onsemi-FMG1G50US60H
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IGBT
FMG1G50US60H
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified
No. E209204
Short Circuit rated 10us @ T
= 100
°
C, V
= 15V
C
GE
High Speed Switching
Low Saturation Voltage : V
High Input Impedance
Package Code : 7PM-GA
= 2.2 V @ I
= 50A
CE(sat)
C
Fast & Soft Anti-Parallel FWD
E1/C2
Application
C1
E2
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
G1
E1
Internal Circuit Diagram
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
FMG1G50US60H
Units
V
V
V
Collector-Emitter Voltage
600
±
20
CES
GES
Gate-Emitter Voltage
V
I
I
I
I
Collector Current
@ T
=
25
°
C
50
A
C
C
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
M a x i m u m P o w e r D i s s i p a t i o n
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Isolation Voltage
100
A
CM (1)
F
@ T
= 100
°
C
50
A
C
100
A
FM
T
@ T
= 100
°
C
10
us
W
SC
C
P
@ T
=
C
25
°
C
250
D
J
T
-40 to +150
-40 to +125
2500
2.0
°
C
°
C
V
T
stg
V
@ AC 1minute
iso
Power
T
e
rminals Screw : M5
Mounting Screw : M5
N.m
N.m
Mounting
T
o
rque
2.0
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
Electrical Characteristics of IGBT
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coeff. of Breakdown
Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
±
100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
= 0V,
I =
50mA
C
5.0
—
6.0
2.2
8.5
2.8
V
V
GE(th)
GE
V
I
= 50A
,
V =
15V
GE
CE(sat)
C
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
3460
480
—
—
—
pF
pF
pF
ies
V
= 30V
V =
0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
140
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
30
—
—
ns
ns
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
60
—
ns
V
R
= 300
V
, I
=
5
0A,
C
d(off)
CC
= 5.9
Ω
, V
= 15V
110
1.1
1.2
2.3
20
200
—
ns
f
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
C
on
—
off
—
ts
t
t
t
t
—
d(on)
r
30
—
ns
Turn-Off Delay Time
Fall Time
70
—
ns
V
= 300
V
, I
=
5
0A,
C
d(off)
f
CC
R
= 5.9
Ω
, V
= 15V
250
1.2
2.4
3.6
—
ns
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
—
mJ
mJ
mJ
C
on
off
ts
—
—
V
= 300
V
, V
=
1
5V
GE
CC
T
Short Circuit Withstand Time
10
—
—
us
sc
@
T =
100
°
C
C
Q
T
o
tal Gate Charge
—
—
—
145
28
210
40
nC
nC
nC
g
V
V
= 300
V
, I
=
5
0A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
ge
gc
65
95
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
Electrical Characteristics of DIODE
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
—
Typ.
1.9
1.8
90
Max.
2.8
—
Units
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 50A
F
V
FM
—
=
—
130
—
t
I
Diode Reverse Recovery Time
ns
A
rr
—
130
5
=
—
6.5
—
Diode Peak Reverse Recovery
Current
I =
50A
F
rr
di / dt = 100 A/us
—
7
=
—
225
455
422
—
Q
Diode Reverse Recovery Charge
nC
rr
= 100
°
C
—
Thermal Characteristics
Symbol
Parameter
Typ.
—
Max.
0.5
1.0
—
Units
R
R
R
Junction-to-Case (IGBT
Part, per 1/2 Module)
Junction-to-Case (DIODE
Part, per 1/2 Module)
°
C
/
W
°
C
/
W
°
C
/
W
g
θ
JC
θ
JC
θ
CS
—
Case-to-Sink
(Conductive grease applied)
0.05
—
Weight
Weight of Module
190
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
140
120
100
80
15V
20V
Common Emitter
T
C
= 25
℃
140
120
100
80
Common Emitter
V
GE
= 15V
T
C
= 25
℃
━
━
T
C
= 125
℃
——
12V
60
60
V
GE
= 10V
40
40
20
20
0
0
0
2
4
6
8
1
10
Collector – Emitter Voltage, V
CE
[V]
Collector – Emitter Voltage, V
CE
[V]
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Saturation Voltage Characteristics
5
60
V
CC
= 300V
Common Emitter
Load Current : peak of square wave
V
GE
= 15V
50
4
3
2
1
0
100A
40
30
20
50A
I
C
= 30A
10
Duty cycle : 50%
℃
T
C
= 100
Power Dissipation = 70W
0
1
10
100
1000
-50
0
50
100
150
℃
Case Temperature, T
C
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
℃
T
C
= 125
℃
T
C
= 25
16
12
8
100A
100A
4
4
50A
50A
I
C
= 30A
I
C
= 30A
8
0
0
0
4
12
16
20
0
4
8
12
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
7000
6000
5000
4000
3000
2000
1000
0
1000
100
10
Common Emitter
V
GE
= 0V, f = 1MHz
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
℃
T
C
= 25
I
C
= 50A
T
C
= 25
0
C
T
C
= 125
0
C
Ton
Tr
Cies
Coes
Cres
1
10
Collector – Emitter Voltage, V
CE
[V]
1
10
Gate Resistance, R
G
[
Ω
]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
Common Emitter
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 50A
C
= 25
0
C
C
= 125
0
C
I
C
= 50A
C
= 25
0
C
C
= 125
0
C
10000
T
T
T
T
1000
Toff
Tf
Eoff
Eon
Eoff
100
1000
1
10
1
10
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
g
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
V
CC
= 300V, V
GE
= +/- 15V
G
= 5.9
Ω
T
C
= 25
0
C
C
= 125
0
C
R
G
= 5.9
Ω
R
1000
T
C
= 25
0
C
T
C
= 125
0
C
T
Toff
Ton
Tr
100
Tf
Toff
Tf
100
10
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
15
12
9
Common Emitter
CC
= 300V, V
GE
= +/- 15V
G
= 5.9
Ω
T
C
= 25
0
C
C
= 125
0
C
Common Emitter
V
R
L
= 5.9
Ω
R
℃
T
C
= 25
300 V
200 V
V
CC
= 100 V
10000
1000
100
T
Eoff
Eon
Eoff
6
3
0
0
40
80
120
160
10
20
30
40
50
60
70
80
90
100
Collector Current, I
C
[A]
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
300
300
100
I
C
MAX. (Pulsed)
100
50us
I
C
MAX. (Continuous)
100us
㎳
1
10
1
DC Operation
10
Single Nonrepetitive
℃
Pulse T
C
= 25
Curves must be derated
linerarly with increase
in temperature
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
100
Collector-Emitter Voltage,
V
CE
[V]
0.1
1
0.3
1
10
100
1000
1
10
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
300
100
1
0.1
10
0.01
1
Single Nonrepetitive
≤
℃
125
T
C
= 25
IGBT
℃
:
Pulse T
J
V
GE
15V
=
DIODE :
R
G
= 5.9
Ω
1E-3
0.1
0
100
200
300
400
500
600
700
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Collector-Emitter Voltage,
V
CE
[V]
Fig 18. Transient Thermal Impedance
Fig 17. RBSOA Characteristics
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
20
10
160
120
80
Common Cathode
V
GE
= 0V
℃
℃
T
C
T
C
= 125
= 25
T
rr
I
rr
5
40
Common Cathode
㎲
di/dt = 100A/
℃
℃
T
C
= 25
T
C
= 100
2
0
0
10
20
30
40
50
0
1
2
3
4
Forward Current, I
F
[A]
Forward Voltage,
V
F
[V]
Fig 20. Reverse Recovery Characteristics
Fig 19. Forward Characteristics
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
Package Dimension
7PM-GA
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
â
â
SILENT SWITCHER
SMAR
T
S
TART
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
UHC
UltraFET
VCX
FAST
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
â
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
Power247
I
2
C
â
EcoSPARK
PowerTrench
E
2
CMOS
TM
ISOPLANAR
LittleFET
MicroFET
MicroPak
QFET
QS
QT Optoelectronics
Quiet Series
EnSigna
TM
TinyLogic
TruTranslation
FACT
FACT Quiet Series
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGNꢀ FAIRCHILD
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ H5
