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June 2014
FJE5304D
NPN Triple Diffused Planar Silicon Transistor
Features
Equivalent Circuit
C
• High-Voltage,
High-Speed Power Switch Applications
• Wide
Safe Operating Area
• Built-in
Free-Wheeling diode
• Suitable
for Electronic Ballast Applications
B
• Small
Variance in Storage Time
TO-126
1
E
1.Emitter 2.Collector 3.Base
Ordering Information
Part Number
FJE5304D
Top Mark
J5304D
Package
TO-126 3L
TO-126 3L
Packing Method
Bulk
Rail
FJE5304DTU
J5304D
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
700
400
V
12
V
4
A
I
CP
Collector Current (Pulse)
(1)
8
A
I
B
Base Current (DC)
2
4
A
I
BP
Base Current (Pulse)
(1)
Storage
T
e
mperature Range
A
T
STG
-65 to 150
°
C
Note:
1. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
© 2004 Fairchild Semiconductor Corporation
FJE5304D Rev. 1.1.0
1
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
P
C
Parameter
Max.
30
Unit
W
Collector Dissipation (T
C
= 25
°
C)
R
θ
JC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.17
83.3
°
C/W
°
C/W
R
θ
JA
Electrical Characteristics
(2)
Values are at T
C
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
Parameter
Conditions
Min.
700
400
12
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
I
C
= 1 mA, I
E
= 0
Collector-Emitter Breakdown Voltage
I
C
= 5 mA, I
B
= 0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
I
E
= 1 mA, I
C
= 0
V
V
CE
= 700 V, V
EB
= 0
V
CE
= 400 V, I
B
= 0
V
EB
= 12 V, I
C
= 0
100
250
100
μ
A
μ
A
μ
A
I
CEO
I
EBO
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 2 A
I
C
= 0.5 A, I
B
= 0.1 A
I
C
= 1 A, I
B
= 0.2 A
I
C
= 2.5 A, I
B
= 0.5 A
I
C
= 0.5 A, I
B
= 0.1 A
I
C
= 1 A, I
B
= 0.2 A
I
C
= 2.5 A, I
B
= 0.5 A
10
8
h
FE
DC Current Gain
40
0.7
1.0
1.5
1.1
1.2
1.3
2.5
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
BE
(sat)
V
f
Collector-Base Saturation Voltage
V
V
Internal Diode Forward Voltage Drop
I
F
= 2 A
Inductive Load Switching (V
CC
= 200 V)
t
stg
t
f
Storage Time
Fall Time
I
C
= 2 A, I
B1
= 0.4 A,
V
BE
(off) = -5 V,
L = 200
μ
H
0.6
0.1
μ
s
μ
s
Resistive Load Switching (V
CC
= 250 V)
t
stg
t
f
Storage Time
Fall Time
I
C
= 2 A,
I
B1
= I
B2
= 0.4 A,
T
P
= 30
μ
s
2.9
μ
s
μ
s
0.2
Note:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
© 2004 Fairchild Semiconductor Corporation
FJE5304D Rev. 1.1.0
2
Typical Performance Characteristics
5
100
10
1
Vce=5V
I
= 500mA
I
B
= 450mA
I
B
= 400mA
I
B
= 350mA
Ta=125
o
C
25
o
C
4
3
2
1
0
I
B
B
= 300mA
I
B
= 250mA
I
B
= 200mA
-25
o
C
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
B
= 0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10
10
I
c
=5I
B
I
c
=5I
B
25
O
Cb
1
Ta=125
O
Cb
1
-25
O
C
25
O
C
Ta=125
O
C
-25
O
Cb
0.1
0.01
0.1
0.01
0.01
0.1
1
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 4. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage
10
1000
V
CC
= 250V
I
C
= 5I
B1
= -5I
B2
t
STG
t
STG
1
100
t
F
0.1
t
F
V
Clamp
= 200V,
V
BE(OFF)
=-5V, R
BB
=0 Ohm,
L=200 uH, I
C
= 5I
B1
0.01
0.1
10
0.1
1
10
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Inductive Load Switching Time
© 2004 Fairchild Semiconductor Corporation
FJE5304D Rev. 1.1.0
3
Typical Performance Characteristics
(Continued)
100
100
10
T
C
=25
o
C
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH
10
1
μ
s
10
μ
s
1ms
1
1
DC
0.1
0.1
0.01
0.01
10
100
1000
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Forward Bias Safe Operating Area
Figure 8. Reverse Bias Safe Operating Area
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 9. Power Derating
© 2004 Fairchild Semiconductor Corporation
FJE5304D Rev. 1.1.0
4
8.30
7.70
3.45
3.05
4.00
3.80
11.20
10.80
14.20 MAX
3.20
1.35
1.95
1.55
1.70
1.50
1.00
E
D
0.85
3X
0.65
#1
0.60
0.45
M
3X
0.254
2.29
TOP VIEW
3°
SIDE VIEW
PRODUCTION
CODE
TERMINAL
LENGTH “D”
TERMINAL
LENGTH “E”
TSSTU
TSTU
NONE
(STD LENGTH)
3.45 – 4.05
2.36 – 2.96
6.45-7.45
5.36-6.36
FRONT VIEW
12.76 – 13.36
15.76-16.76
NOTES:
A. NO
INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL
DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS
ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH “D”, REFER TO TABLE
FOR TERMINAL LENGTH “E”, REFER TO TABLE
E
F. DRAWING
FILENAME: MKT-TO126AArev2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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