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March 2015
FGP20N60UFD
600 V, 20 A Field Stop IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Using novel field stop IGBT technology, Fairchild’s field stop
IGB
T
s
o
ffer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
Low Saturation Voltage: V
CE(sat)
= 1.8 V @ I
C
= 20 A
High Input Impedance
Fast Switching
RoHS Compliant
Applications
•
Solar Inverter, UPS, Welder, PFC
C
G
TO-220
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
CES
Collector to Emitter Voltage
600
20
30
40
20
60
V
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
V
GES
V
@ T
C
= 25
o
C
@ T
C
= 100
o
C
A
A
A
I
C
I
CM (1)
P
D
Collector Current
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
165
66
W
W
o
C
o
C
T
J
-55 to +150
-55 to +150
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
o
C
T
L
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.76
Unit
o
C
/
W
o
C
/
W
o
C
/
W
–
–
–
2.51
62.5
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGP20N60UFD
FGP20N60UFDTU
TO-220
–
–
50ea
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250
μ
A
600
–
–
V
Δ
BV
CES
/ Δ
T
J
T
e
mperature Coefficient of Breakdown
Voltage
V
GE
= 0 V, I
C
= 250
μ
A
–
–
0.6
–
–
V/
o
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0 V,
250
μ
A
T
C
= 25
o
C
V
T
CE
= V
CES
, V
GE
= 0 V,
–
–
–
–
1
mA
nA
C
= 125
o
C
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
±400
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250
μ
A, V
CE
= V
GE
I
C
= 20 A
,
V
GE
= 15 V
I
C
= 20 A
,
V
GE
= 15 V,
4.0
–
5.0
1.8
6.5
2.4
V
V
V
CE(sat)
Collector to Emitter Saturation Voltage
–
2.0
–
V
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
940
110
40
–
–
–
pF
pF
pF
V
CE
= 30 V V
GE
= 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
13
17
–
–
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
87
–
ns
V
CC
= 400 V, I
C
= 20 A,
R
G
= 10
Ω
, V
GE
= 15 V,
32
64
–
ns
Inductive Load, T
C
= 25
o
C
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
0.38
0.26
0.64
13
mJ
mJ
mJ
ns
–
–
–
16
–
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
92
–
ns
V
CC
= 400 V, I
C
= 20 A,
G
= 10
Ω
, V
GE
= 15 V,
Inductive Load, T
C
= 125
o
C
R
63
–
ns
E
on
E
off
E
ts
Q
g
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
0.41
0.36
0.77
63
–
mJ
mJ
mJ
nC
nC
nC
–
–
–
V
V
CE
= 400 V, I
C
= 20 A,
GE
= 15 V
Q
ge
Q
gc
7
–
32
–
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
2
Electrical Characteristics of the Diode
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.9
1.7
35
Max Unit
T
C
= 25
o
C
C
= 125
o
C
–
–
–
–
–
–
2.5
V
FM
Diode Forward Voltage
I
F
= 10 A
V
T
–
T
C
= 25
o
C
T
C
= 125
o
C
–
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
57
–
I
F
= 10 A,
T
C
= 25
o
C
T
C
= 125
o
C
41
–
dI
F
/dt = 200 A/
μ
s
Q
rr
nC
96
–
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
60
60
T
C
= 25
o
C
20V
T
C
= 125
o
C
20V
12V
12V
15V
10V
15V
10V
40
40
20
20
V
GE
= 8V
V
GE
= 8V
0
0.0
0
0.0
1.5
3.0
4.5
6.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
V
CE
= 20V
T
C
= 25
o
C
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 125
o
C
40
40
20
0
20
0
0
1
2
3
4
4
6
8
10
12
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage,V
GE
[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.2
2.8
2.4
2.0
1.6
1.2
0.8
20
Common Emitter
V
GE
= 15V
Common Emitter
T
C
= -40
o
C
16
12
8
40A
20A
40A
I
C
= 10A
4
20A
I
C
= 10A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, T
C
[
o
C]
Gate-Emitter Voltage, V
GE
[V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
T
C
= 25
o
C
Common Emitter
T
C
= 125
o
C
16
12
8
16
12
8
40A
20A
4
40A
4
20A
I
C
= 10A
4
I
C
= 10A
0
0
0
4
8
12
16
20
0
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
2500
15
Common Emitter
V
GE
= 0V, f = 1MHz
Common Emitter
T
C
= 25
o
C
T
C
= 25
o
C
2000
12
300V
200V
C
ies
1500
V
CC
= 100V
9
6
3
0
1000
C
oes
C
res
500
0
0.1
1
10
30
0
20
40
Gate Charge, Q
g
[nC]
60
80
Collector-Emitter Voltage, V
CE
[V]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10
μ
s
100
μ
s
10
1ms
10 ms
t
r
1
DC
Common Emitter
V
CC
= 400V, V
GE
= 15V
t
d(on)
Single Nonrepetitive
0.1
o
Pulse T
= 25
C
C
Curves must be derated
linearly with increase
in temperature
10
5
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
0.01
0
10
20
30
40
50
60
1
10
100
1000
Gate Resistance, R
G
[
Ω
]
Collector-Emitter Voltage, V
CE
[V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 14. Turn-on Characteristics vs.
Collector Current
Gate Resistance
1000
200
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
Common Emitter
V
CC
= 400V, V
GE
= 15V
100
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
r
100
t
d(on)
10
3
t
f
10
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistance, R
G
[
Ω
]
Collector Current, I
C
[A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
3
300
Common Emitter
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
V
CC
= 400V, V
GE
= 15V
I
C
= 20A
T
C
= 25
o
C
1
T
C
= 125
o
C
T
C
= 125
o
C
t
d(off)
100
E
on
E
off
t
f
10
0.1
0
10
20
30
40
0
10
20
30
40
50
60
Gate Resistance, R
G
[
Ω
]
Collector Current, I
C
[A]
Figure17. Switching Loss vs.
Collector Current
Figure18. Turn off Switching
SOA Characteristics
10
100
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
1
E
on
10
E
off
0.1
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
0.02
1
0
10
20
30
40
1
10
100
1000
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
6
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
100
40
T
J
= 125
o
C
T
C
= 125
o
C
10
1
T
J
= 75
o
C
10
T
J
= 25
o
C
T
C
= 75
o
C
0.1
1
T
C
= 25
o
C
T
C
= 75
o
C
T
C
= 25
o
C
0.01
1E-3
T
C
= 125
o
C
0.1
0
100
200
300
400
500
600
0
1
2
3
4
Reverse Voltage, V
R
[V]
Forward Voltage, V
F
[V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
0.05
60
50
40
30
20
10
200A/
μ
s
0.04
di/dt = 100A/
μ
s
0.03
0.02
0.01
di/dt = 100A/
μ
s
200A/
μ
s
0
5
10
15
20
0
5
10
15
20
Forward Current, I
F
[A]
Forward Current, I
F
[A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
single pulse
t
1
t
2
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. 1.4
7
SUPPLIER “B” PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER “A” PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE “D”
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
“A1”
8.65
7.59
1.00
0.55
SEE NOTE “F”
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE “I”
BOTTOM VIEW
NOTES:
A) REFERENCE
JEDEC, TO-220, VARIATION AB
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [
].
D) LOCATION
OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES
NOT COMPLY JEDEC STANDARD VALUE.
F) “A1” DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 – 0.61
DUAL GAUGE
= 1.10 – 1.45
G) DRAWING
FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER
DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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