onsemi-FJA4313RTU

January 2009  

2SC5242/FJA4313  

NPN Epitaxial Silicon Transistor  

Applications  

•

•

High-Fidelity Audio Output Amplifier  

General Purpose Power Amplifier  

Features  

•

•

•

•

•

•

•

•

•

High Current Capability: I

C

= 17A  

High Power Dissipation : 130watts  

High Frequency : 30MHz.  

TO-3P  

1.Base 2.Collector 3.Emitter  

1

High Voltage : V

CEO

=250V  

Wide S.O.A for reliable operation.  

Excellent Gain Linearity for low THD.  

Complement to 2SA1962/FJA4213.  

Thermal and electrical Spice models are available  

Same transistor is also available in:  

–TO264 package, 2SC5200/FJL4315 : 150 watts  

–TO220 package, FJP5200 : 80 watts  

–TO220F package,

 

FJPF5200 : 50

 

watts  

Absolute Maximum Ratings*  

T =

 

25°C unless otherwise noted  

a

Symbol  

Parameter  

Ratings  

Units  

BV

CBO  

BV

CEO  

BV

EBO  

I

C  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current(DC)  

Base Current  

250  

250  

5

V

V

V

A

A

17  

I

B  

1.5  

P

D  

T

o

tal Device Dissipation(T

C

=25

°

C)  

Derate above 25

°

C  

130  

1.04  

W

W/

°

C  

T

J

, T

STG  

Junction and Storage

T

e

mperature  

– 50 ~ +150  

°

C  

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

Thermal Characteristics*

 

T =25

°

C unless otherwise noted  

a

Symbol  

Parameter  

Max.  

Units  

R

θ

JC  

Thermal Resistance, Junction to Case  

0.96  

°

C/W  

* Device mounted on minimum pad size  

h

Classification  

FE  

Classification  

R

O

h

FE1  

55 ~ 110  

80 ~ 160  

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

1

Electrical Characteristics*

T =25

°

C unless otherwise noted  

a

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cut-off Current  

Test Condition  

I

C

=5mA, I

E

=0  

Min. Typ. Max. Units  

250  

250  

5

V

V

I

C

=10mA, R

BE

=

∞  

I

E

=5mA, I

C

=0  

V

V

CB

=230

V

,

I

E

=0  

V

EB

=5

V

,

I

C

=0  

5.0  

5.0  

µ

A  

µ

A  

I

EBO  

Emitter Cut-off Current  

h

FE1  

DC Current Gain  

V

CE

=5V, I

C

=1A  

V

CE

=5V, I

C

=7A  

I

C

=8A, I

B

=0.8A  

V

CE

=5V, I

C

=7A  

V

CE

=5V, I

C

=1A  

V

CB

=10

V

,

f

=1MHz  

55  

35  

160  

h

FE2  

DC Current Gain  

60  

0.4  

1.0  

30  

V

CE

(sat)  

V

BE

(on)  

f

T  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

3.0  

1.5  

V

V

Current Gain Bandwidth Product  

Output Capacitance  

MHz  

pF  

C

ob  

200  

* Pulse

T

e

st: Pulse Width=20

µ

s, Duty Cycle

≤

2%  

Ordering Information  

Part Number  

2SC5242RTU  

2SC5242OTU  

FJA4313RTU  

FJA4313OTU  

Marking  

C5242R  

C5242O  

J4313R  

Package  

TO-3P  

Packing Method  

Remarks  

hFE1 R grade  

hFE1 O grade  

hFE1 R grade  

hFE1 O grade  

TUBE  

TUBE  

TUBE  

TUBE  

TO-3P  

TO-3P  

J4313O  

TO-3P  

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

2

Typical Characteristics  

16  

14  

12  

10  

8

I

B

=200mA  

I

B

= 180mA  

I

B

= 160mA  

Vce=5V  

Tj=125

o

C  

Tj=25

o

C  

I

B

= 140mA  

I

B

= 120mA  

100  

10  

1

I

B

= 100mA  

I

B

= 80mA  

Tj=-25

o

C  

I

B

= 60mA  

I

B

= 40mA  

6

4

2

I

B

= 0  

0

0

2

4

6

8

10  

12  

14  

16  

18  

20  

1

10  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Ic[A], COLLECTO

R

C

URRENT  

Figure 1. Static Characteristic  

Figure 2. DC current Gain ( R grade )  

10000  

1000  

100  

10  

Ic=10Ib  

Tj=125

o

C  

Tj=25

o

C  

Vce=5V  

100  

10  

1

Tj=-25

o

C  

Tj=25

o

C  

Tj=125

o

C  

Tj=-25

o

C  

1

0.1  

1

10  

1

10  

Ic[A], COLLECTO

R

C

URRENT  

Ic[A], COLLECTO

R

C

URRENT  

Figure 3. DC current Gain ( O grade )  

Figure 4. Collector-Emitter Saturation Voltage  

10000  

12  

10  

8

V

CE

= 5V  

Ic=10Ib  

Tj=25

o

C  

Tj=-25

o

C  

1000  

6

4

Tj=125

o

C  

2

0

0.0  

100  

0.1  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1

10  

Ic[A], COLLECTOR CURRENT  

V

BE

[V], BASE-EMITTER VOLTAGE  

Figure 5. Base-Emitter On Voltage  

Figure 6. Base-Emitter Saturation Voltage  

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

3

Typical Characteristics  

-100  

-10  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

I

C

MAX. (Pulsed*)  

I

C

MAX. (DC)  

10ms*  

100ms*  

DC  

-1  

-0.1  

-0.01  

*SINGLE NONREPETITIVE  

PULSE T

C

=25[

o

C]  

1E-6  

1E-5  

1E-4  

1E-3  

0.01  

0.1  

1

1

10  

100  

Pulse duration [sec]  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 7. Thermal Resistance  

Figure 8. Safe Operating Area  

160  

140  

120  

100  

80  

60  

40  

20  

0

0

25  

50  

75  

100  

125  

150  

175  

T

C

[

o

C], CASE TEMPERATURE  

Figure 9. Power Derating  

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

4

Package Dimensions  

TO-3P  

15.60

0.20  

4.80

0.20  

+0.15  

13.60

0.20  

9.60

0.20  

ø3.20

0.10  

1.50  

–0.05  

2.00

0.20  

3.00

0.20  

1.00

0.20  

1.40

0.20  

+0.15  

0.60  

–0.05  

5.45TYP  

5.45TYP  

[5.45

0.30  

]

[5.45

0.30

]  

Dimensions in Millimeters  

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

5

© 2009 Fairchild Semiconductor Corporation  

2SC5242/FJA4313 Rev. C  

6