onsemi-FKN08PN40S
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February 2008
FKN08PN40S
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
3
1
1: T
2: Gate
3: T
1
2
2
TO-92
1 2 3
Absolute Maximum Ratings
T =
25°C unless otherwise noted
a
Symbol
Parameter
Value
Rating
Units
V
DRM
V
RRM
Peak Repetitive Off-State Voltage
RMS On-State Current
Surge On-State Current
I
2
t for Fusing
400
V
Sine Wave 50 to 60Hz, Gate Open
I
T (RMS)
Commercial frequency, sine full wave
360
°
conduction,
T
c
=
70
℃
0.8
8
A
A
I
TSM
I
2
t
Sinewave half
cycle, peak value,
non-repetitive
60Hz
Value corresponding to halfwave,
surge on-state current, tp=8.33ms
0.26
A
2
s
P
GM
P
G (AV)
V
GM
I
GM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
5
W
W
V
0.1
5
Peak Gate Current
1
A
T
J
Junction
T
e
mperature
Storage
T
e
mperature
– 40 ~ 125
– 40 ~ 125
°
C
°
C
T
STG
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
(note1)
Value
45
Units
R
θ
JC
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
(note2)
°
C/W
160
Note1: Infinite cooling condition.
Note2: JESD51-10 (
T
e
st Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
1
Electrical Characteristics
T =
25°C unless otherwise noted
C
Min.
Typ.
Max.
Units
Symbol
Parameter
Test Condition
I
I
Repetieive Peak Off-State Current
V
/V applied
–
–
100
μ
A
DRM
RRM
DRM RRM
V
On-State Voltage
T =25
°
C, I
=1.12A
–
–
1.8
V
TM
C
TM
Instantaneous measurement
I
II
III
I
T2(+), Gate (+)
–
–
–
–
–
–
–
–
–
–
–
–
2.0
2.0
2.0
5
V
V
(Note 2)
Gate Trigger Voltage
V =12V,
R =100
Ω
D L
V
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
–
GT
–
V
–
–
mA
mA
mA
V
(Note 2)
Gate Trigger Current
V =12V,
R =100
Ω
D L
I
II
III
5
GT
–
5
V
Gate Non-Trigger Voltage
T =125
°
C, V
=1/2V
DRM
0.2
–
–
GD
J
D
I
I
Holding Current
Latching Current
(I, II,III)
V
= 12
V
, I
=
2
00mA
15
15
20
–
mA
mA
mA
V/
μ
s
H
D
D
TM
I, III
II
V
= 12
V
, I
=
1
0mA
–
L
G
–
dv/dt(s)
dv/dt(c)
Critical Rate of Rise of
Off-State Voltag
V
= 63% Rated, T
= 125
°
C,
20
DRM
j
Exponential Rise
Critical-Rate of Rise of Off-State
Com-
mutating Voltage (di/dt=-0.7A/uS)
3.0
–
–
V/
μ
s
Commutation dv/dt test
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test Condition
FKN08PN40S
1. Junction
T
e
mperature
T
J
=125
°
C
2. Rate of decay of on-state
Supply Voltage
Time
commutating current
(di/dt)
C
3. Peak off-state voltage
V
D
= 200V
(di/dt)
C
Main Current
Main Voltage
Time
Time
(dv/dt)
C
V
D
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
2
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
(-) I
GATE
(+) I
GT
GATE
Quadrant II
Quadrant I
GT
T1
T1
I
–
+ I
GT
GT
(-) T2
(-) T2
(-) I
GT
GATE
(+) I
GT
GATE
Quadrant III
Quadrant IV
T1
T1
–
T2 Negative
Package Marking and Ordering Information
Device Marking
Device
Package
Packing
Tape Width
Quantity
K08PN40S
FKN08PN40S
TO-92
BULK
—
—
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
3
Typical Performance Characteristics
Figure 1. On-State Characteristics
Figure 2. Power Dissipation
1.2
1.0
0.8
T
J
=125
o
C
T
J
=25
o
C
DC
1
180
o
0.6
0.4
0.2
0.0
120
o
90
o
60
o
30
o
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
IT
RMS
[A], On-State Current
V
TM
[V], On-State Voltage
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
6
30
o
120
60
o
5
90
o
Q3
110
4
120
o
Q2
100
180
o
3
Q1
DC
90
2
1
0
80
70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-40
0
40
80
120
T
J
[
o
C], Junction Temperature
IT
RMS
[A], On-State Current
Figure5. Typical Gate Voltage
Figure6. Typical Latching Currrent
vs Junction Temperature
vs Junction Temperarure
1.0
0.9
0.8
0.7
0.6
0.5
0.4
6
4
Q3
Q3
Q1
2
Q1
Q2
0
-40
0
40
80
120
-40
0
40
80
120
T
J
[
o
C
], Junction Temperature
T
J
[
o
C], Junction Temperature
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
4
Typical Performance Characteristics
(Continued)
Figure7. Typical Holding Current
vs Junction Temperature
Figure8. Junction to Case Thermal Resistance
5
50
40
30
20
10
0
Q3
4
3
Q1
2
Q2
1
0
-40
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
0
40
80
120
T
J
[
o
C], Junction Temperature
Time, [S]
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
5
Package Dimension
TO-92
+0.25
–0.15
4.58
0.46
0.10
+0.10
–0.05
1.27TYP
[1.27
0.20
1.27TYP
[1.27
0.20
0.38
]
]
3.60
0.20
(R2.29)
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
6
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®
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™
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®
SuperSOT™-8
Build it Now™
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™
CTL™
Current Transfer Logic™
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®
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®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
SyncFET™
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®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
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TinyWire™
µSerDes™
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®
QS™
QT Optoelectronics™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
FKN08PN40S Rev. 1.0.0
7
