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March 2014
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
General Description
•
•
•
•
High Speed Switching
Using Fairchild’s proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
Low Saturation Voltage: V
CE(sat)
= 2.5 V @ I
C
= 60 A
High Input Impedance
Built-in Fast Recovery Diode
Applications
•
UPS, Welder
C
G
TO-264 3L
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
1000
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
25
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
60
I
C
Collector Current
42
200
15
A
A
A
I
CM (1)
I
F
Pulsed Collector Current
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
180
72
W
W
o
C
o
C
P
D
T
J
-55 to +150
-55 to +150
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
o
C
T
L
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
JC
(IGBT)
R
JC
(Diode)
R
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.69
Unit
o
C
/
W
o
C
/
W
o
C
/
W
2.08
25
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
1
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing
Method Reel
Size Tape
Width Quantity
FGL60N100BNTD FGL60N100BNTD
TO-264
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
I
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0 V, I
C
= 1 mA
1000
–
–
–
–
1
V
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
–
–
mA
nA
I
GES
±500
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 60 mA, V
CE
= V
GE
I
C
=10 A
,
V
GE
= 15 V
I
C
= 60 A
,
V
GE
= 15 V,
4.0
–
5.0
1.5
7.0
1.8
V
V
V
CE(sat)
Collector to Emitter Saturation Voltage
–
2.5
2.9
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
6000
260
–
–
–
pF
pF
pF
V
CE
= 10 V V
GE
= 0 V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
200
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–
–
–
–
–
–
–
140
320
630
130
275
45
–
–
–
–
–
–
–
ns
ns
V
R
CC
= 600 V, I
C
= 60 A,
G
= 51
, V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
Rise Time
Turn-Off Delay Time
Fall Time
ns
ns
Q
g
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
nC
nC
nC
V
V
CE
= 600 V, I
C
= 60 A,
GE
= 15 V, T
C
= 25
o
C
Q
ge
Q
gc
95
Electrical Characteristics of the Diode
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
–
–
–
–
1.2
1.7
2.1
1.5
2.0
V
V
FM
Diode Forward Voltage
I
F
= 15 A
I
F
= 60 A
1.8
V
1.2
us
uA
t
rr
I
R
Diode Reverse Recovery Time
Instantaneous
I
F
= 60 A, di/dt = 20 A/us
V
RRM
= 1000 V
0.05
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage Characteristics
100
90
20V
15V
10V
9V
Common Emitter
T
C
= 25
℃
Common Emitter
V
GE
= 15V
8V
80
T
C
= 25
℃
━
━
T
C
= 25
℃
80
60
40
20
0
T
C
= 125
℃
——
70
60
50
40
30
20
10
0
T
C
= 125
℃
7V
V
GE
= 6V
0
1
2
3
4
5
0
1
2
3
4
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
10
Common Emitter
V
GE
=15V
Common Emitter
T
C
= – 40
O
C
3
2
1
8
6
4
2
0
80A
60A
30A
30A
60A
80A
I
C
=10A
I
C
=10A
-50
0
50
100
150
4
8
12
16
20
Case Temperature, T
C
[
℃
]
Gate-Emitter Voltage, V
GE
[V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
10
8
10
Common Emitter
T
C
= 25
℃
Common Emitter
T
C
= 125
℃
8
6
4
2
0
30A
60A
80A
6
30A
60A
4
80A
2
I
C
= 10A
I
C
= 10A
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
3
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Switching Loss vs. Gate Resistance
10000
V
CC
=600V, I
C
=60A
V
GE
=? 5V
10000
Cies
T
C
=25
o
C
Tdoff
Tr
1000
1000
Tdon
Tf
Coes
100
10
100
Cres
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
0
5
10
15
20
25
30
0
50
100
150
200
Collector-Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[? ]
Figure 9. Switching Characteristics vs.
Collector Current
Figure 10. Gate Charge Characteristics
1000
20
Common Emitter
V
CC
=600V, R
L
=10
Ω
T
C
=25
℃
V
CC
=600V, Rg=51
Ω
V
GE
=± 15V,
T
C
=25
℃
15
Tdoff
10
5
Tf
Tr
100
Tdon
0
0
50
100
150
200
250
300
10
20
30
40
50
60
Gate Charge, Q
g
[nC]
Collector Current, I
C
[A]
Figure 11. SOA Characteristics
Figure 12. Forward Characteristics
100
I
C
MAX. (Pulsed)
100
I
C
MAX. (Continuous)
50us
T
C
= 100
℃
100us
10
10
1ms
T
C
= 25
℃
DC Operation
1
1
Single Nonrepetitive Pulse
T
C
= 25
℃
Curve must be darated
linearly with increase
in temperature
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Forward Voltage, V
FM
[V]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
4
Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics
Figure 14. Reverse Recovery Characteristics
vs. di/dt
vs. Forward Current
1.19
1.02
0.85
0.68
0.51
0.34
0.17
0.00
119
102
85
68
51
34
17
0
d
i
/dt=-20A/us
T
C
=
25?
I
F
=60A
1.2
1.0
0.8
0.6
0.4
12
10
8
T
C
=25?
t
rr
t
rr
I
rr
6
I
rr
4
0
40
80
120
di/dt [A/us]
160
200
240
10
20
30
40
50
60
Forward Current, I
F
[A]
Figure 15. Reverse
Current vs. Reverse Voltage
Figure 16. Junction Capacitance
1000
100
10
250
200
150
100
50
T
C
= 25
℃
T
C
= 150
℃
1
0.1
T
C
= 25
℃
0.01
1E-3
0
0
300
600
900
0.1
1
10
100
Reverse Voltage, V
R
[V]
Reverse Voltage, V
R
[V]
Figure 17.Transient Thermal Impedance of IGBT
1 0
1
0 .
5
0 .
2
0 .
1
0 .
1
0 .
0 5
0 .
0 2
P
DM
0 .
0 1
t
1
t
2
0 .
0 1
s i
n g l
e p
u l
s e
1 E –
3
– 4
– 3
– 2
– 1
0
1
1 0
1 0
1 0
1 0
1 0
1 0
R
e c t
a n g u l
a r
P
u l
s e
D u r
a t
i o
n [
s e c ]
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
5
Mechanical Dimensions
Figure 18.
TO-264 3L – 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
6
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2000 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. C2
7
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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