onsemi-FMS6G10US60
| Part # | onsemi-FMS6G10US60 |
Download  | onsemi-FMS6G10US60 |
August 2005
FMS6G10US60
Compact & Complex Module
Features
Description
•
•
•
•
•
•
•
Short Circuit Rated 10
µ
s @ T
= 100
°
C, V
= 15V
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
C
GE
High Speed Switching
Low Saturation Voltage : V
(sat) = 2.1 V @
I =
10A
CE
C
High Input Impedance
Built-in 3
Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
Applications
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
4
5
19
17
21
20
22
23
24
18
13
16
14
15
8
7
10
9
3
6
NTC
11
12
Package Code : 25PM-AA
Internal Circuit Diagram
©2005 Fairchild Semiconductor Corporation
FMS6G10US60 Rev. B1
1
Absolute Maximum Ratings
T
= 25
°
C unless otherwise noted
C
Symbol
CES
Description
Collector-Emitter Voltage
FMS6G10US60
Units
V
Inverter
V
V
600
± 20
10
Gate-Emitter Voltage
V
GES
I
I
I
I
Collector Current
@ T
=
C
80
°
C
A
C
Pulsed Collector Current
20
A
CM (1)
F
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
Energy pulse @ 1Cycle at 60Hz
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
@ T
= 80
°
C
10
A
C
20
A
FM
P
@ T
=
25
°
C
66
W
µ
s
V
D
C
T
@ T
= 100
°
C
10
SC
C
Converter
Common
V
1600
10
RRM
I
I
A
O
100
A
FSM
2
2
I t
42
-40 to +150
-40 to +125
2500
A s
T
T
°
C
°
C
J
STG
V
Isolation Voltage
@ AC 1minute
@ M4
V
ISO
Mounting
T
o
rque
Mounting part Screw
2.0
N·m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
FMS6G10US60
Device
FMS6G10US60
Package
25PM-AA
Reel Size
Tape Width
Quantity
—
—
—
(2) TMC2 Relibility test was done under -45
°
C ~ 125
°
C
2
FMS6G10US60 Rev. B1
Electrical Characteristics of IGBT
@ Inverter
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
= 0
V
, I
=
2
50
µ
A
600
—
—
—
—
V
CES
GE
C
∆
B
/
T
e
mperature Coeff. of Breakdown
Voltage
= 0
V
, I
=
1
mA
0.6
V/
°
C
VCES
J
GE
C
∆
T
I
I
Collector Cut-Off Current
V
V
= V
= V
, V
= 0V
—
—
—
—
250
µ
A
CES
GES
CE
CES
GE
Gate – Emitter Leakage Current
, V
= 0V
± 100
nA
GE
GES
CE
On Characteristics
V
V
Gate – Emitter
Threshold Voltage
I
I
= 10mA, V
= V
GE
5.0
—
6.5
2.1
8.5
2.7
V
V
GE(th)
C
C
CE
Collector to Emitter Saturation Voltage
= 10A
,
V
= 15V
GE
CE(sat)
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 30V
V =
0V,
—
—
—
710
57
—
—
—
pF
pF
pF
ies
CE
,
GE
f = 1MHz
Output Capacitance
oes
res
Reverse Transfer Capacitance
12
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
V
= 300
V
, I
=
1
0A,
—
—
—
—
—
—
—
—
—
—
—
—
10
65
65
130
130
160
200
—
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
µ
s
d(on)
CC
G
C
R
= 20
Ω
, V
= 15V,
GE
r
Inductive Load, T
= 25
°
C
C
Turn-Off Delay Time
Fall Time
80
d(off)
f
100
0.15
0.2
70
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
on
—
off
t
t
t
t
V
R
= 300
V
, I
=
1
0A,
140
120
180
350
—
d(on)
r
CC
G
C
= 20
Ω
, V
= 15V,
GE
60
Inductive Load, T
= 125
°
C
C
Turn-Off Delay Time
Fall Time
90
d(off)
f
200
0.16
0.3
—
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
on
—
off
T
V
= 300
V
, V
=
1
5V
—
sc
CC
GE
@ T
= 100
°
C
C
Q
T
o
tal Gate Charge
V
V
= 300
V
, I
=
1
0A,
—
—
—
35
8
50
15
20
nC
nC
nC
g
CE
GE
C
= 15V
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
ge
gc
12
3
FMS6G10US60 Rev. B1
Electrical Characteristics of DIODE
@ Inverter
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Diode Forward Voltage
Test Conditions
Min.
Typ. Max. Units
V
I
= 10A
T
T
T
T
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
25
°
C
= 100
°
C
—
—
—
—
—
—
—
—
1.9
2.0
85
2.8
V
ns
A
FM
F
C
C
C
C
C
C
C
C
—
t
I
Diode Reverse Recovery Time
I =
10A
di / dt = 20 A/
µ
s
=
150
—
rr
F
110
0.7
1.0
30
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
1.4
—
rr
Q
=
105
—
nC
rr
55
Electrical Characteristics of DIODE
@ Converter
T =
25
°
C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.1
1.0
—
Max.
1.5
Units
V
V
Diode Forward Voltage
I
= 10A
T
T
T
T
=
25
°
C
= 100
°
C
25
°
C
= 100
°
C
—
—
—
—
FM
F
C
C
C
C
—
I
Repetitive Reverse Current
V
= V
RRM
=
8
mA
RRM
R
5
—
Thermal Characteristics
Symbol
Parameter
Typ.
—
Max.
1.9
2.9
2.5
—
Units
Inverter
R
R
R
Junction-to-Case (IGBT
Part, per 1/6 Module)
°
C
/
W
°
C
/
W
°
C
/
W
g
θ
JC
θ
JC
θ
JC
Junction-to-Case (DIODE
Part, per 1/6 Module)
Junction-to-Case (DIODE
Part, per 1/6 Module)
Weight of Module
—
Converter
Weight
—
60
NTC Thermistor Characteristics
Symbol
Parameter
Tol.
Typ.
Units
Thermistor
R25
Rated Resistance
@ T
= 25
°
C
+/- 5 %
4.7
K
Ω
C
B(25/100)
B – Value
+/- 3 %
3530
4
FMS6G10US60 Rev. B1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
30
40
20 V
15 V
Common Emitter
T
C
= 25
o
C
Common Emitter
35
30
25
20
15
10
5
12 V
25
V
GE
= 15 V
T
C
= 25
℃
ꢀ
ꢀ
T
C
= 125
℃
——
20
15
10
5
V
= 10 V
G
0
0
0
2
4
6
8
1
10
C
o
l
l e
c
t or
– E
m
i
tt
e
r
V
o
lt ag
e
,
V
[
V
]
C
o
l
l e
c
t or
– E
m
i
tt
e
r
V
o
lt ag
e
,
V
[
V
]
C
CE
Figure 3. Saturation Voltage vs. Case
Figure 4. Transient Thermal Impedance
Temperature at Variant Current Level
4. 0
3. 5
3. 0
2. 5
2. 0
1. 5
1. 0
10
Common Emitter
V
GE
= 15 V
20 A
10 A
FRD
1
I
G
BT
0.1
I
= 5 A
S
i n
g
l e
P
u
l
s
e
( Th
e
r
mal
R
e
s
pons
e
)
-50
0
50
100
150
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
o
C
a
se Te
m
p
e
r at ur e,
T [ C]
Rectangular Pulse Duration [sec]
Figure 5. Saturation Voltage vs. V
GE
20
Figure 6. Saturation Voltage vs. V
GE
20
Common Emitter
T
C
= 125
℃
Common Emitter
T
C
= 25
℃
16
16
12
8
12
8
20A
4
4
0
10A
20A
1
0
A
I
= 5A
8
I
= 5A
8
C
0
0
4
12
16
20
0
4
12
16
20
Gat e – E
m
i
tt
e
r
V
o
lt a
g
e
,
V
[
V
]
Gat e – E
m
i
tt
e
r
V
o
lt a
g
e
,
V
[
V
]
G
GE
5
FMS6G10US60 Rev. B1
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1600
1000
Common Emitter
V
CC
= 300 V, V
GE
= ±
15 V
I
C
= 10 A
Common Emitter
C
i es
1400
1200
1000
800
600
400
200
0
V
GE
= 0 V, f = 1 MHz
T
C
= 25
o
C
T
C
= 25
℃
ꢀ
ꢀ
T
C
= 125
℃
——
Coes
Cr
e
s
Ton
Tr
100
0. 1
1
10
20
40
60
80
100
120
]
140
C
o
l
l e
c
t or
– E
m
i
tt
e
r
V
o
l
t a
g
e
,
V
[
V
]
Gat e
R
e
s
i st
a
nc
e
,
R [
CE
Ω
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
V
CC
= 300 V, V
GE
= ±
15 V
I
C
= 10 A
Common Emitter
V
CC
= 300 V, V
GE
= ±
15 V
1000
I
C
= 10 A
T
C
= 25
℃
ꢀ
ꢀ
1000
T
C
= 25
℃
ꢀ
ꢀ
T
C
= 125
℃
——
T
C
= 125
℃
——
E
o
f
f
Eon
T
o
f
f
Tf
E
o
f
f
100
100
Tf
20
40
60
80
100
120
140
20
40
60
80
100
120
]
140
Gat e
R
e
s
i st
a
nc
e
,
R [
Gat e
R
e
s
i st
a
nc
e
,
R [
Ω]
Ω
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Common Emitter
1000
V
GE
= ±
15 V,
R
G
= 20
Ω
V
GE
= ±
15 V,
R
G
= 20
Ω
1000
T
C
=
25
℃
ꢀ
ꢀ
T
C
= 25
℃
ꢀ
ꢀ
T
C
= 125
℃
——
T
C
= 125
℃
——
T
o
f
f
Tf
Ton
Tr
100
T
o
f
f
Tf
100
5
10
15
20
5
10
15
20
C
o
l
l e
c
t or
C
u
r
r e
n
t
, I
[
A
]
C
o
l
l e
c
t or
C
u
r
r e
n
t
, I
[
A
]
6
FMS6G10US60 Rev. B1
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
15
V
= 100 V
C
Common Emitter
Common Emitter
300 V
V
GE
= ±
15 V,
R
G
= 20
Ω
R
L
= 30
Ω
12
9
T
C
= 25
o
C
T
C
= 25
℃
ꢀ
ꢀ
200 V
T
C
= 125
℃
——
1000
E
o
f
f
Eon
6
E
o
f
f
3
100
0
0
5
10
15
20
25
30
35
40
5
10
15
20
Gat e
C
h
a
r
g
e
,
Q
[
n
C
]
C
o
l
l e
c
t or
C
u
r
r e
n
t
, I
[
A
]
Figure 15. SOA Characteristics
Figure 16. RBSOA Characteristics
100
50
I
C
MAX. (Pulsed)
50us
10
I
C
MAX. (Continuous)
10
100us
1ms
1
0. 1
DC Operation
1
Single Nonrepetitive
Pulse T
C
= 25
℃
Single Nonrepetitive
Curves must be derated
linearly with increase
in temperature
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 20
Ω
0.
0
1
0.1
0. 1
1
10
100
1000
0
100
200
300
400
500
600
700
C
o
l
l e
c
t or
–
E
m
itt
e
r
V
o
lt a
g
e
,
V
[
V
]
CE
Collector-Emitter Voltage,
V
CE
[V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Characteristics
20
40
Common Cathode
V
GE
= 0V
T
C
25
℃
C
= 125
℃
10
35
30
25
20
15
10
5
T
rr
=
T
1
I
rr
Common Cathode
di/dt = 20A/
㎲
T
C
= 25
℃
T
C
= 100
℃
———
0.1
0
2
4
6
8
10
12
0
1
2
3
4
Forward Current, I
F
[A]
Forward Voltage,
V
F
[V]
7
FMS6G10US60 Rev. B1
Typical Performance Characteristics
(Continued)
Figure 19. Rectifier (Converter) Characteristics
Figure 20. Rectifier (Converter) Characteristics
100
1000
100
o
T
= 125
C
o
T
= 125
C
10
10
1
o
25
C
1
0. 1
o
25
C
0.
0
1
1E-3
0. 1
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
0
400
800
1200
1600
I n
s
t
a
n
t
a
neous V
o
l
t a
g
e
,
V
[
V
]
Re
v
e
r
s
e V
o
lt ag
e
,
V
[
V
]
F
R
Figure 21. NTC Characteristics
16
12
8
4
0
0
25
50
75
100
125
o
Te
m
p
e
r at ur e,
T [
C]
8
FMS6G10US60 Rev. B1
Mechanical Dimensions
25PM-AA
-. Pin Coordinate
Coordinate
Pin
#No
x
y
Name Plate
1
0.0
0.0
0.0
2
-3.0
3
-6.0
0.0
4
-13.0
-18.0
-25.0
-29.0
-32.0
-35.0
-38.0
-46.5
-49.5
-49.5
-49.5
-49.5
-32.0
-29.0
-23.0
-20.0
-14.0
-11.0
3.5
0.0
82.2
0.20
71.0
+
–
0
0
.
.
1
2
0
0
57.0
0.20
5
0.0
4
–
Ø
6.0
6
0.0
4
–
Ø
2.0
0.10
Dp
6.0
7
0.0
2
–
Ø
4.3
+
–
0
0
.
.
2
0
0
0
Mounting-Hole
8
0.0
15
22
1
9
0.0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0.0
0.0
12
0.0
11.5
20.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
20.0
11.5
5.5
23.0
0.15
4.3
0.20
Ø
1.0
0.05
3.5
3.5
3.5
* datum pin : #1
* Pin Tilt :
0.15
Dimensions in Millimeters
9
FMS6G10US60 Rev. B1
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®
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®
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Build it Now™
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FASTr™
PowerTrench
®
®
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QFET
QS™
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TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
CROSSVOLT
™
DOME™
®
HiSeC™
UltraFET
2
EcoSPARK™
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MSXPro™
UniFET™
VCX™
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E CMOS™
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™
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®
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SILENT SWITCHER
Wire™
®
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Across the board. Around the world.™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
10
FMS6G10US60 Rev. B1
