onsemi-FP7G75US60
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July 2008
Power-SP
M
TM
FP7G75US60
Transfer Molded Type IGBT Module
tm
General Description
Fairchild’s New IGBT Modules ( Transfer Molded Type ) provide
low conduction and switching losses as well as short circuit
ruggedness. They are designed for applications such as Motor
control, Uninterrupted Power Supplies (UPS) and general
Inverters where short circuit ruggedness is a required feature.
Features
•
•
•
•
•
Short Circuit rated 10us @
T
c
=100
°
C, Vge=15V
High Speed Switching
Low Saturation Voltage : Vce(sat) =2.2V @Ic=75A
High Input Impedance
Package Code : EPM7
Fast & Soft Anti-Parallel FWD
1
Application
2
3
•
•
•
•
•
•
Welders
AC & DC Motor Controls
General Purpose Inverters
Robotics
4
5
6
7
Servo Controls
UPS
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
Description
Rating
600
Units
V
V
CES
V
GES
I
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
±
20
75
V
@ T
C
=
25
°
C
A
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
Pulsed Collector Current
150
A
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
Isolation Voltage
@ T
C
= 100
°
C
@ T
C
= 100
°
C
75
A
150
A
10
us
W
@ T
C
=
25
°
C
310
-40 to +125
-40 to +125
2500
2.0
°
C
°
C
V
T
stg
V
iso
@ AC 1minute
Power
T
e
rminals Screw : M5
Mounting Screw : M5
N.m
N.m
Mounting
T
o
rque
2.0
©2008 Fairchild Semiconductor Corporation
FP7G75US60 Rev. A
1
Pin Configuration and Pin Description
Top View
1
2
3
4 5
6
7
Internal Circuit Diagram
Pin Description
Pin Number
Pin Description
Emitter of Q1, IGB
T
,
Collector of Q2, IGBT
1
2
3
4
5
6
7
Emitter of Q2, IGBT
Collector of Q1, IGBT
Gate of Q1, IGBT
Emitter of Q1, IGBT
Gate of Q2, IGBT
Emitter of Q2, IGBT
2
FP7G75US60 Rev. A
Electrical Characteristics
(T
J
= 25°C,
Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0
V
,
I
C
= 250
µ
A
600
–
–
–
–
V
V
∆
BV
CES
∆
T
J
/
T
e
mperature Coeff. of Breakdown Voltage
V
GE
= 0
V
,
I
C
= 1mA
0.6
I
CES
I
GES
Collector Cut-off Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
–
–
–
–
250
uA
nA
Gate-Emitter Leakage Current
±
100
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
V
GE
= 0
V
,
I
C
=75mA
I
C
= 75A
,
V
GE
= 15V
5.0
–
6.0
2.2
8.5
2.8
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Capacitance
–
–
–
4515
550
–
—
–
pF
pF
pF
V
CE
= 30
V
,
V
GE
= 0
V
,
f = 1MHz
100
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
–
–
33
29
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
Turn-Off Delay Time
Fall Time
–
92
ns
V
CC
= 300 V, I
C
= 75A,
R
G
= 3.3
Ω
, V
GE
= 15V
–
91
ns
Inductive Load, T
C
= 25
°
C
E
on
E
off
E
ts
t
d(on)
t
r
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Turn-On Delay Time
Rise Time
–
0.75
0.72
1.47
27
mJ
mJ
mJ
ns
–
–
–
–
22
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–
96
ns
V
R
CC
= 300 V, I
C
= 75A,
G
= 3.3
Ω
, V
GE
= 15V
–
197
0.73
1.47
2.2
–
ns
Inductive Load, T
C
= 125
°
C
E
on
E
off
E
ts
T
sc
Q
g
Turn-On Switching Loss
Turn-Off Switching Loss
T
o
tal Switching Loss
Short Circuit Withstand Time
T
o
tal Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
–
mJ
mJ
mJ
us
–
–
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
–
205
40
nC
nC
nC
Q
ge
Q
gc
V
CE
= 300 V, I
C
= 75A, V
GE
= 15V
–
–
115
3
FP7G75US60 Rev. A
Electrical Characteristics of DIODE
(T
J
= 25°C,
Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
T
C
=
25
°
C
T
C
= 100
°
C
T
C
25
°
C
T
C
= 100
°
C
T
C
25
°
C
T
C
= 100
°
C
T
C
25
°
C
T
C
= 100
°
C
–
–
–
–
–
–
–
–
1.9
1.8
78
2.8
–
V
FM
Diode Forward Voltage
I
F
= 75A
V
ns
A
=
112
t
rr
Diode Reverse Recovery Time
156
5.7
10
=
7.5
I
F
= 75A
di / dt = 150 A/us
I
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
222
780
Q
rr
nC
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.32
0.9
–
Units
R
θ
JC
Junction-to-Case (IGBT
Part, per 1/2 Module)
Junction-to-Case (DIODE
Part, per 1/2 Module)
–
°
C
/
W
°
C
/
W
°
C
/
W
g
R
θ
JC
–
0.05
–
R
θ
CS
Weight
Case-to-Sink
(Conductive grease applied)
Weight of Module
90
4
FP7G75US60 Rev. A
Typical Performance Characteristics
Fig 2.
Typical Saturation Voltage Characteristics
Fig 1.
Typical Output Characteristics
200
200
Common Emitter
V
GE
= 15V
T
C
= 25
o
T
C
= 125
o
20V
15V
12V
C
160
120
80
160
120
80
C
V
GE
= 10V
40
40
Common Emitter
T
C
= 25
o
C
0
0
0.3
0
2
4
6
8
1
10
20
V
CE
, Collector-Emitter Voltage[V]
V
CE
, Collector-Emitter Voltage[V]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
5
4
3
2
1
0
120
V
CC
= 300V
Load Current : peak of square wave
Common Emitter
V
G
E
= 15V
100
80
60
40
20
0
150A
75A
I
C
= 40A
Duty cycle : 50%
T
C
= 100
o
Power Dissipation = 130W
C
0
50
100
150
0.1
1
10
100
1000
T
C
,
C
ase Temperature[
o
C
]
Frequency [Khz]
Fig 6. Saturation Voltage vs. V
Fig 5. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
T
C
= 25
o
Common Emitter
C
= 25
o
C
T
C
16
12
8
16
12
8
150A
150A
4
75A
4
75A
I
C
= 40A
I
C
= 40A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage[V]
V
GE
, Gate-Emitter Voltage[V]
5
FP7G75US60 Rev. A
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
9000
6000
3000
0
1000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
Common Emitter
V
GE
= 0V, f = 1MHz
Cies
T
C
= 25
o
C
C
= 25
o
C
T
C
= 125
o
C
Ton
Tr
T
Coes
100
10
Cres
0.5
1
10
30
1
10
R
G
, Gate Resistance[
Ω
]
V
CE
, Collector-Emitter Voltage[V]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
5000
100
Common Emitter
CC
= 300V, V
GE
= +/- 15V
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
V
I
C
= 75A
I
C
= 75A
T
C
= 25
o
C
C
= 125
o
C
T
C
= 25
o
C
1000
100
10
T
C
= 125
o
C
10
1
T
Toff
Eon
Eoff
Tf
Tf
0.1
1
10
R
G
, Gate Resistance[
Ω
]
50
1
10
R
G
, Gate Resistance[
Ω
]
Fig 12. Turn-Off Characteristics vs.
Collector Current
Fig 11. Turn-On Characteristics vs.
Collector Current
10000
1000
100
10
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25
o
C
T
C
= 25
o
C
1000
T
C
= 125
o
C
T
C
= 125
o
C
Toff
Tf
Ton
Tr
100
10
Tf
1
20
40
60
80 100
120 140
20 40 60 80
100 120 140
I
C
, Collector Current[A]
I
C
, Collector Current[A]
6
FP7G75US60 Rev. A
Fig 14. Gate Charge Characteristics
15
Fig 13. Switching Loss vs. Collector
100
Common Emitter
300 V
V
CC
= 300V, V
GE
= +/- 15V
12
I
C
= 75A
T
T
C
= 25
o
C
200 V
C
= 125
o
C
10
1
V
CC
= 100 V
9
Eoff
Eon
6
Common Emitter
R
L
= 4
Ω
T
C
= 25
o
C
3
0
0.1
0
100
200
20 40 60 80
100 120 140
I
C
, Collector Current[A]
Q
g
, Gate Charge[nC]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
500
100
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
50us
100
100us
1ms
10
1
DC Operation
10
1
Single Nonrepetitive
Pulse T
C
= 25
o
C
Curves must be derated
linerarly with increase
in temperature
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
0.1
0.3
1
10
100
1000
1
10
100
1000
V
CE
, Collector-Emitter Voltage[V]
V
CE
, Collector-Emitter Voltage[V]
Fig 18. Transient Thermal Impedance
1
Fig 17. RBSOA Characteristics
600
100
0.1
10
1
0.01
1E-3
Single Nonrepetitive
= C
125
o
T
C
= 25
o
C
Pulse T
J
V
GE
= 15V
R
G
= 3.3
Ω
IGBT
:
DIODE :
0.1
0
100 200 300 400 500 600 700
V
CE
, Collector-Emitter Voltage[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration[sec]
7
FP7G75US60 Rev. A
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
30
200
150
100
50
Common Cathode
V
GE
= 0V
25
o
C
C
T
rr
T
C
=
T
C
= 125
o
I
rr
10
T
rr
I
rr
Common Cathode
di/dt = 150A/us
T
C
=
25
o
C
C
T
C
= 100
o
1
0
0
20
40
60
80
0
1
2
3
4
I
F
, Forward Current[A]
V
F
, Forward Voltage[V]
8
FP7G75US60 Rev. A
±0.50
±0.50
23.00
±0.50
±0.50
16.22
±0.50
±0.10
23.50
23.00
5.08
±0.50
18.40
+0.50
±0.10
10.00
1.00
14.50
-0.80
1
2
3
7
6
5
4
±0.30
80.00
±0.10
9.60
±0.30
12.20
±0.50
93.00
(10.00)
(6.50)
(10.00)
(6.50)
(14.00) (9.00) (14.00) (9.00) (14.00)
9
FP7G75US60 Rev. A
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subsidianries, and is not intended to be an exhaustive list of all such trademarks.
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®
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PDP-SPM™
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Build it Now™
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CorePOWER™
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™
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Current Transfer Logic™
EcoSPARK
®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
Quiet Series™
RapidConfigure™
FRFET
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™
TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
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™
®
MicroPak™
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®
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®
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®
Ultra FRFET™
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VCX™
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®
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®
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®
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®
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tm
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*
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are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A
critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
10
FP7G75US60 Rev. A
