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September 2013
FGPF15N60UNDF
600 V, 15 A
Short Circuit Rated IGBT
Features
General Description
•
•
•
•
•
Short Circuit Rated 10us
High Current Capability
High Input Impedance
Fast Switching
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGB
T
s
o
ffer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
RoHS Compliant
Applications
•
Sewing Machine, CNC, Home Appliances, Motor Control
C
G
G C E
TO-220F
(Retractable)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
600
20
V
V
A
A
A
@ T
C
= 25
o
C
@ T
C
= 100
o
C
30
I
C
I
CM (1)
I
F
Collector Current
15
45
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Pulsed Collector Current
Diode Forward Current
15
7.5
A
A
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
42
W
W
o
C
o
C
P
D
17
T
J
-55 to +150
-55 to +150
T
stg
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
Unit
o
C
/
W
o
C
/
W
o
C
/
W
–
–
–
3.0
4.9
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
62.5
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGPF15N60UNDF
FGPF15N60UNDF
TO-220F
–
–
50ea
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
I
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0 V, I
C
= 250
μ
A
600
–
–
–
–
1
V
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
–
–
mA
μ
A
I
GES
±10
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 15 mA, V
CE
= V
GE
I
C
= 15 A
,
V
GE
= 15 V
I
C
= 15 A
,
V
GE
= 15
V
,
5.5
–
6.8
2.2
8.5
2.7
V
V
V
CE(sat)
Collector to Emitter Saturation Voltage
–
2.7
–
V
T
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
619
80
–
–
–
pF
pF
pF
V
CE
= 30 V V
GE
= 0 V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
24
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
–
–
–
9.3
9.8
–
ns
ns
Rise Time
–
Turn-Off Delay Time
Fall Time
54.8
9.9
–
ns
V
CC
= 400
V
,
I
C
= 15 A,
R
G
= 10
Ω
, V
GE
= 15
V
,
12.8
ns
Inductive Load, T
C
= 25
o
C
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
0.37
0.067
0.44
8.9
–
–
–
–
–
–
–
–
–
–
mJ
mJ
mJ
ns
9.9
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
56.6
13.2
0.54
0.11
0.65
ns
V
CC
= 400
V
,
I
C
= 15 A,
G
= 10
Ω
, V
GE
= 15
V
,
Inductive Load, T
C
= 125
o
C
R
ns
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
mJ
mJ
mJ
V
CC
= 350
V
,
G
= 100
Ω
, V
GE
= 15
V
,
C
= 150
o
C
T
sc
Short Circuit Withstand Time
R
T
10
–
–
μ
s
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
2
Electrical Characteristics of the IGBT
T =
25°C unless otherwise noted
C
Q
g
T
o
tal Gate Charge
–
–
–
43
6
–
–
–
nC
nC
nC
V
V
CE
= 400 V, I
C
= 15 A,
GE
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
26
Electrical Characteristics of the Diode
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max Unit
T
C
= 25
o
C
–
–
–
–
–
–
1.6
1.5
2.2
V
FM
Diode Forward Voltage
I
F
= 15 A
V
T
C
= 1
25
o
C
C
= 25
o
C
T
C
= 1
25
o
C
C
= 25
o
C
T
C
= 1
25
o
C
–
T
82.4
142
213
541
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
–
I
F
=15 A, dI
F
/dt = 200 A/
μ
s
T
–
Q
rr
nC
–
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
80
80
T
C
= 25
o
C
T
C
= 125
o
C
17V
20V
17V
15V
20V
70
70
60
50
40
30
20
10
0
15V
60
50
V
GE
=
1
2V
V
GE
= 12V
40
30
20
10
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
80
80
Common Emitter
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
V
CE
= 20V
T
C
= 25
o
C
T
C
= 125
o
C
70
60
50
40
30
20
10
0
70
60
T
C
= 125
o
C
50
40
30
20
10
0
0
3
6
9
12
15
0
1
2
3
4
5
6
Gate-Emitter Voltage,V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
V
GE
= 15V
Common Emitter
T
C
= 25
o
C
30A
16
12
8
15A
15A
30A
4
I
C
= 7.5A
I
C
= 7.5A
8
0
25
50
75
100
125
4
12
16
20
Case Temperature, T
C
[
o
C]
Gate-Emitter Voltage, V
GE
[V]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
3000
20
Common Emitter
T
C
= 25
o
C
C
ies
1000
16
12
8
C
oes
C
res
100
15A
12
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
30A
4
I
C
= 7.5A
8
10
0
1
10
30
4
16
20
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
100
15
200V
10
μ
s
12
9
400V
10
V
CC
= 100V
100
μ
s
1ms
1
10 ms
6
DC
Single Nonrepetitive
0.1
o
Pulse T
= 25
C
C
Curves must be derated
linearly with increase
in temperature
3
Common Emitter
T
C
= 25
o
C
0.01
0
1
10
100
1000
0
5
10 15 20 25 30 35 40 45 50
Gate Charge, Q
g
[nC]
Collector-Emitter Voltage, V
CE
[V]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
50
Common Emitter
V
CC
= 400V, V
GE
= 15V
40
I
C
= 15A
30
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
20
100
t
r
Common Emitter
t
d(on)
V
CC
= 400V, V
GE
= 15V
10
5
I
C
= 15A
T
C
= 25
o
C
T
C
= 125
o
C
t
f
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
5
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
50
300
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
T
C
= 25
o
C
T
C
= 125
o
C
100
t
d(off)
10
t
d(on)
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
t
f
t
r
T
C
= 25
o
C
T
C
= 125
o
C
10
1
5
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collecto
r
C
urrent
3000
1000
E
on
E
on
1000
E
off
E
off
100
100
Common Emitter
V
CC
= 400V, V
GE
= 15V
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
I
C
= 15A
T
C
= 25
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 125
o
C
10
10
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
Gate Resistance, R
G
[
Ω
]
Collector Current, I
C
[A]
Figure 17. Turn off Switching
SOA Characteristics
100
Figure 18. Forward Characteristics
30
10
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= 125
o
C
10
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
1
1
1
10
100
1000
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
Forward Voltage, V
F
[V]
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
6
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
100
0.7
T
C
= 25
o
C
T
C
= 125
o
C
T
J
= 125
o
C
0.6
10
200A/
μ
s
0.5
0.4
0.3
0.2
0.1
0.0
1
T
J
= 75
o
C
di
F
/dt = 100A/
μ
s
200A/
μ
s
0.1
T
J
= 25
o
C
0.01
di
F
/dt = 100A/
μ
s
1E-3
50
200
400
600
0
2
4
6
8
10 12 14 16 18 20
Reverse Voltage, V
R
[V]
Forward Current, I
F
[A]
Figure 21. Reverse Recovery Time
200
T
C
= 25
o
C
di
F
/dt = 100A/
μ
s
T
C
= 125
o
C
150
100
50
200A/
μ
s
di
F
/dt = 100A/
μ
s
200A/
μ
s
0
0
2
4
6
8
10 12 14 16 18 20
Forward Current, I
F
[A]
Figure 22.Transient Thermal Impedance of IGBT
5
0.5
1
0.2
0.1
0.05
0.1
0.
0
2
P
D
M
0.01
t
1
t
2
0.01
single pulse
Duty Factor, D = t1/t2
10
-3
10
-2
10
-1
Rectangular Pulse Duration [sec]
Peak T
j
= Pdm x Zthjc + T
C
0.005
10
-5
10
-4
10
0
10
1
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
7
Mechanical Dimensions
Figure 23.
TO-220F 3L – TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF Rev. C2
8
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
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Marking Small Speakers Sound Louder
and Better™
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MICROCOUPLER™
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®
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Saving our world, 1mW/W/kW at a time™
SignalWise™
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®
TRUECURRENT *
μ
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
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Fairchild
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SuperSOT™-3
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®
®
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®
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
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As used here in:
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support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
9
©2012 Fairchild Semiconductor Corporation
FGPF15N60UNDF
Rev. C2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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