onsemi-FMBM5551
| Part # | onsemi-FMBM5551 |
Download  | onsemi-FMBM5551 |
FMBM5551
NPN General-Purpose Amplifier
Features
• This
device has matched dies
• Sourced
from process 16
• See
MMBT5551 for characteristics
C2
C2
E1
C1
B2
E2
B1
E1
C1
B2
E2
B1
pin #1
SuperSOT
TM
-6
Mark: .3S2
Dot denotes pin #1
Figure 1. Device Package
Figure 2. Internal Connection
Ordering Information
Part Number
Top Mark
Package
SSOT 6L
Packing Method
FMBM5551
3S2
T
a
pe and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
160
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction
T
e
mperature
180
V
6
V
600
mA
°
C
°
C
T
J
150
T
STG
Storage
T
e
mperature Range
-55 to 150
© 2005
Semiconductor Components Industries, LLC.
October-2017,
Rev.
2
Publication Order Number:
FMBM5551/D
Thermal Characteristics
(1), (2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Value
0.7
Unit
W
Power Dissipation (T
C
= 25°C)
Derate Above 25
°
C
5.6
mW/
°
C
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
180
Notes:
1. P
D
total, for both transistors. For each transistor, P
D
= 350 mW.
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
160
180
6
Max.
Unit
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 1 mA, I
B
= 0
BV
CBO
Collector-Base Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
V
V
CB
= 120 V, I
E
= 0
50
50
50
nA
μ
A
nA
I
CBO
Collector Cut-Off Current
V
CB
= 120 V, I
E
= 0, T
A
= 100°C
V
EB
= 4
V
,
I
C
= 0
I
EBO
h
FE1
Emitter Cut-Off Current
DC Current Gain
V
CE
= 5 V, I
C
= 1 mA
80
0.9
80
Variation Ratio of h
FE1
Between Die 1 and Die 2
DIVID1
h
FE2
h
FE1
(Die1) / h
FE1
(Die2)
V
CE
= 5 V, I
C
= 10 mA
1.1
250
1.05
DC Current Gain
Variation Ratio of h
FE2
Between Die 1 and Die 2
DIVID2
h
FE3
h
FE2
(Die1) / h
FE2
(Die2)
V
CE
= 5 V, I
C
= 50 mA
FE3
(Die1) / h
FE3
(Die2)
0.95
30
DC Current Gain
Variation Ratio of h
FE3
Between Die 1 and Die 2
DIVID3
h
0.9
1.1
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 10 mA
0.15
0.20
1
V
CE
(sat) Collector-Emitter
Saturation Voltage
V
V
V
BE
(sat) Base-Emitter
Saturation Voltage
V
BE
(on) Base-Emitter
On Voltage
1
1
V
Difference of V
BE
(on)
DEL
V
BE
(on)(Die1) – V
BE
(on)(Die2)
-8
8
mV
Between Die1 and Die 2
C
ob
C
ib
Output Capacitance
Input Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
EB
= 0.5
V
,
I
C
= 0, f = 1 MHz
6
pF
pF
20
V
CE
= 10 V, I
C
= 10 mA,
f = 100 MHz
f
T
Current Gain Bandwidth Product
100
300
MHz
V
CE
= 5 V, I
C
= 200
μ
A,
NF
h
fe
Noise Figure
f = 1 MHz, R
S
= 20 k
Ω
,
B = 200 Hz
8
dB
V
CE
= 10 V, I
C
= 1.0 mA,
f = 10 kHz
Small Signal Current Gain
50
250
2
Typical Performance Characteristics
vs Collector Current
2
5
0
0
.
5
0
.
4
0
.
3
0
.
2
0
.
1
0
125 °C
2
0
0
β
= 10
1
5
0
25 °C
25 °C
1
0
0
– 40 °C
125
°
C
V
C
E
= 5V
50
– 40
°
C
0
F
E
0
.
1
0
.
2
0
.
5
1
2
5
10 20
50
1
0
0
1
10
1
0
0
2
0
0
I
C
– COLLECTOR CU
R
R
E
NT
(mA)
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
l
l
Co
l
l
ec
t
o
r C
u
r
r
e
n
t
1
β
= 10
– 40
°
C
1
0
.
8
0
.
6
0
.
4
0
.
2
0
0
.
8
25 °C
– 40
°
C
125
°
C
25 °C
0
.
6
125
°
C
0
.
4
V
= 5V
CE
0
.
2
0
1
10
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
1
0
0
2
0
0
0
.
1
1
10
1
0
0
2
0
0
I
I
C
– COLLECTOR C
U
R
R
E
N
T
(
m
A
)
Figure 6. Base-Emitter On Voltage
vs. Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Between Emitter-Base
50
260
240
220
200
180
160
V
C
B
=
1
0
0
V
I
= 1.0 mA
C
10
C
B
O
1
25
50
75
1
0
0
°
1
2
5
0.1
1
10
100
1000
T
A
– A
M
B
I
E
N
T
T
EM
P
E
R
A
T
U
R
E (
C
)
RESISTANCE (k
Ω
)
Figure 8. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature
3
Typical Performance Characteristics
(Continued)
l
30
16
12
8
FREG = 20 MHz
V
CE
= 10V
f = 1.0 MHz
25
20
15
C
ib
10
5
4
C
cb
0
0.1
0
1
10
100
1
10
I
C
– COLLECTOR CURRENT
(mA)
50
V
– COLLECTOR VO
L
TAGE (V)
CE
Figure 10. Small Signal Current Gain
vs. Collector Current
Figure 9. Input and Output Capacitance
vs. Reverse Voltage
4
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