onsemi-FJY3014R
| Part # | onsemi-FJY3014R |
Download  | onsemi-FJY3014R |
July
200
7
FJY3014R
tm
NPN Epitaxial Silicon Transistor
Features
•
•
•
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R1=4.7K
Ω
, R2=47K
Ω
)
Complement to FJY4014R
Eq
u
ivalent Circuit
C
C
S14
E
B
E
B
SOT
–
523F
Absolute Maximum Ratings *
T =
25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
50
50
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
I
Collector Current
100
mA
°
C
C
T
STG
T
J
Storage
T
e
mperature Range
Junction
T
e
mperature
-55~150
150
°
C
P
Collector Power Dissipation
, by R
θ
JA
200
mW
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Max
Units
R
θ
JA
Thermal Resistance, Junction to Ambient
600
°
C/W
* Minimum land pad.
Electrical Characteristics*
T =
25°C unless otherwise noted
C
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
Parameter
Test Condition
MIN
Typ MAX
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
I
C
= 10 uA, I
E
= 0
50
50
V
V
I
C
= 100 uA, I
B
= 0
V
CB
= 40
V
,
I
E
= 0
0.1
0.3
uA
h
FE
V
CE
= 5 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 10
V
,
I
C
= 5 mA
V
CB
= 10
V
,
I
E
= 0, f = 1.0 MHz
V
CE
= 5 V, I
C
= 100uA
V
CE
= 0.2
V
,
I
C
= 5mA
68
V
CE(
sat
)
f
T
Collector-Emitter Saturation Voltage
Current Gain – Bandwidth Product
Output
Capacitance
V
MHz
pF
V
250
3.7
C
cb
V
I(
off
)
Input Off Voltage
0.5
V
I(
on)
R
1
Input On Voltage
1.3
6.2
V
Input Resistor
3.2
4.7
0.1
K
Ω
R
1
/R
2
Resistor Ratio
0.09
0.11
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
©2006 Fairchild Semiconductor Corporation
1
FJY3014R Rev.
B
Typical Performance Characteristics
Figure 1. DC current Gain
Figure 2. Input On Voltage
10
1000
V
CE
=0.3V
R
1
= 4.7K
R
2
= 47K
V
CE
= 5V
R
1
= 4.7K
R
2
= 47K
1
100
0.1
0.1
10
1
10
100
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Power Derating
1000
280
240
200
160
120
80
I
C
= 10I
B
R
1
= 4.7K
R
2
= 47K
100
10
1
40
0
0
25
50
75
100
125
150
175
1
10
100
T
a
[
o
C], AMBIENT TEMPERATURE
I
C
[mA], COLLECTOR CURRENT
2
FJY3014R Rev.
B
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A
critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I25
© 2007 Fairchild Semiconductor Corporation
