
= 15 V
C
= 25
o
C
T
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 40 A
,
V
GE
= 15 V,
C
= 175
o
C
–
2.0
–
V
T
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
4300
180
–
–
–
pF
pF
pF
V
CE
= 30 V V
GE
= 0 V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
100
Switching Characcteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
40
47
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
Turn-Off Delay Time
Fall Time
475
10
ns
V
R
CC
= 600 V, I
C
= 40 A,
G
= 10
, V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
ns
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
2.7
1.1
3.8
40
mJ
mJ
mJ
ns
55
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
520
50
ns
V
CC
= 600 V, I
C
= 40 A,
R
G
= 10
, V
GE
= 15 V,
ns
Inductive Load, T
C
= 175
o
C
E
on
E
off
E
ts
Q
g
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
3.4
2.5
5.9
370
23
mJ
mJ
mJ
nC
nC
nC
V
CE
= 600 V, I
C
= 40 A,
Q
ge
Q
gc
V
GE
= 15 V
210
2
Electrical Characteristics of the DIODE
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
F
= 40 A
,
T
C
= 25
o
C
–
3.8
4.8
V
V
FM
Diode Forward Voltage
I
F
= 40 A
,
T
C
= 175
o
C
–
–
–
–
–
–
–
2.7
65
–
–
–
–
–
–
–
V
ns
A
t
rr
Diode Reverse Recovery Time
V
R
= 600 V, I
F
= 40 A,
di
F
/dt = 200 A/us,
T
C
= 25
o
C
I
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
7.2
Q
rr
t
rr
234
200
18.0
1800
nC
ns
A
V
R
= 600 V, I
F
= 40 A,
di
F
/dt =
200 A/us,
T
C
= 175
o
C
I
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Q
rr
nC
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
300
T
C
= 175
o
C
T
C
= 25
o
C
20V
17V
20V
15V
17V
250
200
150
100
50
250
200
150
100
50
15V
12V
12V
V
GE
=10V
V
GE
=10V
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
160
4
3
2
1
Common Emitter
V
GE
= 15V
Common Emitter
V
GE
= 15V
T
C
T
C
= 175
o
C —
=
25
o
C
120
80
40
0
80A
40A
I
C
=20A
0
1
2
3
4
5
25
50
75
100
125
150
175
Case Temperature T
C
[
o
C
]
Collector-Emitter Voltage, V
CE
[V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
Common Emitter
T
C
= 25
o
C
T
C
= 175
o
C
16
16
80A
80A
12
12
40A
40A
8
8
I
C
=20A
I
C
=20A
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
4
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Load Current vs. Frequency
200
6000
V
CC
= 600V
Common Emitter
V
GE
= 0V , f = 1MHz
load Current : peak of square wave
T
C
= 25
o
C
5000
4000
3000
2000
1000
Ciss
160
120
T
C
= 100
o
C
80
Coss
Crss
Duty cycle : 50%
T
C
= 100
o
C
40
Powe Dissipation = 277 W
0
1k
10k
100k
1M
1
10
Collector-Emitter Voltage, V
CE
[V]
Switching Frequency, f [Hz]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
1000
t
r
t
d(off)
100
100
t
d(on)
t
f
Common Emitter
10
V
CC
= 600V, V
GE
= 15V
10
I
C
= 40A
Common Emitter
V
CC
= 600V, V
GE
= 15V, I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 25
o
C
,
T
C
= 175
o
C
1
1
0
10
20
30
40
50 60
70
0
10
20
30
40
50
Gate Resistance, R
G
[
]
Gate Resistance, R
G
[
]
Figure 11. Swithcing Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
t
r
10
E
on
100
E
off
t
d(on)
1
Common Emitter
V
CC
= 600V, V
GE
= 15V
Common Emitter
V
GE
= 15V, R
G
= 10
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 25
o
C
T
C
= 175
o
C
10
0.1
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
Collector Current, I
C
[A]
Gate Resistance, R
G
[
]
5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Swithcing Loss vs.
Collector Current
30
1000
t
d(off)
10
E
on
100
E
off
1
t
f
Common Emitter
V
GE
= 15V, R
G
= 10
10
T
C
= 25
o
C
T
C
= 175
o
C
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25
o
C
,
T
C
= 175
o
C
0.1
1
10
20
30
40
50
60
70
80
20
40
60
80
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 15. Gate Charge Characteristics
Figure 16. SOA Characteristics
15
IcMAX (Pulsed)
100
10
s
12
200V
400V
IcMAX (Continuous)
100
s
V
CC
= 600V
1ms
10 ms
10
1
9
6
3
0
DC Operation
Single Nonrepetitive
Pulse Tc = 25
o
C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
Common Emitter
T
C
= 25
o
C
0.1
1
10
100
1000
0
50 100
150 200 250 300 350 400
Gate Charge, Q
g
[nC]
Collector-Emitter Voltage, V
CE
[V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
10
di
F
/dt = 200 A/
s
100
8
6
di
F
/dt = 100 A/
s
10
4
T
C
= 25
o
C
T
C
= 175
o
C —
V
R
= 600 V, I
F
= 40 A
T
C
= 25
o
C
2
1
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
Forward Voltage, V
F
[V]
Foward Current, I
F
[A]
6
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
400
100
V
R
= 600 V, I
F
= 40 A
T
C
= 25
o
C
90
300
di
F
/dt = 200 A/
s
80
200
100
0
di
F
/dt = 100 A/
s
di
F
/dt
=
1
00 A/
s
70
di
F
/dt
=
2
00 A/
s
60
V
R
= 600 V, I
F
= 40 A
T
C
= 25
o
C
50
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
Forwad Current, I
F
[A]
Forward Current, I
F
[A]
Figure 21. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.3
0.1
P
DM
0.01
0.05
t
1
t
2
0.02
0.01
Duty Factor, D = t1/t2
single pulse
1E-5
Peak T
j
= Pdm x Zthjc + T
C
1E-3
1E-6
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
7
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