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September 2014  

FJPF13009  

NPN Silicon Transistor  

Description  

Features  

• High-Voltage

 

Capability  

• High

 

Switching Speed  

The FJPF13009 is a 700

V

, 12 A NPN silicon epitaxial  

planar transistor. The FJPF13009 is available with multi-  

ple h

FE

bin classes for ease of design use. The  

FJPF13009 is designed for high speed switching applica-  

tions which utilizes the industry standard TO-220F pack-  

age offering flexibility in design and excellent power  

dissipation.  

Applications  

• Electronic

 

Ballast  

• Switching

 

Regulator  

• Motor

 

Control  

• Switched

 

Mode Power Supply  

TO-220F  

1.Base 2.Collector 3.Emitter  

1

Ordering Information  

Part Number

(1)  

FJPF13009H1TU  

FJPF13009H2TU  

Top Mark  

J13009-1  

J13009-2  

Package  

Packing Method  

TO-220F 3L  

TO-220F 3L  

Rail  

Rail  

Notes:  

1. The affix “-H1, H2” means the h

FE

classification. The suffix “-TU” means the tube packing method.  

© 2003 Fairchild Semiconductor Corporation  

FJPF13009 Rev. 1.2.1  

Absolute Maximum Ratings

(2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current (DC)  

Collector Current (Pulse)  

Base Current  

700  

400  

V

9

V

12  

A

I

CP  

24  

A

I

B  

6

50  

A

P

D  

T

o

tal Device Dissipation (T

C

= 25°C)  

Junction

T

e

mperature  

W

°

C  

°

C  

T

J  

150  

T

STG  

Storage

T

e

mperature Range  

-65 to +150  

Note:  

2. These ratings are based on a maximum junction temperature of 150

°

C. These are steady-state limits. Fairchild  

Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.  

Electrical Characteristics  

Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Conditions  

Min.  

Typ.  

Max  

Unit  

V

V

CEO

(sus) Collector-Emitter

 

Sustaining Voltage

 

I

C

= 10 mA, I

B

= 0  

400  

I

EBO  

h

FE1  

h

FE2  

Emitter Cut-Off Current  

DC Current Gain

(3)  

V

EB

= 9 V, I

C

= 0  

1

mA  

V

CE

= 5

V

, I

C

= 5 A  

V

CE

= 5

V

, I

C

= 8 A  

I

C

= 5 A, I

B

= 1 A  

8

6

40  

30  

1.0  

1.5  

3.0  

1.2  

1.6  

Collector-Emitter Saturation  

Voltage

(3)  

V

I

C

= 8 A, I

B

= 1.6 A  

I

C

= 12 A, I

B

= 3 A  

I

C

= 5 A, I

B

= 1 A  

V

V

V

I

C

= 8 A, I

B

= 1.6 A  

V

CB

= 10

V

, f = 0.1 MHz  

V

CE

= 10

V

, I

C

= 0.5 A  

C

ob  

f

T  

Output Capacitance  

Current Gain Bandwidth Product  

Turn-On Time  

180  

pF  

4

MHz  

t

ON  

t

STG  

t

F  

1.1  

3.0  

0.7  

V

CC

= 125

V

, I

C

= 8 A,  

I

B1

= – I

B2

= 1.6 A,  

R

L

= 15.6

Ω  

Storage Time  

μ

s  

Fall Time  

Note:  

3. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2%  

h

FE

Classification  

Classification  

H1  

H2  

15 ~ 28  

h

FE1  

8 ~ 17  

© 2003 Fairchild Semiconductor Corporation  

FJPF13009 Rev. 1.2.1  

2

Typical Performance Characteristics  

10  

100  

I

C

= 3 I

B  

V

CE

= 5V  

V

BE

(sat)  

1

10  

0.1  

V

CE

(sat)  

0.01  

0.1  

1

0.1  

1

10  

100  

1

10  

100  

I

C

[A], COLLECTOR CURRENT  

I

C

[A], COLLECTOR CURRENT  

Figure 1. DC Current Gain  

Figure 2. Base-Emitter Saturation Voltage and  

Collector-Emitter Saturation Voltage  

10000  

1000  

V

CC

=125V  

I

C

=5I

B  

1000  

100  

10  

1

t

R  

t

D

, V

BE

(off)=5V  

100  

10  

0.1  

1

10  

100  

0.1  

1

10  

100  

1000  

V

CB

[V], COLLECTOR BASE VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 3. Collector Output Capacitance  

Figure 4. Turn-On Time  

100  

10  

10000  

V

CC

=125V  

I

C

=5I

B  

t

STG  

1

1000  

0.1  

0.01  

t

F  

100  

0.1  

1

10  

100  

1000  

1

10  

100  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 5. Turn-Off Time  

Figure 6. Forward Bias Safe Operating Area  

© 2003 Fairchild Semiconductor Corporation  

FJPF13009 Rev. 1.2.1  

3

Typical Performance Characteristics

(Continued)  

100  

70  

60  

50  

40  

30  

20  

10  

0

Vcc=50V,  

I

L = 1mH  

10  

1

0.1  

0.01  

0

25  

50  

75  

100  

125  

150  

175  

10  

100  

1000  

10000  

T

C

[

o

C], CASE TEMPERATURE  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 7. Reverse Bias Safe Operating Area  

Figure 8. Power Derating  

© 2003 Fairchild Semiconductor Corporation  

FJPF13009 Rev. 1.2.1  

4

10.36  

9.96  

2.66  

2.42  

B

A

B

3.28  

3.08  

7.00  

3.40  

3.20  

0.70  

SEE NOTE “F”  

SEE NOTE “F”  

6.88  

6.48  

1 X

4

5°  

16.07  

15.67  

B

16.00  

15.60  

B

(3.23)  

3

1

1.47  

1.24  

2.96  

2.56  

2.14  

0.90  

0.70  

0.50  

10.05  

9.45  

M

A

30°  

0.45  

0.25  

0.60  

0.45  

B

2.54  

2.54  

4.90  

4.50  

B

NOTES:  

A. EXCEPT WHERE NOTED CONFORMS TO  

EIAJ SC91A.  

B

DOES NOT COMPLY EIAJ STD. VALUE.  

C. ALL DIMENSIONS ARE IN MILLIMETERS.  

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  

MOLD FLASH AND TIE BAR PROTRUSIONS.  

E. DIMENSION AND TOLERANCE AS PER ASME  

Y14.5-1994.  

F. OPTION 1 – WITH SUPPORT PIN HOLE.  

OPTION 2 – NO SUPPORT PIN HOLE.  

G. DRAWING FILE NAME: TO220M03REV5  

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

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literature is subject to all applicable copyright laws and is not for resale in any manner.  

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