onsemi-FKPF2N80
| Part # | onsemi-FKPF2N80 |
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FKPF2N80
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
2
1
1: T
1
2: T
2
3: Gate
3
TO-220F
1
2 3
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Rating
Units
(Note1 )
V
Repetitive Peak Off-State Voltage
800
V
DRM
Symbol
Parameter
Conditions
Rating
Units
I
RMS On-State Current
Commercial frequency, sine full wave 360
°
2
A
T (RMS)
conduction, T
=115
°
C
C
I
Surge On-State Current
Sinewave 1 full cycle, peak value,
50Hz
60Hz
9
10
0.4
A
A
A s
TSM
2
non-repetitive
2
2
I t
I t
for Fusing
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
di/dt
Critical Rate of Rise of On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
I
= 2x I
, tr
≤
100ns
50
3
0.3
A/
µ
s
W
W
V
G
GT
P
P
V
GM
G (AV)
GM
10
I
Peak Gate Current
1.6
A
GM
T
T
V
Junction
T
e
mperature
Storage
T
e
mperature
Isolation Voltage
– 40 ~ 125
– 40 ~ 125
1500
°
C
°
C
V
J
STG
T
a
=25
°
C, AC 1 minute, T
T G
terminal to
1 2
case
iso
Thermal Characteristic
Symbol
Parameter
T
e
st Condition
Min.
Typ.
Max. Units
(Note 4)
R
Thermal Resistance
Junction to case
–
–
4.5
°
C/W
th(J-A)
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Electrical Characteristics
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Repetieive Peak Off-State Current
On-State Voltage
Test Condition
Min.
Typ.
Max. Units
I
V
applied
DRM
–
–
–
–
20
µ
A
DRM
V
T =25
°
C, I
=3A
Instantaneous measurement
T2(+), Gate (+)
1.6
V
TM
GT
C
TM
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
1.5
1.5
10
10
10
–
V
V
V
mA
mA
mA
V
(Note 2)
Gate Trigger Voltage
Gate Trigger Current
V =12V,
R =20
Ω
D L
V
II
III
I
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
(Note 2)
V =12V,
R =20
Ω
I
II
D
L
GT
III
V
Gate Non-Trigger Voltage
Holding Current
T =125
°
C, V
=1/2V
DRM
0.2
GD
J
V
V
D
I
I
= 12
V
, I
=
1
A
–
–
–
–
10
10
10
–
mA
mA
mA
V/
µ
s
H
D
D
TM
Latching Current
I, III
II
= 12
V
, I
=
1
.2I
–
–
L
G
GT
dv/dt
Critical Rate of Rise of
Off-State Voltag
V
= Rated, T
= 125
°
C,
500
DRM
j
Exponential Rise
(dv/dt)
Critical-Rate of Rise of Off-State
5
–
–
V/
µ
s
C
(Note 3)
Commutating Voltage
Notes:
1. Gate
Open
2. Measurement
using the gate trigger characteristics measurement circuit
3. The
critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The
contact thermal resistance R
in case of greasing is 0.5
°
C/W
TH(c-f)
V
(V)
Commutating voltage and current waveforms
(inductive load)
DRM
Test Condition
FKPF2N80
1. Junction
T
e
mperature
T =125
°
C
J
Supply Voltage
Time
2. Rate of decay of on-state
commutating current
(di/dt)
C
(di/dt) =
– 0.5A/ms
C
Main Current
Main Voltage
Time
Time
3. Peak off-state voltage
V
= 400V
D
(dv/dt)
C
V
D
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
(-) I
GT
GATE
(+) I
GT
Quadrant II
Quadrant I
GATE
T1
T1
I
GT
–
+ I
GT
(-) T2
(-) T2
(-) I
GT
GATE
(+) I
GT
GATE
Quadrant III
Quadrant IV
T1
T1
–
T2 Negative
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Typical Curves
12
10
8
12
11
10
9
60Hz
25
o
C
8
7
50Hz
125
o
C
6
6
5
4
4
3
2
2
1
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
100
ON-STATE VOLTAGE [V]
NUMBER OF CYCLES AT 50Hz AND 60Hz
Figure 1.
Maximum On-state Characteristics
Figure 2.
Rated Surge On-state Current
1000
100
10
100
V
GM
=10V
I
, I
Ⅲ
Ⅱ
P
GM
=3W
10
1
I
Ⅰ
V
GT
=1.5V
P
G(AV)
=0.3W
I
GT
=10mA
I
GM
=1.6A
V
GD
=0.2V
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
1
10
100
1000
JUNCTION TEMPERATURE [
o
C]
GATE CURRENT [mA]
Figure 3.
Gate Characteristics
Figure 4.
Gate Trigger Current vs Tj
1000
100
10
1000
100
10
V
GT
, V
GT
Ⅱ
Ⅲ
V
GT
1
Ⅰ
0.1
0.01
1E-3
0.01
0.1
1
10
100
1000
-60
-40
-20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE [
o
C]
CONDUCTION TIME [sec]
Figure 5.
Gate Trigger Voltage vs Tj
Figure 6.
Transient Thermal Impedance
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Typical Curves
(Continues)
140
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
NO HEAT SINK
120
100
80
60
40
20
0
PRINT BOARD
t=1.6mm
SOLDER LAND : 2mm
Φ
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
RMS ON-STATE CURRENT [A]
RMS ON-STATE CURRENT [A]
Figure 7.
Allowable Ambient Temperature
vs Rms On-state Current
Figure 8.
Maximum On-state Power Dissipation
1000
100
10
10
5
TYPICAL EXAMPLE
10
4
10
3
10
2
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE [
o
C]
JUNCTION TEMPERATURE [
o
C]
Figure 9.
Repetitive Peak Off-state Current
vs Junction Temperature
Figure 10.
Holding Current vs
Junction Temperature
1000
100
10
160
TYPICAL EXAMPLE
140
I
Ⅱ
120
100
80
60
40
20
0
I
Ⅲ
I
Ⅰ
-60
-40
-20
0
20
40
60
80
100
120
140
1
10
100
JUNCTION TEMPERATURE [
o
C]
GATE CURRENT PULSE WIDTH [
µ
s]
Figure 11.
Breakover Voltage vs
Junction Temperature
Figure 12.
Gate Trigger Current vs
Gate Current Pulse Width
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Typical Curves
(Continues)
160
140
120
100
TYPICAL EXAMPLE
Tj=125
℃
Ⅰ
QUADRANT
80
60
40
20
Ⅲ
QUADRANT
10
2
10
1
10
3
10
4
RATE OF RISE OF-STATE VOLTAGE [V/us]
Figure 13.
Breakover Voltage vs
Rate of Rise of Off-state Voltage
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
Package Dimension
TO-220F
2.54
±
0.20
10.16
±
0.20
ø3.18
±
0.10
(7.00)
(0.70)
(1.00×45
°
)
MAX1.47
0.80
±
0.10
(30
°
)
#1
0.35
±
0.10
+0.10
–0.05
0.50
2.76
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
9.40
±
0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B1, April 2004
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O MAKE CHANGES WITHOU
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F
URTHER NOTIC
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T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
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A
SSUM
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A
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L
IABILITY
ARISING OU
T
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F
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H
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PPLICATION OR USE O
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RODUC
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D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
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L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
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F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I10
