onsemi-FJV92MTF

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June 2009  

FJV92MTF  

PNP Epitaxial Silicon Transistor  

Features  

• High

 

Voltage Transistor  

SOT-23  

1.Base 2.Emitter 3.Collector  

Absolute Maximum Ratings

 

T

A

= 25

°

C

u

nless otherwise noted  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Value  

-350  

-350  

-5  

Units  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Collector Current  

-500  

350  

mA  

mW  

°C  

P

C  

Collector Power Dissipation  

Storage

T

e

mperature  

T

STG  

R

TH

(j-a)  

150  

Thermal Resistance junction to Ambient  

357  

°

C

/W  

Electrical Characteritics

 

T

A

= 25

°

C

u

nless otherwise noted  

Symbol Parameter

 

Test conditions  

I

C

= -100

µ

A, I

E

= 0  

Min. Max. Units  

BV

CBO

Collector-Base Breakdown Voltage  

BV

CEO

Collector-Emitter Breakdown Voltage*  

BV

EBO

Emitter-Base Breakdown Voltage  

-350  

-350  

-5  

V

V

I

C

= -1mA, I

B

= 0  

I

E

= -100

µ

A, I

C

= 0  

V

CB

= -200

V

,

I

E

= 0  

V

I

CBO  

I

EBO  

h

FE  

Collector Cut-off Current  

Emitter Cut-off Current  

DC Current Gain*  

-0.25  

-0.1  

µ

A  

V

EB

= -5

V

,

I

C

=0  

µ

A  

25  

40  

25  

V

CE

= -10

V

,

I

C

= -1mA  

V

CE

= -10

V

,

I

C

= -10mA  

V

CE

= -10

V

,

I

C

= -30mA  

V

CE

(sat) Collector-Emitter

 

Saturation Voltage*  

V

BE

(sat) Base-Emitter

 

Saturation Voltage*  

I

C

= -20mA, I

B

= -2mA  

I

C

= -20mA, I

B

= -2mA  

V

CB

= -20

V

,

I

E

=0, f=1MHz  

-0.5  

-0.9  

6

V

V

C

ob  

f

T  

Output Capacitance  

pF  

Current Gain Bandwidth Product  

50  

MHz  

V

CE

= -20

V

,

I

C

= -10mA, f=100MHz  

* Pulse

 

Test: PW

≤

300

µ

s, Duty Cycle

≤

2%  

© 2009 Fairchild Semiconductor Corporation  

FJV92MTF Rev. A1  

1

Typical Characteristics  

1000  

100  

10  

-10000  

-1000  

-100  

I

C

= 10 I

B  

V

CE

= -10V  

V

BE

(sat)  

V

CE

(sat)  

1

-10  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-1000  

I

C

[mA], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 1. DC current Gain  

Figure 2. Saturation Voltage  

100  

10  

1

1000  

100  

10  

V

CE

= -20V  

f = 100MHz  

C

ib  

C

ob  

-0.1  

-1  

-10  

-100  

-1  

-10  

-100  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. Capacitance  

Figure 4. Current Gain Bandwidth Product  

© 2009 Fairchild Semiconductor Corporation  

FJV92MTF Rev. A1  

2

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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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