onsemi-FMG2G75US60
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September 2001
IGBT
FMG2G75US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified
No. E209204
Short Circuit rated 10us @ T
= 100
°
C, V
= 15V
C
GE
High Speed Switching
Low Saturation Voltage : V
High Input Impedance
Package Code : 7PM-GA
= 2.2 V @ I
= 75A
CE(sat)
C
Fast & Soft Anti-Parallel FWD
E1/C2
Application
C1
E2
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
G1 E1
G2 E2
Internal Circuit Diagram
Absolute Maximum Ratings
T =
25
°
C unless otherwise noted
C
Symbol
Description
FMG2G75US60
Units
V
V
V
Collector-Emitter Voltage
600
±
20
CES
GES
Gate-Emitter Voltage
V
I
I
I
I
Collector Curent
@ T
=
25
°
C
75
A
C
C
Pulsed Collector Current
Diode Continuous Forwar
d
C
urrent
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Isolation Voltage
150
A
CM (1)
F
@ T
= 100
°
C
75
A
C
150
A
FM
T
@ T
= 100
°
C
10
us
W
SC
C
P
@ T
=
C
25
°
C
310
D
J
T
-40 to +150
-40 to +125
2500
2.0
°
C
°
C
V
T
stg
V
@ AC 1minute
iso
Power
T
e
rminals Screw : M5
Mounting Screw : M5
N.m
N.m
Mounting
T
o
rque
2.0
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
Electrical Characteristics of IGBT
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
T
e
mperature Coeff. of Breakdown
Voltage
V
V
= 0
V
, I
=
2
50uA
600
—
—
—
—
V
CES
GE
C
∆
B
/
VCES
J
= 0
V
, I
=
1
mA
0.6
V/
°
C
GE
C
∆
T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
uA
nA
CES
GES
CE
CES
GE
, V
= 0V
±
100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
= 0
V
, I
=
7
5mA
5.0
—
6.0
2.2
8.5
2.8
V
V
GE(th)
GE
C
V
I
= 75A
,
V =
15V
GE
CE(sat)
C
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
7056
672
—
—
—
pF
pF
pF
ies
V
= 30V
V =
0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
180
Switching Characteristics
t
t
t
t
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
40
—
—
ns
ns
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
70
—
ns
V
R
= 300
V
, I
=
7
5A,
C
d(off)
CC
= 3.3
Ω
, V
= 15V
110
1.4
1.7
3.1
20
200
—
ns
f
G
GE
Inductive Load, T
= 25
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
C
on
—
off
—
ts
t
t
t
t
—
d(on)
r
50
—
ns
Turn-Off Delay Time
Fall Time
80
—
ns
V
= 300
V
, I
=
7
5A,
C
d(off)
f
CC
R
= 3.3
Ω
, V
= 15V
250
1.6
3.0
4.6
—
ns
G
GE
Inductive Load, T
= 125
°
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
—
mJ
mJ
mJ
C
on
off
ts
—
—
V
= 300
V
, V
=
1
5V
GE
CC
T
Short Circuit Withstand Time
10
—
—
us
sc
@
T =
100
°
C
C
Q
T
o
tal Gate Charge
—
—
—
310
62
350
—
nC
nC
nC
g
V
V
= 300
V
, I
=
7
5A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
ge
gc
130
—
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
Electrical Characteristics of DIODE
T
= 25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
—
Typ.
1.9
1.8
90
Max.
2.8
—
Units
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 75A
F
V
FM
—
=
—
130
—
t
I
Diode Reverse Recovery Time
ns
A
rr
—
130
7
=
—
9
Diode Peak Reverse Recovery
Current
I =
75A
F
rr
di / dt = 150 A/us
—
10
—
=
—
315
650
590
—
Q
Diode Reverse Recovery Charge
nC
rr
= 100
°
C
—
Thermal Characteristics
Symbol
Parameter
Typ.
—
Max.
0.4
0.9
—
Units
R
R
R
Junction-to-Case (IGBT
Part, per 1/2 Module)
Junction-to-Case (DIODE
Part, per 1/2 Module)
°
C
/
W
°
C
/
W
°
C
/
W
g
θ
JC
θ
JC
θ
CS
—
Case-to-Sink
(Conductive grease applied)
0.05
—
Weight
Weight of Module
190
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
200
180
160
140
120
100
80
200
160
120
80
Common Emitter
Common Emitter
V
GE
= 15V
20V
15V
℃
T
C
= 25
12V
℃
℃
T
C
= 25
T
C
= 125
Vge = 10V
60
40
40
20
0
0
0
2
4
6
8
0.3
1
10
20
Collector – Emitter Voltage, V
CE
[V]
Collector – Emitter Voltage, V
CE
[V]
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Saturation Voltage Characteristics
5
100
V
CC
= 300V
Load Current : peak of square wave
Common Emitter
V
GE
= 15V
4
3
2
80
150A
75A
60
40
I
C
= 40A
1
0
20
Duty cycle : 50%
℃
Tc = 100
Power Dissipation = 100W
0
0
30
60
90
120
150
0.1
1
10
100
1000
℃
Case Temperature, Tc [
]
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
℃
T
C
= 125
T
C
= 25
16
12
8
150A
150A
75A
4
4
75A
Ic = 40A
Ic = 40A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate – Emitter Voltage, V
GE
[V]
Gate – Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
1000
100
10
16000
14000
12000
10000
8000
6000
4000
2000
0
Common Emitter
V
GE
= 0V, f = 1MHz
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
℃
T
C
= 25
T
C
= 25
0
C
Ton
Tr
T
C
= 125
0
C
Cies
Coes
Cres
1
10
1
10
Collector – Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 8. Turn-On Characteristics vs.
Fig 7. Capacitance Characteristics
Common Emitter
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
C
= 25
0
C
C
= 125
0
C
I
C
= 75A
C
= 25
0
C
C
= 125
0
C
10000
T
T
T
T
1000
Eon
Toff
Tf
Eoff
100
1000
1
10
1
10
Gate Resistance, R
g
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
V
CC
= 300V, V
GE
= +/- 15V
G
= 3.3
Ω
T
C
= 25
0
C
C
= 125
0
C
R
G
= 3.3
Ω
T
C
= 25
0
C
C
= 125
0
C
R
1000
T
T
Ton
100
Toff
Tf
Tr
Toff
Tf
100
10
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
15
12
9
Common Emitter
R
L
= 4
Ω
T
C
= 25
℃
Common Emitter
CC
= 300V, V
GE
= +/- 15V
G
= 3.3
Ω
T
C
= 25
0
C
V
R
300 V
10000
1000
100
T
C
= 125
0
C
Eoff
Eon
200 V
Eoff
Eon
V
CC
= 100 V
6
3
0
0
50
100
150
200
250
300
350
20
40
60
80
100
120
140
Collector Current, I
C
[A]
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
500
I
C
MAX. (Pulsed)
100 I
C
MAX. (Continuous)
50us
100
100us
㎳
1
10
1
DC Operation
10
Single Nonrepetitive
℃
Pulse T
C
= 25
Curves must be derated
linerarly with increase
in temperature
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
100
Collector-Emitter Voltage,
V
CE
[V]
0.1
1
0.3
1
10
100
1000
1
10
1000
Collector-Emitter Voltage,
V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
500
100
1
0.1
10
0.01
1
Single Nonrepetitive
℃
:
≤
℃
125
T
C
= 25
IGBT
Pulse T
J
V
GE
15V
=
R
G
= 3.3
Ω
DIODE :
0.1
1E-3
0
100
200
300
400
500
600
700
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage,
V
CE
[V]
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
200
160
120
80
20
10
Common Cathode
V
GE
= 0V
℃
℃
T
C
= 25
T
C
= 125
T
rr
I
rr
5
Common Cathode
40
㎲
di/dt = 150A/
℃
℃
T
C
T
C
= 100
= 25
2
0
0
1
2
3
4
0
10
20
30
40
50
60
70
80
Forward Current, I
F
[A]
Forward Voltage,
V
F
[V]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
Package Dimension
7PM-GA
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FMG2G75US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FAST
®
FASTr™
FRFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT
™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
FACT™
FACT Quiet Series™
UHC™
UltraFET
®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
