onsemi-FJA4213RTU

Is Now Part of  

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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

January 2009  

2SA1962/FJA4213  

PNP Epitaxial Silicon Transistor  

Applications  

•

•

High-Fidelity Audio Output Amplifier  

General Purpose Power Amplifier  

Features  

•

•

•

•

•

•

•

•

•

High Current Capability: I

C

= -17A  

High Power Dissipation : 130watts  

High Frequency : 30MHz.  

High Voltage : V

CEO

= -250V  

Wide S.O.A for reliable operation.  

Excellent Gain Linearity for low THD.  

Complement to 2SC5242/FJA4313.  

Thermal and electrical Spice models are available.  

Same transistor is also available in:  

— TO264 package, 2SA1943/FJL4215 : 150 watts  

— TO220 package, FJP1943 : 80 watts  

— TO220F package,

 

FJPF1943 : 50

 

watts  

TO-3P  

1.Base 2.Collector 3.Emitter  

1

Absolute Maximum Ratings*  

T =

 

25°C unless otherwise noted  

a

Symbol  

Parameter  

Ratings  

-250  

-250  

-5  

Units  

BV

CBO  

BV

CEO  

BV

EBO  

I

C  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

V

V

V

A

A

-17  

I

B  

Base Current  

-1.5  

P

D  

T

o

tal Device Dissipation(T

C

=25

°

C)  

Derate above 25

°

C  

130  

1.04  

W

W/

°

C  

T

J

, T

STG  

Junction and Storage

T

e

mperature  

– 50 ~ +150  

°

C  

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

Thermal Characteristics*

 

T =25

°

C unless otherwise noted  

a

Symbol  

Parameter  

Max.  

Units  

R

θ

JC  

Thermal Resistance, Junction to Case  

0.96  

°

C/W  

* Device mounted on minimum pad size  

h

Classification  

FE  

Classification  

R

O

h

FE1  

55 ~ 110  

80 ~ 160  

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

1

Electrical Characteristics*

T =25

°

C unless otherwise noted  

a

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cut-off Current  

Test Condition  

I

C

=-5mA, I

E

=0  

Min. Typ. Max. Units  

-250  

-250  

-5  

V

V

I

C

=-10mA, R

BE

=

∞  

I

E

=-5mA, I

C

=0  

V

V

CB

=-230V, I

E

=0  

V

EB

=-5V, I

C

=0  

-5.0  

-5.0  

160  

µ

A  

µ

A  

I

EBO  

Emitter Cut-off Current  

h

FE1  

DC Current Gain  

V

CE

=-5

V

,

I

C

=-1A  

V

CE

=-5

V

,

I

C

=-7A  

I

C

=-8A, I

B

=-0.8A  

V

CE

=-5

V

,

I

C

=-7A  

V

CE

=-5

V

,

I

C

=-1A  

V

CB

=-10V, f=1MHz  

55  

35  

h

FE2  

DC Current Gain  

60  

-0.4  

-1.0  

30  

V

CE

(sat)  

V

BE

(on)  

f

T  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

-3.0  

-1.5  

V

V

Current Gain Bandwidth Product  

Output Capacitance  

MHz  

pF  

C

ob  

360  

* Pulse

T

e

st: Pulse Width=20

µ

s, Duty Cycle

≤

2%  

Ordering Information  

Part Number  

2SA1962RTU  

2SA1962OTU  

FJA4213RTU  

FJA4213OTU  

Marking  

A1962R  

A1962O  

J4213R  

Package  

TO-3P  

Packing Method  

Remarks  

hFE1 R grade  

hFE1 O grade  

hFE1 R grade  

hFE1 O grade  

TUBE  

TUBE  

TUBE  

TUBE  

TO-3P  

TO-3P  

J4213O  

TO-3P  

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

2

Typical Characteristics  

-20  

I

B

= -900mA  

I

B

= -800mA  

I

B

= -1A  

V

C

E

= -5V  

Tj = 125

o

C  

-18  

-16  

-14  

-12  

-10  

-8  

I

B

= -700mA  

Tj = 25

o

C  

100  

10  

1

I

B

= -300mA  

Tj = -25

o

C  

I

B

= -200mA  

I

B

= -100mA  

-6  

-4  

-2  

-0  

-2  

-4  

-6  

-8  

-10  

0.1  

1

10  

I

C

[A], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 1. Static Characteristic  

Figure 2. DC current Gain ( R Grade )  

10000  

1000  

100  

Tj = 125

o

C  

Ic=-10Ib  

Tj = 25

o

C  

V

C

E

= -5V  

100  

10  

1

Tj = -25

o

C  

Tj=25

o

C  

Tj=125

o

C  

Tj=-25

o

C  

10  

0.1  

0.1  

1

10  

1

10  

I

C

[A], COLLECTOR CURRENT  

Ic[A], COLLECTO

R

C

URRENT  

Figure 3. DC current Gain

 

( O Grade )  

Figure 4. Collector-Emitter Saturation Voltage  

14  

10000  

1000  

100  

Ic=-10Ib  

12  

V

CE

= 5V  

10  

8

Tj=-25

o

C  

Tj=25

o

C  

6

4

Tj=125

o

C  

2

0

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1.6  

1.8  

2.0  

2.2  

2.4  

0.1  

1

10  

V

BE

[V], BASE-EMITTER VOLTAGE  

Ic[A], COLLECTO

R

C

URRENT  

Figure 5. Base-Emitter Saturation Voltage  

Figure 6. Base-Emitter On Voltage  

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

3

Typical Characteristics  

-100  

-10  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

I

C

MAX. (Pulsed*)  

I

C

MAX. (DC)  

10ms*  

100ms*  

DC  

-1  

-0.1  

-0.01  

*SINGLE NONREPETITIVE  

PULSE T

C

=25[

o

C]  

1

10  

100  

1E-6  

1E-5  

1E-4  

1E-3  

0.01  

0.1  

1

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Pulse duration [sec]  

Figure 7. Thermal Resistance  

Figure 8. Safe Operating Area  

160  

140  

120  

100  

80  

60  

40  

20  

0

0

25  

50  

75  

100  

125  

150  

175  

T

C

[

o

C], CASE TEMPERATURE  

Figure 9. Power Derating  

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

4

Package Dimensions  

TO-3P  

15.60

0.20  

4.80

0.20  

+0.15  

13.60

0.20  

9.60

0.20  

ø3.20

0.10  

1.50  

–0.05  

2.00

0.20  

3.00

0.20  

1.00

0.20  

1.40

0.20  

+0.15  

0.60  

–0.05  

5.45TYP  

5.45TYP  

[5.45

0.30  

]

[5.45

0.30

]  

Dimensions in Millimeters  

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

5

© 2009 Fairchild Semiconductor Corporation  

2SA1962/FJA4213 Rev. C  

6

ON Semiconductor and  

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  

coverage may be accessed at

. ON Semiconductor reserves the right to make changes without further notice to any products herein.  

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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