onsemi-FNB40560B2
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FNB40560 / FNB40560B2
®
Motion SPM
45 Series
Features
• UL
Certified No. E209204 (UL1557)
General Description
FNB40560 / FNB40560B2 is a Motion SPM
®
45 module
providing a fully-featured, high-performance inverter out-
put stage for
AC Induction, BLDC, and PMSM motors.
These modules integrate
optimized gate drive of
the built-in IGB
T
s
t
o minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, ther-
mal monitoring, and fault reporting. The built-in, high-
speed HVIC
requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to prop-
erly drive the module’s robust short-circuit-rated IGB
T
s
.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
• 600
V – 5 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low
Thermal Resistance Using Ceramic Substrate
• Low-Loss,
Short-Circuit Rated IGB
T
s
• Built-In
Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In
NTC Thermistor for
T
e
mperature Monitoring
• Separate
Open-Emitter Pins from Low-Side IGB
T
s
f
or
Three-Phase Current Sensing
• Single-Grounded
Power Supply
• Isolation
Rating: 2000 V
rms
/ min.
Applications
• Motion
Control – Home Appliance / Industrial Motor
Related Resources
• AN-9070
– Motion SPM® 45 Series Users Guide
• AN-9071
– Motion SPM® 45 Series Thermal Perfor-
mance Information
• AN-9072
– Motion SPM® 45 Series Mounting Guid-
ance
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FNB40560
FNB40560B2
Device Marking
FNB40560
Package
SPMAA-A26
SPMAA-C26
Packing Type
Quantity
Rail
Rail
12
12
FNB40560B2
1
Publication Order Number:
©2011
Semiconductor Components Industries, LLC.
September-2017, Rev. 3
FNB40560/D
Integrated Power Functions
•
600 V – 5 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
•
For inverter high-side IGB
T
s
: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
•
For inverter low-side IGB
T
s
: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
•
•
Fault signaling: corresponding to UVLO (low-side supply) and SC faults
Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
V
B(
U
)
(26)
V
S(U)
(25)
V
TH
(1)
R
TH
(2)
V
B(V)
(24)
V
S(
V
)
(
2
3)
P(3)
V
B(
W
)
(22)
V
S
(
W)
(21)
U(4)
V(5)
IN
(UH)
(20)
IN
(VH)
(19)
IN
(WH)
(
1
8)
Case Temperature (T
C
)
Detecting Point
V
CC(H)
(17)
V
CC(L)
(16)
W(6)
COM(15)
IN
(UL)
(14)
IN
(VL)
(13)
IN
(
W
L
)
(12)
N
U
(7)
N
V
(8)
N
W
(9)
V
F
O
(11)
C
S
C
(10)
Figure 2. Top View
2
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
V
TH
R
TH
Thermistor Bias Voltage
2
Series Resistor for the Use of Thermistor (
T
e
mperature Detection)
Positive DC-Link Input
3
P
4
U
Output for U-Phase
5
V
Output for V-Phase
6
W
Output for W-Phase
7
N
U
Negative DC-Link Input for U-Phase
8
N
V
Negative DC-Link Input for V-Phase
9
N
W
Negative DC-Link Input for W-Phase
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
C
SC
Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
Fault Output
V
FO
IN
(WL)
IN
(VL)
IN
(UL)
COM
V
CC(L)
V
CC(H)
IN
(WH)
IN
(VH)
IN
(UH)
V
S(W)
V
B(W)
V
S(V)
V
B(V)
V
S(U)
V
B(U)
Signal Input for Low-Side W-Phase
Signal Input for Low-Side V-Phase
Signal Input for Low-Side U-Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGB
T
s
D
riving
High-Side Common Bias Voltage for IC and IGB
T
s
D
riving
Signal Input for High-Side W-Phase
Signal Input for High-Side V-Phase
Signal Input for High-Side U-Phase
High-Side Bias Voltage Ground for W-Phase IGBT Driving
High-Side Bias Voltage for W-Phase IGBT Driving
High-Side Bias Voltage Ground for V-Phase IGBT Driving
High-Side Bias Voltage for V-Phase IGBT Driving
High-Side Bias Voltage Ground for U-Phase IGBT Driving
High-Side Bias Voltage for U-Phase IGBT Driving
3
Internal Equivalent Circuit and Input/Output Pins
V
TH
(1)
R
TH
(2)
P (3)
Thermister
(26) V
B(U)
UVB
(25) V
S(U)
UVS
OUT(UH)
(24) V
B(V)
U(4)
VVB
VVS
UVS
(23) V
S(V)
(22) V
B(W)
(21) V
S(W)
WVB
WVS
OUT(VH)
VVS
(20) IN
(UH)
IN(UH)
IN(VH)
IN(WH)
VCC
V (5)
(19) IN
(VH)
(18) IN
(WH)
(17) V
CC(H)
OUT(WH)
WVS
COM
W(6)
(16) V
CC(L)
(15) COM
VCC
OUT(UL)
OUT(VL)
COM
N
U
(7)
N
V
(8)
N
W
(9)
(14) IN
(UL)
(13) IN
(VL)
IN(UL)
IN(VL)
IN(WL)
(12) IN
(WL)
(11) V
FO
VFO
(10) C
SC
C(SC)
OUT(WL)
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter high-side is composed of three IGB
T
s
, freewheeling diodes, and one control IC for each IGB
T
.
2. Inverter low-side is composed of three IGB
T
s
, freewheeling diodes, and one control IC for each IGB
T
.
I
t has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
4
Absolute Maximum Ratings
(T
J
= 25°C,
unless otherwise specified.)
Inverter Part
Symbol
V
PN
Parameter
Conditions
Applied between P – N
U
, N
V
, N
W
Applied between P – N
U
, N
V
, N
W
Rating
450
500
600
5
Unit
Supply Voltage
V
V
V
A
A
A
V
PN(Surge)
V
CES
Supply Voltage (Surge)
Collector – Emitter Voltage
Output Phase Current
I
O,25
T
C
= 25°C,
T
J
＜
150°C (2nd
Note 1)
T
C
= 100°C
,
T
J
＜
150°C (2nd
Note 1)
I
O,100
I
pk
Output Phase Current
2.5
Output Peak Phase Current
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
7.5
Width
P
C
T
J
Collector Dissipation
T
C
= 25°C per Chip
(2nd Note 2)
29
W
Operating Junction
T
e
mperature
-40 ~ 150
°C
2nd Notes:
1. Sinusoidal PWM at V
= 300 V, V
= V
= 15 V, T
＜
150
℃
, F
SW
= 20 kHz, MI = 0.9, PF = 0.8
®
PN
CC
BS
J
2. The maximum junction temperature rating of the power chips integrated within the Motion SPM
45 product is 150
C.
Control Part
Symbol
V
CC
Parameter
Conditions
Rating
20
Unit
Control Supply Voltage
Applied between V
CC(H)
, V
CC(L)
– COM
V
V
V
BS
High – Side Control Bias Voltage
Applied between V
B(U)
– V
S(U)
, V
B(V)
– V
S(V)
,
,
20
V
B(W)
– V
S(W)
V
IN
Input Signal Voltage
Applied between IN
(UH)
,
IN
(VH)
,
IN
(WH)
-0.3 ~ V
CC
+ 0.3
V
IN
(UL)
, IN
(VL)
, IN
(WL)
– COM
Applied between V
FO
– COM
Sink Current at V
FO
pin
V
FO
I
FO
Fault Output Supply Voltage
Fault Output Current
-0.3 ~ V
CC
+ 0.3
1
V
mA
V
V
SC
Current-Sensing Input Voltage
Applied between C
SC
– COM
-0.3 ~ V
CC
+ 0.3
Bootstrap Diode Part
Symbol
Parameter
Conditions
Rating
600
Unit
V
RRM
I
F
Maximum Repetitive Reverse Voltage
Forward Current
V
A
A
T
C
= 25°C, T
J
＜
150°C
0.50
I
FP
Forward Current (Peak)
T
C
= 25°C, T
J
＜
150°C, Under 1 ms Pulse
1.50
Width
T
J
Operating Junction
T
e
mperature
-40 ~ 150
°C
Total System
Symbol
Parameter
Conditions
Rating
Unit
V
PN(PROT)
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
V
CC
= V
BS
= 13.5 ~ 16.5 V
T
J
= 150°C,
Non-Repetitive, < 2
s
400
V
T
STG
V
ISO
Storage
T
e
mperature
Isolation Voltage
-40 ~ 125
2000
°C
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
V
rms
Thermal Resistance
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
R
th(j-c)Q
R
th(j-c)F
Junction to Case Thermal Resistance
Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
–
–
–
–
4.2
5.9
°C / W
°C / W
2nd Notes:
3. For
the measurement point of case temperature (T
), please refer to Figure 2.
C
5
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
V
CE(SAT)
Collector – Emitter Saturation
V
CC
= V
BS
= 15 V
I
C
= 2.5 A, T
J
= 25°C
–
1.4
1.9
V
Voltage
V
IN
= 5 V
V
F
FWDi Forward Voltage
Switching Times
V
IN
= 0 V
I
F
= 2.5 A, T
J
= 25°C
–
1.4
0.65
0.10
0.70
0.20
0.15
0.65
0.10
0.70
0.20
0.15
–
1.9
1.15
0.35
1.20
0.45
–
V
s
s
s
s
s
s
s
s
s
s
mA
HS
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
V
PN
= 300 V, V
CC
= V
BS
= 15
V
,
I
C
= 2.5 A
T
J
= 25°C
V
IN
= 0 V
5 V, Inductive Load
(2nd Note 4)
0.35
–
–
–
–
LS
t
ON
V
PN
= 300 V, V
CC
= V
BS
= 15
V
,
I
C
= 2.5 A
T
J
= 25°C
0.35
1.15
0.35
1.20
0.45
–
t
C(ON)
t
OFF
t
C(OFF)
t
rr
–
–
–
–
–
V
IN
= 0 V
5 V, Inductive Load
(2nd Note 4)
I
CES
Collector – Emitter Leakage
V
CE
= V
CES
Current
1
2nd Notes:
4. and
t
t
include the propagation delay of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally. For
C(OFF)
ON
OFF
C(ON)
the detailed information, please see Figure 4.
100% I
C
100% I
C
t
rr
V
CE
I
C
I
C
V
CE
V
IN
V
IN
t
O
N
t
O
FF
t
C(ON)
t
C
(OFF)
10% I
C
V
IN(ON)
V
IN(OFF)
10% V
CE
10% I
C
90% I
C
10% V
CE
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
6
Inductive Load, V
P
N
=300V, V
C
C
=15V, T
J
=150
℃
Inductive Load, V
P
N
=300V, V
C
C
=15V, T
J
=25
℃
200
160
120
80
200
160
120
80
IGBT Turn-ON,
E
on
IGBT Turn-OFF,
E
off
IGBT Turn-ON,
E
on
IGBT Turn-OFF,
E
off
FRD Turn-OFF,
E
FRD Turn-OFF,
E
rec
rec
40
40
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR CURRENT, I
c
[AMPERES]
COLLECTOR CURRENT, I
c
[AMPERES]
Figure 5. Switching Loss Characteristics (Typical)
Control Part
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
I
QCCH
I
QCCL
I
PCCH
Quiescent V
CC
Supply V
CC(H)
= 15 V, IN
(UH,VH,WH)
= 0 V
V
CC(H)
– COM
–
–
–
–
–
–
0.10
2.65
0.15
mA
mA
mA
Current
V
CC(L)
= 15
V
,
I
N
(UL,VL, WL)
= 0 V
V
CC(L)
– COM
Operating V
CC
Supply V
CC(L)
= 15
V
, f
PWM
= 20 kHz, duty
V
CC(H)
– COM
Current
= 50%, Applied to One PWM Sig-
nal Input for High-Side
I
PCCL
V
CC(L)
= 15
V
, f
PWM
= 20 kHz, duty
V
CC(L)
– COM
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
–
–
3.65
mA
I
QBS
I
PBS
Quiescent V
BS
Supply V
BS
= 15
V
,
I
N
(UH, VH, WH)
= 0 V
Current
V
B(U)
– V
S(U)
, V
B(V)
V
S(V)
, V
B(W)
– V
S(W)
–
–
–
–
–
0.30
2.00
mA
mA
Operating V
BS
Supply V
CC
= V
BS
= 15 V, f
PWM
= 20 kHz,
V
B(U)
– V
S(U)
, V
B(V)
–
Current
Duty = 50%, Applied to One PWM
V
S(V)
, V
B(W)
– V
S(W)
Signal Input for High-Side
V
FOH
V
FOL
Fault Output Voltage
V
SC
= 0 V, V
FO
Circuit: 10 k
to 5 V Pull-up
V
SC
= 1 V, V
FO
Circuit: 10 k
to 5 V Pull-up
V
CC
= 15 V (2nd Note 5)
4.5
–
–
–
–
V
V
V
0.5
0.55
V
SC(ref)
Short-Circuit
Current Trip Level
0.45
0.50
UV
CCD
UV
CCR
UV
BSD
UV
BSR
t
FOD
Detection level
Reset level
10.5
11.0
10.0
10.5
30
–
13.0
V
V
Supply Circuit
Under-Voltage
Protection
–
–
13.5
Detection level
Reset level
12.5
V
–
13.0
V
Fault-Out Pulse Width
–
–
s
V
V
IN(ON)
ON Threshold Voltage
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
–
–
2.6
IN
(WL)
– COM
V
IN(OFF)
OFF Threshold Voltage
0.8
–
–
–
–
–
V
R
TH
Resistance of
Thermister
@T
TH
= 25°C, (2nd Note 6)
@T
TH
= 100°C
47
2.9
k
k
–
2nd Notes:
5. Short-circuit protection is functioning only at the low-sides.
6. T
is the temperature of thermister itselt.
T
o
k
now case temperature (T
), please make the experiment considering your application.
TH
C
7
R-T Curve
600
550
500
450
400
350
300
250
200
150
100
50
R-T Curve in 50
℃
~ 125
℃
20
16
12
8
4
0
50
60
70
80
90
100
110
120
Temperature [
℃
]
0
-20 -10
0
10
20
30
40
50
60
70
80
90 100
110 120
Temperature T
TH
[
℃
]
Figure. 6. R-T Curve of The Built-In Thermistor
Bootstrap Diode Part
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
V
F
t
rr
Forward Voltage
Reverse-Recovery Time
I
F
= 0.1 A, T
C
= 25°C
I
F
= 0.1 A, T
C
= 25°C
–
–
2.5
80
–
–
V
ns
Built-In Bootstrap Diode V
F
-I
F
Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
C
=25
o
C
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V
F
[V]
Figure 7. Built-In Bootstrap Diode Characteristic
2nd Notes:
7. Built-in
bootstrap diode includes around 15
Ω
resistance characteristic.
8
Recommended Operating Conditions
Symbol
V
PN
Parameter
Conditions
Applied between P – N
U
, N
V
, N
W
Applied between V
CC(H)
, V
CC(L)
– COM
Min. Typ. Max.
Unit
Supply Voltage
–
300
15
400
16.5
18.5
V
V
V
V
CC
Control Supply Voltage
High-Side Bias Voltage
13.5
13.0
V
BS
Applied between V
B(U)
– V
S(U)
, V
B(V)
– V
S(V)
, V
B(W)
V
S(W)
–
15
dV
CC
/ dt,
Control Supply Variation
dV
BS
/ dt
– 1
–
–
–
1
–
V /
s
s
t
dead
Blanking Time for
For each input signal
1.5
Preventing Arm-Short
f
PWM
V
SEN
PWM Input Signal
– 40
C
＜
T
J
＜
150°C
–
20
4
kHz
V
Voltage for Current
Sensing
Applied between N
U
, N
V
, N
W
– COM
(Including Surge-Voltage)
– 4
P
WIN(ON)
Minimun Input Pulse
(2nd Note 8)
0.5
0.5
–
–
–
–
s
Width
P
WIN(OFF)
2nd Notes:
8. This product might not make response if input pulse width is less than the recommanded value.
Allowable Maximum Output Current
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
f
SW
=5kHz
f
SW
=15kHz
V
DC
=300V, V
CC
=V
BS
=15V
T
J
＜
150
℃
,
T
C
≤
125
℃
M.I.=0.9, P.F.=0.8
Sinusoidal PWM
0
10
20
30
40
50
60
70
80
90 100
110 120 130 140
Case Temperature, T
C
[
℃
]
Figure 8. Allowable Maximum Output Current
2nd Notes:
9. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.
9
Mechanical Characteristics and Ratings
Parameter
Conditions
Min.
0
Typ.
–
Max.
+ 120
0.8
Unit
m
Device Flatness
See Figure 9
Mounting
T
o
rque
Weight
Mounting Screw: M3
See Figure 10
Recommended 0.7 N • m
Recommended 7.1 kg • cm
0.6
6.2
–
0.7
7.1
11
N • m
kg • cm
g
8.1
–
Figure 9. Flatness Measurement Position
Pre – Screwing : 1
→
2
Final Screwing : 2
→
1
2
1
Figure 10. Mounting Screws Torque Order
2nd Notes:
10. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
®
11. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the SPM
45
package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
10
Time Charts of Protective Function
Input Signal
Protection
RESET
SET
RESET
Circuit State
UV
CCR
a1
a6
UV
CCD
a2
Control
Supply Voltage
a3
a4
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: after the voltage rises UV
CCR
, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UV
CCD
).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UV
CCR
).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-Side)
Input Signal
Protection
RESET
SET
RESET
Circuit State
UV
BSR
b5
b1
UV
BSD
b2
Control
Supply Voltage
b3
b4
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: after the voltage reaches UV
BSR
, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UV
BSD
).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UV
BSR
).
b6 : Normal operation: IGBT ON and carrying current.
Figure 12. Under-Voltage Protection (High-Side)
11
Lower Arms
Control Input
c6
c7
Protection
Circuit State
SET
RESET
Internal IGBT
Gate – Emitter Voltage
c4
c3
c2
SC
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of Shunt Resistance
CR Circuit Time
Constant Delay
c5
Fault Output Signal
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OF
F
.
c5 : Input “LOW”: IGBT OFF state.
c6 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c7 : IGBT OFF state.
Figure 13. Short-Circuit Protection (Low-Side Operation Only)
Input/Output Interface Circuit
+5 V (for MCU or Control power)
R
PF
= 10 k
Ω
SPM
,
,
IN
(UH)
IN
(VH)
IN
(WH)
,
,
IN
(UL)
IN
(VL)
IN
(WL)
MCU
V
FO
COM
Figure 14. Recommended MCU I/O Interface Circuit
2nd Notes:
12. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed
®
circuit board. The input signal section of the Motion SPM
45 product integrates a 5 k
(
typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay atten-
tion to the signal voltage drop at input terminal.
1
2
HVIC
(26) V
B(U)
P (3)
U (4)
VB(U)
C
BS
C
BS
C
BS
C
BSC
(25) V
S(U)
(20) IN
(UH)
VS(U)
OUT(UH)
VS(U)
R
S
R
S
R
S
IN(UH)
VB(V)
Gating UH
Gating VH
Gating WH
(24) V
B(V)
C
BSC
(23) V
S(V)
(19) IN
(VH)
VS(V)
OUT(VH)
VS(V)
IN(VH)
V (5)
(22) V
B(W)
(21) V
S(W)
M
VB(W)
VS(W)
C
BSC
(18) IN
(WH)
(17) V
CC(H)
C
DCS
V
DC
IN(WH)
VCC
M
C
U
OUT(WH)
VS(W)
+15 V
W (6)
C
PS
C
PS
C
PS
C
SPC15
C
SP15
(15) COM
(16) V
CC(L)
COM
+5 V
LVIC
VCC
VFO
OUT(UL)
R
PF
R
SU
N
U
(7)
N
V
(8)
N
W
(9)
C
SPC05
C
SP05
R
S
(11) V
FO
Fault
C
PF
C
BPF
OUT(VL)
R
S
(14) IN
(UL)
(13) IN
(VL)
(12) IN
(WL)
R
SV
Gating UL
Gating VL
Gating WL
IN(UL)
IN(VL)
IN(WL)
R
S
R
S
C
SC
OUT(WL)
COM
CSC
(10) C
SC
(1) V
TH
(2) R
TH
C
PS
C
PS
C
PS
R
SW
R
F
THERMISTOR
R
TH
U-Phase Current
V-Phase Current
W-Phase Current
Input Signal for
Short-Circuit Protection
Temp. Monitoring
Figure 15. Typical Application Circuit
3rd Notes:
1)
T
o
a
void malfunction, the wiring of each input should be as short as possible (less than 2 – 3 cm).
®
2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM
45 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3) V
output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I
up to 1 mA (please
FO
FO
refer to Figure 14).
4) C
of around seven times larger than bootstrap capacitor C
is recommended.
BS
SP15
5) Input signal is active-HIGH type. There is a 5 k
resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded
for the prevention of
input signal oscillation. R
C time
constant should be selected in the range 50 ~ 150 ns
(
recommended R
= 100
Ω
, C
= 1 nF).
S
PS
S
PS
6)
T
o
p
revent errors of the protection function, the wiring around R
and C
should be as short as possible.
F
SC
7) In the short-circuit protection circuit, please select the R
C time
constant in the range 1.5 ~ 2
s.
F
SC
8) The connection between control GND line and power GND line which includes the N
, N , N
must be connected to only one point. Please do not connect the control GND
U
V
W
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
10)
T
o
p
revent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short
as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22
F between the P and GND pins is recommended.
11) Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there
should be sufficient distance between the MCU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15
Ω
).
13) Please choose the electrolytic capacitor with good temperature characteristic in C
. Also, choose 0.1 ~ 0.2
F R-category ceramic capacitors with good temperature and
BS
frequency characteristics in C
.
BSC
14) For the detailed information, please refer to the AN-9070, AN-9071, AN-9072, RD-344, and RD-345.
1
3
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