onsemi-FKPF3N80TU

Part #onsemi-FKPF3N80TU
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onsemi-FKPF3N80TU
FKPF3N80  
Application Explanation  
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit  
TV sets, stereo, refrigerator, washing machine, bread maker  
Electric blanket, solenoid driver, small motor control  
Photo copier, electric tool  
2
1
1: T

1  

2: T

2  

3: Gate  
3
TO-220F  
1
2 3  
Bi-Directional Triode Thyristor Planar Silicon  
Absolute Maximum Ratings
T =25
°
C unless otherwise noted  
C
Symbol  
Parameter  
Rating  
Units  
(Note1 )  
V
Repetitive Peak Off-State Voltage  
800  
V
DRM  
Symbol  
Parameter  
Conditions  
Rating  
Units  
I
RMS On-State Current  
Commercial frequency, sine full wave 360
°  
3
A
T (RMS)  
conduction, T
 
=110
°
C  
C
I
Surge On-State Current  
Sinewave 1 full cycle, peak value,  
50Hz  
60Hz  
30  
33  
4.5  
A
A
A s  
TSM  
2
non-repetitive  
2
2
I t  
I t
 
for Fusing  
Value corresponding to 1 cycle of halfwave,  
surge on-state current, tp=10ms  
di/dt  
Critical Rate of Rise of On-State Current  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Voltage  
I
= 2x I
 
, tr
≤
100ns  
50  
5
0.5  
A/
µ
s  
W
W
V
G
GT  
P
P
V
GM  
G (AV)  
GM  
10  
I
Peak Gate Current  
2
A
GM  
T
T
V
Junction
T
e
mperature  
Storage
T
e
mperature  
Isolation Voltage  
– 40 ~ 125  
– 40 ~ 125  
1500  
°
C  
°
C  
V
J
STG  
T
a
=25
°
C, AC 1 minute, T
 
T G
 
terminal to  
1 2  
case  
iso  
Thermal Characteristic  
Symbol  
Parameter  
T
e
st Condition  
Min.  
Typ.  
Max. Units  
(Note 4)  
R
Thermal Resistance  
Junction to case  
–
–
4.3  
°
C/W  
th(J-C)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

Electrical Characteristics
T =25
°
C unless otherwise noted  
C
Symbol  
Parameter  
Repetieive Peak Off-State Current  
On-State Voltage  
Test Condition  
Min.  
Typ.  
Max. Units  
I
V
applied  
DRM  
–
–
–
–
20  
µ
A  
DRM  
V
T =25
°
C, I
 
=4.5A  
Instantaneous measurement  
T2(+), Gate (+)  
1.5  
V
TM  
GT  
C
TM  
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5  
1.5  
1.5  
20  
20  
20  
–
V
V
V
mA  
mA  
mA  
V
(Note 2)  
Gate Trigger Voltage  
Gate Trigger Current  
V =12V,
 
R =20
Ω  
D L  
V
II  
III  
I
T2(+), Gate (-)  
T2(-), Gate (-)  
T2(+), Gate (+)  
T2(+), Gate (-)  
T2(-), Gate (-)  
(Note 2)  
V =12V,
 
R =20
Ω  
I
II  
D
L
GT  
III  
V
Gate Non-Trigger Voltage  
Holding Current  
T =125
°
C, V
 
=1/2V  
DRM  
0.2  
GD  
J
V
V
D
I
I
= 12
V
, I
 
=
1
A  
–
–
–
–
30  
30  
50  
–
mA  
mA  
mA  
V/
µ
s  
H
D
D
TM  
Latching Current  
I, III  
II  
= 12
V
, I
 
=
1
.2I  
–
–
L
G
GT  
dv/dt  
Critical Rate of Rise of  
Off-State Voltag  
V
= Rated, T
 
= 125
°
C,  
300  
DRM  
j
Exponential Rise  
(dv/dt)  
Critical-Rate of Rise of Off-State  
10  
–
–
V/
µ
s  
C
(Note 3)  
Commutating Voltage  
Notes:  
1. Gate
 
Open  
2. Measurement
 
using the gate trigger characteristics measurement circuit  
3. The
 
critical-rate of rise of the off-state commutating voltage is shown in the table below  
4. The
 
contact thermal resistance R  
in case of greasing is 0.5
°
C/W  
TH(c-f)  
V
(V)  
Commutating voltage and current waveforms  
(inductive load)  
DRM  
Test Condition  
Supply Voltage  
Time  
FKPF3N80  
1. Junction
T
e
mperature  
T =125
°
C  
J
(di/dt)  
C
2. Rate of decay of on-state  
Main Current  
Main Voltage  
Time  
Time  
commutating current  
(di/dt) =
 
– 1.5A/ms  
C
3. Peak off-state voltage  
V
= 400V  
D
(dv/dt)  
C
V
D
Quadrant Definitions for a Triac  
T2 Positive  
+
(+) T2  
(+) T2  
(-) I

GT  

GATE  
(+) I

GT  

Quadrant II  
Quadrant I  
GATE  
T1  
T1  
I

GT  

–
+ I

GT  

(-) T2  
(-) T2  
(-) I

GT  

GATE  
(+) I

GT  

GATE  
Quadrant III  
Quadrant IV  
T1  
T1  
–
T2 Negative  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

Typical Curves  
50  
40  
30  
20  
10  
0
20  
15  
10  
5
25

o

C  
125

o

C  
60Hz  
50Hz  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
1
10  
100  
NUMBER OF CYCLES AT 50Hz AND 60Hz  
ON-STATE VOLTAGE [V]  
Figure 1.
 
Maximum On-state Characteristics  
Figure 2.
 
Rated Surge On-state Current  
1000  
100  
10  
100  
V

GM

=10V  
P

GM

=5W  
10  
P

G(AV)

=0.5W  
I

GM

=2A  
I

GT

, I

GT  

Ⅰ
Ⅱ
I

GT  

V

GT

=1.5V  
Ⅲ
1
V

GD

=0.2V  
1000  
I

RGT  

I

FGT

, I

RGT  

Ⅰ
Ⅰ
Ⅲ
0.1  
10  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
100  
10000  
JUNCTION TEMPERATURE [

o

C]  
GATE CURRENT [mA]  
Figure 3.
 
Gate Characteristics  
Figure 4.
 
Gate Trigger Current vs Tj  
100  
10  
1000  
JUNCTION TO CASE  
1
100  
0.1  
0.01  
10  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
1E-3  
0.01  
0.1  
1
10  
100  
JUNCTION TEMPERATURE [

o

C]  
TIME [sec]  
Figure 5.
 
Gate Trigger Voltage vs Tj  
Figure 6.
 
Transient Thermal Impedance  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

Typical Curves
(Continues)  
160  
160  
140  
120  
100  
80  
①
②
③
④
⑤
NO HEAT SINK  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
140  
120  
100  
80  
30 × 30 × 2 mm AL HEAT SINK  
50 × 50 × 2 mm AL HEAT SINK  
70 × 70 × 2 mm AL HEAT SINK  
100 × 100 × 2 mm AL HEAT SINK  
⑤
④
60  
360

o  

60  
③
②
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
40  
40  
①
20  
20  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
RMS ON-STATE CURRENT [A]  
RMS ON-STATE CURRENT [A]  
Figure 7.
 
Allowable Ambient Temperature  
vs Rms On-state Current  
Figure 8.
 
Allowable Case Temperature  
vs Rms On-state Current  
8
10

6  

10

5  

10

4  

10

3  

10

2  

360

o  

TYPICAL EXAMPLE  
CONDUCTION  
6
RESISTIVE,  
INDUCTIVE  
LOADS  
4
2
0
2
4
6
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
RMS ON-STATE CURRNT [A]  
JUNCTION TEMPERATURE [  
℃
]  
Figure 9.
 
Maximum On-state Power Dissipation  
Figure 10.
 
Repetitive Peak Off-state Current  
vs Junction Temperature  
1000  
1000  
I

L  

Ⅲ
100  
100  
I

L

, I

L  

Ⅰ
Ⅱ
10  
-60  
10  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
JUNCTION TEMPERATURE [

o

C]  
JUNCTION TEMPERATURE [

o

C]  
Figure 11.
 
Holding Current vs  
Junction Temperature  
Figure 12.
 
Laching Current vs  
Junction Temperature  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

Typical Curves
(Continues)  
1000  
100  
10  
160  
TYPICAL EXAMPLE  
140  
120  
100  
80  
I
Ⅱ
I
Ⅲ
I
Ⅰ
60  
40  
20  
0
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
JUNCTION TEMPERATURE [

o

C]  
GATE CURRENT PULSE WIDTH [
µ
s]  
Figure 13.
 
Breakover Voltage vs.  
Junction Temperature  
Figure 14.
 
Gate Trigger Current vs.  
Gate Current Pulse Width  
160  
TYPICAL  
TYPICAL EXAMPLE  
EXAMPLE  
Tj=125
℃
 
140  
120  
100  
80  
T
=
125

o

C  
I

T

j

=4A  
100  
10  
1
τ
= 500us  
V

D

=200V  
F=3Hz  
Ⅰ
QUADRANT  
Ⅰ
QUADRANT  
60  
40  
Ⅲ
QUADRANT  
10

2  

Ⅲ
QUADRANT  
10  
20  
1
100  
1000  
10000  
10

1  

10

3  

10

4  

RATE OF DECAY OF ON-STATE  
COMMUTATION CURRENT [A/ms]  
RATE OF RISE OF-STATE VOLTAGE [V/us]  
Figure 15.
 
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
Figure 16.
 
Commutation Characteristics  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

Package Dimension  
TO-220F  
2.54
±
0.20  
10.16
±
0.20  
ø3.18
±
0.10  
(7.00)  
(0.70)  
(1.00×45
°
)  
MAX1.47  
0.80
±
0.10  
(30  
°
)
#1  
0.35
±
0.10  
+0.10  
–0.05  
0.50  
2.76
±
0.20  
2.54TYP  
2.54TYP  
[2.54
±
0.20  
]
[2.54
±
0.20
]  
9.40
±
0.20  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
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E

2

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2

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URTHER NOTIC
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NY  
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O IMPROVE RELIABILIT
Y
,
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UNCTION OR DESIGN. FAIRCHILD DOES NO
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SSUM
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PPLICATION OR USE O
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ICENSE UNDER ITS PATEN
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R
IGHTS, NO
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HE RIGHTS OF OTHERS.  
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DEVICES OR SYSTEMS WITHOU
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A
PPROVA
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I10  

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z
z
z
z
Switching mode power supply, light dimmer, electric flasher unit  
TV sets, stereo, refrigerator, washing machine, bread maker  
Electric blanket, solenoid driver, small motor control  
Photo copier, electric tool  
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Product status/pricing/packaging  
Product  
Product status  
Full Production  
Pb-free Status  
Pricing*  
Package type  
TO-220F  
Leads  
Packing method  
FKPF3N80TU  
$0.473  
3
RAIL  
* Fairchild 1,000 piece Budgetary Pricing  
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