onsemi-FJB3307DTM
| Part # | onsemi-FJB3307DTM |
Download  | onsemi-FJB3307DTM |
July 2013
FJB3307D
High-Voltage Fast-Switching NPN Power Transistor
Features
• Built-in
Diode between Collector and Emitter
• Suitable
for Electronic Ballast and Switch-Mode Power Supplies
Internal Schematic Diagram
C
B
D
2
-PAK
1
1.Base 2.Collector
3.Emitter
E
Ordering Information
Part Number
Marking
Package
D
2
-PAK
Packing Method
FJB3307DTM
J3307D
T
a
pe and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
700
400
V
9
V
8
A
(1)
I
CP
16
A
I
B
4
8
A
(1)
I
BP
Base Current (Pulse)
Junction
T
e
mperature
Storage
T
e
mperature
A
T
J
150
°
C
°
C
T
STG
-55 to 150
Note:
1. Pulse test: pulse width = 300
μ
s, duty cycle = 2% pulsed.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
1
Thermal Characteristics
Symbol
Parameter
Value
1.72
80
Units
W
T
A
= 25°C
T
C
= 25°C
P
D
T
o
tal Device Dissipation
W
R
θ
ja
R
θ
jc
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
72.5
1.56
°
C/W
°
C/W
Electrical Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted
.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
Parameter
Conditions
I
C
= 500
μ
A, I
E
= 0
Min. Typ. Max. Units
Collector-Base Breakdown Voltage
700
400
9
V
V
Collector-Emitter Breakdown Voltage
I
C
= 5 mA, I
B
= 0
Emitter-Base Breakdown Voltage
Emitter Cut-Off Current
I
E
= 500
μ
A, I
C
= 0
V
EB
= 9
V
, I
C
= 0
V
1
40
30
1
mA
h
FE1
V
CE
= 5 V, I
C
= 2 A
V
CE
= 5 V, I
C
= 5 A
I
C
= 2 A, I
B
= 0.4 A
8
5
DC Current Gain
h
FE2
V
V
I
I
I
C
= 5 A, I
B
= 1 A
2
V
CE(sat)
Collector-Emitter Saturation Voltage
C
= 5 A, I
B
= 1 A, T
A
= 100°C
C
= 8 A, I
B
= 2 A
3
V
3
V
I
C
= 2 A, I
B
= 0.4 A
1.2
1.6
2.0
2.5
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
I
C
= 5 A, I
B
= 1 A
V
C
= 5 A, I
B
= 1 A, T
A
= 100°C
V
V
F
C
ob
t
STG
t
F
Diode Forward Voltage
Output Capacitance
Storage Time
I
C
= 3 A
V
V
CB
= 10 V, I
E
= 0, f = 1 MHz
60
pF
μ
s
μ
s
3.0
0.7
V
CC
= 125
V
,
I
C
= 5 A,
I
B1
= -I
B2
= 1 A, R
L
= 50
Ω
Fall Time
Storage Time
V
CC
= 30 V, I
C
= 5 A, L=200
μ
H
I
B1
=1 A, R
BB
= 0
Ω,
V
BE(OFF)
= -5 V,
t
STG
t
F
2.3
μ
s
Fall Time
150
ns
V
CLAMP
= 250 V
Note:
2. Pulse test: pw = 300
μ
s, duty cycle = 2%.
h
FE
Classification
Classification
H1
H2
h
FE1
15 ~ 28
26 ~ 39
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
2
Typical Performance Characteristics
5.0
100
10
1
V
CE
= 5V
T
a
= 75
o
C
I
B
=300mA
4.5
T
a
= 125
o
C
I
B
=250mA
4.0
I
B
=200mA
3.5
I
B
=150mA
T
a
= 25
o
C
T
a
= – 25
o
C
3.0
I
B
=100mA
2.5
2.0
I
B
=50mA
1.5
1.0
0.5
0.0
1.2
2.4
3.6
4.8
6.0
7.2
8.4
9.6 10.8
12.0
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10
100
I
C
= 5 I
B
I
C
= 5 I
B
10
1
T
a
= 125
o
C
T
a
= 25
o
C
T
a
= – 25
o
C
1
T
a
= 75
o
C
T
a
= 75
o
C
T
a
= 25
o
C
T
a
= 125
o
C
0.1
T
a
= – 25
o
C
0.1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
1000
5.0
f = 1MHz, I
E
= 0
I
C
= 5 I
B
V
CC
= 125V
T
a
= 25
o
C
4.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
100
10
1
10
100
1
2
3
4
5
6
7
8
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Storage Time (Resistive Load)
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
3
Typical Performance Characteristics
(Continued)
400
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
I
C
= 5 I
B1
= 2.5 I
B2
, V
CC
= 30V,
L = 200
μ
H, V
BE(OFF)
= -5V,
V
CLAMP
= 250V, T
a
= 25
o
C
I
C
= 5 I
B
V
CC
= 125V
350
T
a
= 25
o
C
300
250
200
150
100
50
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 7. Fall Time (Resistive Load)
Figure 8. Storage Time (Inductive Load)
75.0
62.5
50.0
37.5
25.0
12.5
0.0
100
90
80
70
60
50
40
30
20
10
0
I
C
= 5 I
B1
= 2.5 I
B2
, V
CC
= 30V,
L = 200
μ
H, V
BE(OFF)
= -5V,
V
CLAMP
= 250V, T
a
= 25
o
C
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
I
C
[A], COLLECTOR CURRENT
Figure 9. Fall Time (Inductive Load)
Figure 10. Power Derating
12
11
6
5
4
3
2
1
0
V
CC
= 50V, L
C
= 1mH
V
BE
(off) = -5V, I
B2
= -1.5V
Ic = 4 Ib
Vcc = 50V
V
BE
(off) = -5V
L
C
= 1mH
10
9
8
7
6
5
4
3
2
1
0
Ic = 5 Ib
Ic = 4 Ib
Ic = 3.3 Ib
Ic = 2.2 Ib
200
300
400
500
600
700
800
0
2
4
6
8
10
12
14
16
18
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
CE
[A], COLLECTOR CURRENT
Figure 11. Reverse Bias Safe Operating Area
Figure 12. RBSOA Saturation
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
4
Typical Performance Characteristics
(Continued)
100
I
C
(MAX), Pulse
10
μ
s
10
100
μ
s
1ms
I
C
(MAX), DC
1
0.1
T
C
= 25
o
C
Single Pulse
0.01
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 13. Forward Biased Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
5
Physical Dimensions
D
2
-PAK
Figure 14. 2-LEAD, JEDEC TO263, VARIATION AB, SURFACE MOUNT (Active)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2008 Fairchild Semiconductor Corporation
Rev. 1.1.0
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
2Cool
¥
FPS
¥
®
AccuPower
¥
F-PFS
¥
®*
AX-CAP
®
*
BitSiC
¥
Build it Now
¥
CorePLUS
¥
CorePOWER
¥
CROSSVOLT
¥
CTL
¥
FRFET
®
PowerTrench
®
PowerXS™
Programmable Active Droop
¥
QFET
®
Global Power Resource
SM
GreenBridge
¥
Green FPS
¥
Green FPS
¥
e-Series
¥
G
max
¥
TinyBoost
¥
TinyBuck
¥
TinyCalc
¥
TinyLogic
®
TINYOPTO
¥
TinyPower
¥
TinyPWM
¥
TinyWire
¥
TranSiC
¥
QS
¥
Quiet Series
¥
RapidConfigure
¥
¥
GTO
¥
IntelliMAX
¥
Current Transfer Logic
¥
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficientMax
¥
ISOPLANAR
¥
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWise
¥
SmartMax
¥
TriFault Detect
¥
TRUECURRENT
®
*
P
SerDes
¥
MegaBuck
¥
SMART START
¥
Solutions for Your Success
¥
SPM
®
ESBC
¥
MICROCOUPLER
¥
MicroFET
¥
®
MicroPak
¥
Fairchild
®
STEALTH
¥
UHC
®
Ultra FRFET
¥
UniFET
¥
VCX
¥
VisualMax
¥
VoltagePlus
¥
XS™
MicroPak2
¥
Fairchild Semiconductor
®
FACT Quiet Series
¥
FACT
®
SuperFET
®
MillerDrive
¥
SuperSOT
¥
-3
MotionMax
¥
SuperSOT
¥
-6
mWSaver
¥
FAST
®
SuperSOT
¥
-8
OptoHiT
¥
SupreMOS
®
FastvCore
¥
OPTOLOGIC
®
OPTOPLANAR
®
FETBench
¥
SyncFET
¥
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel
v
e
s and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I64
© Fairchild Semiconductor Corporation
