onsemi-FJX3014RTF-ON
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November 2013
FJX3014R
NPN Epitaxial Silicon Transistor with Bias Resistor
Features
Description
• 100
mA Output Current Capability
• Built-in
Bias Resistor (R
1
= 4.7 k
Ω
, R
2
= 47 k
Ω
)
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing compo-
nent count and simplifying circuit design.
Application
• Switching,
Interface, and Driver Circuits
• Inverters
• Digital
Applications in Industrial Segments
Equivalent Circuit
C
3
R1
B
2
R2
1
SOT-323
1. Base
2. Emitter
3. Collector
E
Ordering Information
Part Number
Top Mark
Package
Packing Method
T
a
pe and Reel
FJX3014RTF
S14
SC70 3L (SOT-323)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
V
10
V
100
mA
°
C
°
C
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
T
STG
-55 to +150
© 2002 Fairchild Semiconductor Corporation
FJX3014R Rev. 1.1.2
1
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Value
200
Unit
mW
Power Dissipation
Derate Above T
A
= 25°C
1.60
625
mW/°C
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
Note:
1. PCB size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted
.
Symbol
BV
CBO
BV
CEO
I
CBO
Parameter
Conditions
Min.
50
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
I
C
= 10
μ
A, I
E
= 0
Collector-Emitter Breakdown Voltage
I
C
= 100
μ
A, I
B
= 0
50
V
Collector Cut-Off Current
V
CB
= 40
V
,
I
E
= 0
0.1
0.3
μ
A
h
FE
DC Current Gain
V
CE
= 5 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 10
V
,
I
C
= 5 mA
68
V
CE
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
f
T
250
3.7
MHz
V
CB
= 10
V
,
I
E
= 0,
f = 1.0 MHz
C
ob
Output Capacitance
pF
V
I
(off)
V
I
(on)
R
1
Input-Off Voltage
Input-On Voltage
Input Resistor
V
CE
= 5 V, I
C
= 100
μ
A
0.5
V
V
V
CE
= 0.2
V
,
I
C
= 5 mA
1.3
3.2
4.7
6.2
k
Ω
R
1
/R
2
Resistor Ratio
0.09
0.10
0.11
© 2002 Fairchild Semiconductor Corporation
FJX3014R Rev. 1.1.2
2
Typical Performance Characteristics
1
1000
V
CE
= 5V
I
C
= 20I
B
R
1
= 4.7K
R
2
= 47K
R
1
= 4.7K
R
2
= 47K
100
T
A
= 125
o
C
T
J
= 125
o
C
0.1
10
T
J
= 75
o
C
T
A
= 75
o
C
T
A
= 25
o
C
T
J
= 25
o
C
1
0.01
1E-3
0.1
0.1
0.01
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
1000
V
CE
= 0.2V
V
CE
= 5V
R
1
= 4.7K
R
2
= 47K
R
1
= 4.7K
R
2
= 47K
T
A
= 25
o
C
10
T
A
= 125
o
C
100
T
A
= 25
o
C
1
T
A
= 75
o
C
T
A
= 125
o
C
T
A
= 75
o
C
10
0.0
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
V
I
(off)[V], INPUT OFF VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Input-On Voltage
Figure 4. Input-Off Voltage
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
T
a
[
o
C], AMBIENT TEMPERATURE
Figure 5. Power Derating
© 2002 Fairchild Semiconductor Corporation
FJX3014R Rev. 1.1.2
3
Physical Dimensions
SC-70 3L (SOT-323)
Figure 6. 3-LEAD, SC70, EIAJ SC-70, 1.25 MM, WIDE (ACTIVE)
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warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2002 Fairchild Semiconductor Corporation
FJX3014R Rev. 1.1.2
4
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