onsemi-FKN08PN60
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August 2006
FKN08PN60
tm
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
3
1
1: T
2: Gate
3: T
1
2
2
TO-92
1 2 3
Absolute Maximum Ratings
T =
25°C unless otherwise noted
a
Symbol
Parameter
Value
Rating
Units
V
DRM
V
RRM
Peak Repetitive Off-State Voltage
600
V
Sine Wave 50 to 60Hz, Gate Open
I
T (RMS)
RMS On-State Current
Commercial frequency, sine full wave
0.8
A
360
°
conduction,
T
c
=
70
℃
I
TSM
Surge On-State Current
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
60Hz
8
9
A
A
I
2
t
I
2
t for Fusing
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
0.33
A
2
s
P
GM
P
G (AV)
V
GM
I
GM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
5
W
W
V
0.1
5
Peak Gate Current
1
A
T
J
Junction
T
e
mperature
Storage
T
e
mperature
– 40 ~ 125
– 40 ~ 125
°
C
°
C
T
STG
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
(note1)
Value
40
Units
R
θ
JC
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
(note2)
°
C/W
160
Note1: Infinite cooling condition.
Note2: JESD51-10 (
T
e
st Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
©2006 Fairchild Semiconductor Corporation
FKN08PN60 Rev. A
1
Electrical Characteristics
T =
25°C unless otherwise noted
C
Min.
Typ.
Max.
Units
Symbol
Parameter
Test Condition
I
I
Repetieive Peak Off-State Current
V
/V applied
–
–
100
µ
A
DRM
RRM
DRM RRM
V
On-State Voltage
T =25
°
C, I
=1.12A
–
–
1.8
V
TM
C
TM
Instantaneous measurement
I
II
III
I
T2(+), Gate (+)
–
–
–
–
–
–
–
–
–
–
–
–
2.0
2.0
2.0
5
V
V
Gate Trigger Voltage
V =12V,
R =100
Ω
D L
V
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
–
GT
–
V
–
–
mA
mA
mA
V
Gate Trigger Current
V =12V,
R =100
Ω
D L
I
II
III
5
GT
–
5
V
Gate Non-Trigger Voltage
T =125
°
C, V
=1/2V
DRM
0.2
–
–
GD
J
D
I
I
Holding Current
Latching Current
(I, II,III)
V
= 12
V
, I
=
2
00mA
15
15
20
–
mA
mA
mA
V/
µ
s
H
D
D
TM
I, III
II
V
= 12
V
, I
=
1
0mA
–
L
G
–
dv/dt(s)
dv/dt(c)
Critical Rate of Rise of
Off-State Voltag
V
= 63% Rated, T
= 125
°
C,
20
DRM
j
Exponential Rise
Critical-Rate of Rise of Off-State
Com-
mutating Voltage (di/dt=-0.7A/uS)
3.0
–
–
V/
µ
s
Commutation dv/dt test
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test Condition
FKN08PN60
1. Junction
T
e
mperature
T
J
=125
°
C
2. Rate of decay of on-state
Supply Voltage
Time
commutating current
(di/dt)
C
3. Peak off-state voltage
V
D
= 300V
(di/dt)
C
Main Current
Main Voltage
Time
Time
(dv/dt)
C
V
D
2
FKN08PN60 Rev. A
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
(-) I
GATE
(+) I
GT
GATE
Quadrant II
Quadrant I
GT
T1
T1
I
–
+ I
GT
GT
(-) T2
(-) T2
(-) I
GT
GATE
(+) I
GT
GATE
Quadrant III
Quadrant IV
T1
T1
–
T2 Negative
Package Marking and Ordering Information
Device Marking
Device
Package
Packing
Tape Width
Quantity
K08PN60
FKN08PN60
TO-92
Bulk
—
—
3
FKN08PN60 Rev. A
Typical Performance Characteristics
Figure 1. On-State Characteristics
Figure 2. Power Dissipation
1.2
1.0
0.8
DC
T
J
=125
o
C
180
o
C
T
J
=25
o
C
120
o
C
1
0.6
0.4
0.2
0.0
90
o
C
60
o
C
30
o
C
0.8
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
1.0
IT
RMS
[A], On-State Current
V
TM
[V], On-State Voltage
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
6
5
4
3
2
1
0
30
o
C
120
110
60
o
C
90
o
C
Q3
Q2
100
120
o
C
180
o
C
90
DC
Q1
80
70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40
0
40
80
120
T
J
[
o
C], Junction Temperature
IT
RMS
[A], On-State Current
Figure5. Typical Gate Voltage
vs Junction Temperarure
Figure6. Typical Latching Currrent
vs Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
6
4
Q3
Q3
Q1
2
Q1
Q2
0
-40
0
40
80
120
-40
0
40
80
120
T
J
[
o
C], Junction Temperature
T
J
[
o
C], Junction Temperature
4
FKN08PN60 Rev. A
Typical Performance Characteristics
(Continued)
Figure7. Typical Holding Current
vs Junction Temperature
Figure8. Junction to Case Thermal Resistance
5
50
40
30
20
10
0
4
3
Q3
2
Q1
1
Q2
0
-40
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
0
40
80
120
T
J
[
o
C], Junction Temperature
Time, [S]
5
FKN08PN60 Rev. A
Package Dimension
TO-92
+0.25
–0.15
4.58
0.46
0.10
+0.10
–0.05
1.27TYP
[1.27
0.20
1.27TYP
[1.27
0.20
0.38
]
]
3.60
0.20
(R2.29)
6
FKN08PN60 Rev. A
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IMPROVE RELIABILIT
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,
F
UNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
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CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
7
FKN08PN60 Rev. A
