onsemi-FGPF4533
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November 2013
FGPF4533
330 V PDP Trench IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Low Saturation Voltage: V
High Input Impedance
Fast Switching
Using novel trench IGBT technology, Fairchild’s new series of
trench IGB
T
s
o
ffer the optimum performance for consumer
appliances, PDP TV and lighting applications where low con-
duction and switching losses are essential.
= 1.55 V @ IC = 50 A
CE (sat)
RoHS Compliant
Applications
•
PDP T
V
, Consumer Appliances, Lighting
TO-220F
(Retractable)
G C
E
Absolute Maximum Ratings
Symbol
Description
Ratings
330
Unit
V
CES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
V
GES
30
@ T
C
= 25
o
C
200
I
C pulse(1)*
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
@ T
C
= 25
o
C
@ T
C
= 100
o
C
28.4
W
W
o
C
o
C
P
D
11.4
T
J
-55 to +150
-55 to +150
T
stg
Maximum Lead
T
e
mp. for soldering
Purposes, 1/8” from case for 5 seconds
o
C
T
L
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
4.4
Unit
o
C
/
W
o
C
/
W
R
JC
(IGBT)
R
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
–
–
62.5
Notes:
(1) Half Sine Wave, D < 0.01,
pluse width < 5
sec
* Ic_pluse limited by max Tj
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing
Method
Reel Size
Tape Width
Quantity
FGPF4533
FGPF4533
TO-220F
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
V
GE
= 0 V, I
C
= 250
A
330
–
–
–
–
V
BV
CES
T
J
T
e
mperature Coefficient of Breakdown
0.3
V/
o
C
V
GE
= 0 V, I
C
= 250
A
Voltage
I
CES
I
GES
Collector Cut-Off Current
G-E Leakage Current
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
–
–
–
–
100
A
±400
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 250
A, V
CE
= V
GE
I
C
= 20 A
,
V
GE
= 15 V
I
C
= 50 A
,
V
GE
= 15 V,
2.4
–
3.3
4.0
–
V
V
1.15
V
CE(sat)
Collector to Emitter
Saturation Voltage
–
–
1.55
1.6
1.8
–
V
V
T
C
= 25
o
C
I
T
C
= 50 A
,
V
GE
= 15 V,
C
= 125
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
–
–
–
1294
57
–
–
–
pF
pF
pF
V
CE
= 30 V V
GE
= 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
41
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
–
–
–
6
22
40
220
6
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
R
CC
= 200 V, I
C
= 20 A
G
= 5
, V
GE
= 15 V
ResistiveLoad,T
C
=25
o
C
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
V
CC
= 200 V, I
C
= 20 A,
G
= 5
, V
GE
= 15 V,
Resistive Load, T
C
= 125
o
C
24
42
277
44
6
R
Turn-Off Delay Time
Fall Time
Q
g
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
CE
= 200 V I
C
= 20 A
V
,
Q
ge
Q
gc
GE
= 15 V
14
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
200
T
C
= 25
o
C
12V
20V
15V
20V
10V
T
C
= 125
o
C
12V
15V
10V
150
150
V
GE
= 8V
V
GE
= 8V
100
100
50
0
50
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
200
200
Common Emitter
V
CE
= 10V
T
C
= 25
o
C
T
C
= 125
o
C
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 125
o
C
150
150
100
100
50
0
50
0
0
2
4
6
8
10
12
0
1
2
3
4
5
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage,V
GE
[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
20
Common Emitter
T
C
= 25
o
C
Common Emitter
V
G
E
= 15V
16
12
8
50A
50A
30A
30A
I
C
= 20A
4
I
C
= 20A
4
0
0
8
12
16
20
0
20
40
60
80 100
120 140
Case Temperature, T
C
[
o
C
]
Gate-Emitter Voltage, V
GE
[V]
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
3
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
2400
Common Emitter
T
C
= 125
o
C
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
2000
16
12
8
1600
C
ies
50A
1200
30A
800
4
C
oes
C
res
400
I
C
= 20A
0
0
0.1
0
4
8
12
16
20
1
10
30
Gate-Emitter Voltage, V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
500
15
Common Emitter
T
C
= 25
o
C
100
10
s
12
100
s
1ms
10 ms
DC
10
1
V
CC
= 100V
9
200V
6
Single Nonrepetitive
o
Pulse T
= 25
C
C
Curves must be derated
linearly with increase
in temperature
0.1
3
0
0.01
0.1
1
10
100
1000
0
15
30
45
Collector-Emitter Voltage, V
CE
[V]
Gate Charge, Q
g
[nC]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
1000
100
t
d(off)
t
r
100
10
Common Emitter
V
CC
= 200V, V
GE
= 15V
t
d(on)
Common Emitter
V
CC
= 200V, V
GE
= 15V
t
f
I
C
= 20A
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
10
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, R
G
[
]
Gate Resistance, R
G
[
]
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
4
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
100
400
t
r
t
d(off)
100
10
t
d(on)
Common Emitter
V
GE
= 15V, R
G
= 5
t
f
Common Emitter
V
GE
= 15V, R
G
= 5
T
C
= 25
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 125
o
C
1
10
10
10
20
30
40
50
20
30
40
50
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
1000
5000
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
1000
T
C
= 25
o
C
T
C
= 125
o
C
E
off
100
E
off
100
E
on
10
Common Emitter
V
GE
= 15V, R
G
= 5
E
on
T
C
= 25
o
C
T
C
= 125
o
C
1
10
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, R
G
[
]
Collector Current, I
C
[A]
Figure 17. Turn off Switching SOA Characteristics
500
100
10
1
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
0.1
1
10
100
500
Collector-Emitter Voltage, V
CE
[V]
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
5
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
8
1
0.5
0.2
0.1
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
Dut
y
F
actor,
D
=
t
1/t2
single pulse
Peak T
= Pdm x Zthjc + T
j
C
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
6
Package Dimensions
Figure 19. TO-220F 3L – TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev.C1
8
