onsemi-FMB857B

September 2007  

FMB857B  

PNP Epitaxial Silicon Transistor  

•

•

This device is designed for general purpose amplifier application at collector currents to 300mA.  

Sourced from process 68.  

C2  

E1  

C1  

SSOT-6  

B2  

Mark: .N2  

Dot denotes pin #1  

pin #1  

E2  

B1  

Absolute Maximum Ratings

T

C

=25

°

C unless otherwise noted  

Symbol Parameter  

Value  

Units  

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current (DC)  

50  

V

V

CEO  

V

EBO  

I

C  

45  

V

5

V

500  

mA  

°

C  

T

J

, T

STG  

Operating and Storage Junction

T

e

mperature Range  

-55 ~ 150  

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

NOTES:  

1. These ratings are based on a maximum junction temperature of 150 degrees C.  

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

3. All

 

voltages (V) and currents (A) are negative polarity for PNP transistors.  

Thermal Characteristics

 

T

a

=25

°

C unless otherwise noted  

Symbol  

Parameter  

Max.  

Units  

P

D  

T

o

tal Device Dissipation  

Derate above 25

°

C  

700  

5.6  

mW  

mW/

°

C  

R

θ

JA  

Thermal Resistance, Junction to Ambient  

180  

°

C/W  

*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.  

Electrical Characteristics

T

C

=25

°

C unless otherwise noted  

Symbol  

BV

CBO  

Parameter  

Test Condition  

I

C

= 10

μ

A  

Min. Typ. Max.  

Units  

V

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector-Emitter Cutoff Voltage  

50  

45  

5

BV

CEO  

I

C

= 1mA  

V

BV

EBO  

I

E

= 10

μ

A  

V

BV

CEX  

I

C

= 10

μ

A, V

BE

= 1V  

50  

nA  

V

CB

= 30V, T = 25

°

C  

T =150

°

C  

15  

4000  

I

CBO  

Collector Cut-off Current  

DC Current Gain  

nA  

h

FE  

V

CE

= 5V, I

C

= 2mA  

220  

0.6  

475  

I

C

= 10 mA, I

B

= 0.5 mA  

I

C

= 100 mA, I

B

= 5 mA  

0.3  

0.65  

V

CE

(sat)  

Collector-Emitter Saturation Voltage  

V

V

V

CE

= 5V, I

C

= 2mA  

V

CE

= 5V, I

C

= 10mA  

0.75  

0.82  

V

BE

(on)  

Base-Emitter On Voltage  

NOTES:

All voltages (V) and currents (A) are negative polarity for PNP transistors.  

© 2007 Fairchild Semiconductor Corporation  

FMB857B Rev. 1.0.0  

1

TRADEMARKS  

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and  

is not intended to be an exhaustive list of all such trademarks.  

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®  

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™  

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ISOPLANAR™  

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MICROCOUPLER™  

MicroFET™  

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®  

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Build it Now™  

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™  

CTL™  

Current Transfer Logic™  

EcoSPARK

®  

POWEREDGE

®  

Power-SPM™  

PowerTrench

®  

Programmable Active Droop™  

QFET

®  

The Power Franchise

®  

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TinyBuck™  

TinyLogic

®  

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TinyPower™  

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®  

QS™  

QT Optoelectronics™  

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SPM

®  

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SuperSOT™-6  

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®  

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®  

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®  

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OPTOLOGIC

®  

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®  

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®  

®

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®  

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®  

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SM  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE  

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF  

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE  

PRODUCTS.  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  

As used herein:  

1. Life

 

support devices or systems are devices or systems  

which, (a) are intended for surgical implant into the body, or  

(b) support or sustain life, and (c) whose failure to perform  

when properly used in accordance with instructions for use  

provided in the labeling, can be reasonably expected to result  

in significant injury to the user.  

2.  

A critical component is any component of a life support  

device or system whose failure to perform can be reasonably  

expected to cause the failure of the life support device or  

system, or to affect its safety or effectiveness.  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

This datasheet contains the design specifications for product development.  

Specifications may change in any manner without notice.  

Advance Information  

Formative or In Design  

This datasheet contains preliminary data; supplementary data will be pub-  

lished at a later date. Fairchild Semiconductor reserves the right to make  

changes at any time without notice to improve design.  

Preliminary  

First Production  

Full Production  

Not In Production  

This datasheet contains final specifications. Fairchild Semiconductor reserves  

the right to make changes at any time without notice to improve design.  

No Identification Needed  

Obsolete  

This datasheet contains specifications on a product that has been discontin-  

ued by Fairchild semiconductor. The datasheet is printed for reference infor-  

mation only.  

Rev. I30  

© 2007 Fairchild Semiconductor Corporation  

FMB857B Rev. 1.0.0  

2