onsemi-FJP2160DTU
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January 2016
FJP2160D
ESBC
™
Rated NPN Silicon Transistor
Applications
Description
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBC
™
configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3 amps while providing exceptionally
low on-resistance and very low switching losses.
• High
Voltage and High Speed Power Switch
Application
• Emitter-Switched
Bipolar/MOSFET Cascode
Application (ESBC
™
)
• Smart
Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor
Driver and Ignition Driver
The ESBC
™
switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBC
™
MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBC
™
configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
ESBC Features (FDC655 MOSFET)
V
CS(ON)
I
C
Equiv R
CS(ON)
0.131 V
0.5 A
0.261
Ω
(1)
• Low
Equivalent On Resistance
• Very
Fast Switch: 150 KHz
• Squared
RBSOA: Up to 1600 V
• Avalanche
Rated
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
• Low
Driving Capacitance, no Miller Capacitance
(
Typ. 12 pF Capacitance at 200 V)
• Low
Switching Losses
• Reliable
HV switch: No False Triggering due to
High dv/dt Transients.
C
2
C
FJP2160D
FDC655
B
1
B
TO-220
1
G
3
E
1.Base 2.Collector 3.Emitter
S
Figure 2. Internal Schematic Diagram
Figure 3. ESBC Configuration
(2)
Figure 1. Pin Configuration
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2160DTU
J2160D
TO-220 3L
Tube
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFE
T
s
c
an be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
Absolute Maximum Ratings
(3)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1600
800
V
12
V
2
A
I
CP
Collector Current (Pulse)
Base Current
3
A
I
B
1
A
I
BP
Base Current (Pulse)
2
A
P
D
Power Dissipation
(T
C
= 25
°
C)
100
W
°
C
°
C
mJ
T
J
Operating and Junction
T
e
mperature Range
Storage
T
e
mperature Range
– 55 to +125
– 65 to +150
3.5
T
STG
EAS
Avalanche Energy (T
J
= 25
°
C, 8 mH)
Note:
3. Pulse test: pulse width = 20
μ
s, duty cycle
≤
10%
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
R
θ
jc
Parameter
Max.
1.25
80
Unit
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θ
ja
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
Parameter
Conditions
I
C
= 0.5 mA, I
E
= 0
Min. Typ. Max.
Unit
Collector-Base Breakdown Voltage
1600 1689
800 870
V
V
Collector-Emitter Breakdown Voltage
I
C
= 5 mA, I
B
= 0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
I
E
= 0.5 mA, I
C
= 0
12.0 14.8
0.01
V
V
CE
= 1600
V
, V
BE
= 0
V
CE
= 800 V, I
B
= 0
V
EB
= 12
V
,
I
C
= 0
100
100
500
35
μ
A
μ
A
μ
A
I
CEO
0.01
I
EBO
0.05
V
CE
= 3
V
,
I
C
= 0.4 A
V
CE
= 10 V, I
C
= 5 mA
I
C
= 0.25 A, I
B
= 0.05 A
I
C
= 0.5 A, I
B
= 0.167 A
I
C
= 1 A, I
B
= 0.33 A
I
C
= 500 mA, I
B
= 50 mA
I
C
= 2 A, I
B
= 0.4 A
V
EB
= 10
V
,
I
C
= 0, f = 1 MHz
V
CB
= 200
V
,
I
E
= 0, f = 1 MHz
I
C
= 0.1 A,V
CE
= 10 V
I
F
= 0.4 A
20
20
29
43
h
FE
DC Current Gain
0.16 0.45
0.12 0.35
0.25 0.75
0.74 1.20
0.85 1.20
745 1000
15
V
CE
(sat) Collector-Emitter
Saturation Voltage
V
V
V
BE
(sat) Base-Emitter
Saturation Voltage
C
ib
C
ob
f
T
Input Capacitance
pF
pF
Output Capacitance
Current Gain Bandwidth Product
5
MHz
0.76 1.20
0.83 1.50
V
F
Diode Forward Voltage
V
I
F
= 1 A
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
3
ESBC Configured Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
f
T
It
f
Current Gain Bandwidth Product
I
C
= 0.1 A,V
CE
= 10 V
25
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Inductive Current Fall Time
137
350
120
100
137
35
V
GS
= 10
V
, R
G
= 47
Ω
,
t
s
Inductive Storage Time
V
Clamp
= 500
V
,
Vt
f
Vt
r
t
c
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Inductive Current Fall Time
Inductive Storage Time
t
p
= 3.1
μ
s, I
C
= 0.3 A,
I
B
= 0.03 A, L
C
= 1 mH,
SRF = 480 kHz
It
f
V
GS
= 10
V
, R
G
= 47
Ω
,
t
s
980
30
V
Clamp
= 500
V
,
Vt
f
Vt
r
t
c
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
t
p
= 10
μ
s, I
C
= 1 A,
I
B
= 0.2 A, L
C
= 1 mH,
SRF = 480 kHz
195
210
Maximum Collector Source Volt-
age at Turn-off without Snubber
h
FE
= 5, I
C
= 2 A
V
GS
= ±20 V
V
CSW
1600
V
I
GS(OS)
Gate-Source Leakage Current
Collector-Source On Voltage
Gate Threshold Voltage
1.0
nA
V
GS
= 10
V
,
I
C
= 2 A, I
B
= 0.67 A,
2.210
h
FE
= 3
V
GS
= 10
V
,
I
C
= 1 A, I
B
= 0.33 A,
0.321
0.131
h
FE
= 3
V
CS(ON)
V
V
GS
= 10
V
,
I
C
= 0.5 A, I
B
= 0.17 A,
h
FE
= 3
V
GS
= 10
V
,
I
C
= 0.3 A, I
B
= 0.06 A,
h
FE
= 5
0.166
1.9
V
BS
= V
GS,
I
B
= 250
μ
A
V
GS(th)
C
iss
Q
GS(tot)
V
Input Capacitance
(V
GS
= V
CB
= 0)
V
CS
= 25 V, f = 1 MHz
470
pF
Gate-Source Charge
V
CB
= 0
V
GS
= 10 V, I
C
= 8 A, V
CS
= 25 V
9
nC
V
GS
= 10 V, I
D
= 6.3 A
21
26
30
Static Drain-Source
On Resistance
V
GS
= 4.5
V
,
I
D
= 5.5 A
r
DS(ON)
m
Ω
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C
Note:
4. Used typical FDC655 MOSFET values in table. Values can vary if other Fairchild MOSFE
T
s
a
re used.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
4
Typical Performance Characteristics
3
1A
V
C
E
=
10V
900m A
800m A
100
10
1
700m A
600m A
500m A
T
J
=
125
o
C
T
J
=
25
o
C
2
400m A
300m A
200m A
I
B
=
100m A
1
0
0
1
2
3
4
5
6
7
1
10
100
1000
V
C
E
[V], COLLECTOR EM
I
T
TER VOLTAGE
I
C
[
m
A], COLLECTOR CURRENT
Figure 4. Static Characteristic
Figure 5. DC Current Gain
100
10
100
10
1
I
C
= 3 I
B
I
C
= 5 I
B
T
a
= 125
o
C
T
a
= 125
o
C
1
T
a
= 25
o
C
T
a
= 25
o
C
0.1
0.01
T
a
= -25
o
C
T
a
= – 25
o
C
0.1
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
h
FE
=3
Figure 7. Collector-Emitter Saturation Voltage
h
FE
=5
100
100
I
C
= 20 I
B
I
C
= 10 I
B
10
10
T
a
= 125
o
C
T
a
= 125
o
T
a
= 25
o
C
C
T
a
= 25
o
C
1
1
T
a
= -25
o
C
T
a
= -25
o
C
0.1
1E-3
0.1
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
FE
=10
Figure 9. Collector-Emitter Saturation Voltage
h
FE
=20
h
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
5
Typical Performance Characteristics
(Continued)
2
1
0
1000
100
10
T
J
=
25
o
C
3.0A
2.0A
C
ob
(Emitter Open)
1.0A
0.4A
I
C
=
0.2A
C
ob
(Emitter Grounded)
1
1
10
100
1k
1
10
100
1000
10000
I
B
[mA], BASE CURRENT
COLLECTOR-BASE VOLTAGE[V]
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
250
t
a
= 25
o
C L=1mH SRF=480KHz
t
a
= 25
o
C L=1mH SRF=480KHz
225
hfe=10 common emitter
200
175
150
125
hfe=5 common emitter
hfe=5 common emitter
100
hfe=5 ESBC
hfe=10 common emitter
75
50
hfe=10 ESBC
hfe=5 ESBC
25
hfe=10 ESBC
0
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (t
f
)
Figure 13. Inductive Load
Collector Current Storage time (t
stg
)
300
200
t
a
= 25
o
C L=1mH SRF=480KHz
t
a
= 25
o
C L=1mH SRF=480KHz
280
260
240
220
200
180
160
140
120
100
80
180
160
140
120
100
80
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
hfe=10 common emitter
hfe=10 ESBC
60
40
hfe=5 common emitter
20
hfe=5 ESBC
1.0 1.2
hfe=10 ESBC
1.4 1.6
60
0
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.8
2.0
0.4
0.6
0.8
1.4
1.6
1.8
2.0
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 14. Inductive Load
Figure 15. Inductive Load
Collector Voltage Fall-time (t
f
)
Collector Voltage Rise-time (t
r
)
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
6
Typical Performance Characteristics
(Continued)
300
3
2
1
0
t
a
= 25
o
C L=1mH SRF=480KHz
280
V
DD
= +/-50V, R
LOAD
= 500K
Ω
V
BE
(off
)
=
5
V
260
240
hfe=5 ESBC
220
200
hfe=10 common emitter
180
hfe=5 common emitter
160
140
hfe=10 ESBC
120
100
80
0
200
400
600
800
1000 1200 1400 1600 1800
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 16. Inductive Load
Figure 17. BJT Reverse Bias Safe Operating Area
Collector Current/Voltage Crossover (t
c
)
3
T
C
= 25
o
C
V
DD
= +/-50V, R
LOAD
= 500Kohms
H
FE
= 4
Single 80us Pulse
10
2
1
0
1
0.1
0
500
1000
1500
2000
0
200
400
600
800 1000
1200 1400 1600 1800 2000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover Forward Bias Safe Operating
Area
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
T
C
[
o
C], CASE TEMPERATURE
Figure 20. Power Derating
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
7
Test Circuits
ꢀ
ꢀ
ꢀ
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
A
p
j
p
i
A
p
j
k|{
A
k|{
RG}
ꢀ
ꢀ
ꢀ
ꢀ
Figure 22. Energy Rating Test Circuit
V
CE
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
8
Test Circuits
(Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
9
Functional Test Waveforms
(Continued)
Figure 29. Storage Time – ESBC FET
Gate (off) to Ic Fall-time
Figure 28. Storage Time –
Common Emitter
Base turn off (Ib2) to Ic Fall-time
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
10
Very Wide Input Voltage Range Supply
– 8watt; SecReg: 3 cap input; Quasi Resonant
Y[}gWUZZh
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X
Y
tiyYWXWj{{|
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ZZm
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FJP
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oXXhnX}t
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XYTX[}
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[
XWm
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kl{
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Y
L
[}
ZZm
[W}
Xu[X[_~z
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[^Wr
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QGtGGG
Figure 30. Very Wide Input Voltage Range Supply
Driving ESBC Switches
Fairchild
Proprietary
Figure 32. Vbias Supply Derived
Figure 31. Vcc Derived
Figure 33. Proportional Drive
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
11
SUPPLIER “B” PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER “A” PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE “D”
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
“A1”
8.65
7.59
1.00
0.55
SEE NOTE “F”
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE “I”
BOTTOM VIEW
NOTES:
A) REFERENCE
JEDEC, TO-220, VARIATION AB
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [
].
D) LOCATION
OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES
NOT COMPLY JEDEC STANDARD VALUE.
F) “A1” DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 – 0.61
DUAL GAUGE
= 1.10 – 1.45
G) DRAWING
FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER
DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
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ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive
or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product
reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use
policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be
subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
ANTI-COUNTERFEITING POLICY
under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
