onsemi-FPAB30BH60
| Part # | onsemi-FPAB30BH60 |
| Download | onsemi-FPAB30BH60 |
December 2013
FPAB30BH60
PFC SPM
®
3 Series for Single-Phase Boost PFC
Features
• UL
Certified No. E209204 (UL1557)
General Description
The FPAB30BH60 is a PFC SPM
®
3 module providing a
fully-featured, high-performance Boost PFC (Power
Factor Correction) input power stage for consumer,
medical, and industrial applications. These
modules
integrate optimized
gate drive of the
built-in IGBT to
• 600
V – 30 A Single-Phase Boost PFC with Integral
Gate Driver and Protection
• Very Low Thermal Resistance Using Al
2
O
3
DBC
Substrate
minimize
EMI
and
losses,
while
also
• Full-Wave Bridge Rectifier and High-Performance
Output Diode
providing multiple on-module
protection
features
including under-voltage lockout, over-current shutdown,
thermal monitoring, and fault reporting. These modules
also feature a full-wave rectifier, and high-performance
output diode for additional space savings and mounting
convenience
• Built-in
NTC Thermistor for Temperature Monitoring
• Optimized
for 20kHz Switching Frequency
• Isolation
Rating: 2500 Vrms/min.
Applications
• Single-Phase
Boost PFC Converter
Related Source
•
AN-9090 – PFC SPM 3 Series User’s Guide
•
AN-9091 – Boost PFC Inductor Design Guide
Figure 1. Package Overview
Package Marking & Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FPAB30BH60
FPAB30BH60
SPMIA-027
Rail
10
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
1
Integrated Power Functions
•
PFC converter for single-phase AC / DC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
•
•
•
•
For IGB
T
s
: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
Fault signal: corresponding to OC and UV fault
Built-in thermistor: temperature monitoring
Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Top View
12.205
CC
(1)V
(21)P
(2)COM
(3)COM
(4)COM
(5)IN
(22)P
FO
(6)V
(7)C
(23)N.C
FOD
SC
(8)C
TH
(9)R
(10)V
(24)L
(25)PR
(26)R
(27)S
C
Case Temperature (T )
TH
Detecting Point
(11)N.C
(12)N.C
(13)N
(14)N
(15)N
(16)N
(17)NR
(18)NR
DBC Substrate
(19)NR
(20)NR
Figure 2. Top View
Notes :
1. For the measurement point of case temperature(T
), please refer to Figure 2.
C
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
2
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
2,3,4
5
V
CC
COM
IN
Common Bias Voltage for IC and IGBT Driving
Common Supply Ground
Signal Input for IGBT
6
V
FO
C
FOD
C
SC
R
(TH)
V
(TH)
N.C
N
Fault Output
7
Capacitor for Fault Output Duration Selection
Capacitor (Low-Pass Filter) for Over-Current Detection
Series Resistor for The Use of Thermistor
Thermistor Bias Voltage
No Connection*
8
9
10
11,12
13~16
17~20
21,22
23
IGBT Emitter
N
R
Negative DC-Link of Rectifier
Positive Rail of DC-Link
No Connection
P
N.C
L
24
Reactor Connection Pin
Positive DC-Link of Rectifier
AC Input for R-Phase
25
P
R
26
R
27
S
AC Input for S-Phase
* 11th and 12th pins are cut. Please refer to package outline drawings for more detail.
Internal Equivalent Circuit and Input/Output Pins
(10) VTH
NTC
(21,22) P
(24) L
Thermistor
(9) RTH
(8) CSC
CSC
(7) CFOD
CFOD
(6) VFO
VFO
(25) PR
(5) IN
IN
OUT
(26) R
(27) S
(2~4) COM
COM
(1) VCC
VCC
(13~16) N
(17~20) NR
Figure 3. Internal Block Diagram
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
3
Absolute Maximum Ratings
(T
J
= 25°C,
unless otherwise specified.)
Converter Part
Symbol
V
i
Item
Condition
Rating
264
500
450
500
600
250
25
Unit
V
rms
V
Supply Voltage
Applied between R – S
V
i(Surge)
V
PN
Supply Voltage (Surge)
Output Voltage
Applied between R – S
Applied between P – N
Applied between P – N
V
V
PN(Surge)
V
CES
I
FSM
Output Voltage (Surge)
Collector – Emitter Voltage
Peak Forward Surge Current
Input Current (100% Load)
Input Current (125% Load)
V
V
Single Half Sine-Wave
A
I
i
T
C
< 95°C, V
i
= 220 V, V
PN
= 390 V,
V
PWM
= 20 kHz
A
I
i(125%)
T
C
< 95°C, V
i
= 220 V, V
PN
= 390 V,
V
PWM
= 20 kHz,
1 Minite Non-Repetitive
30
A
P
C
T
J
Collector Dissipation
T
C
= 25°C
169
W
Operating Junction
T
e
mperature
-20 ~ 150
°C
Notes:
®
1.The maximum junction temperature rating of the power chips integrated within the PFC SPM
product is 150
C(@T
100
C). However, to insure safe operation of the PFC
C
SPM product, the average junction temperature should be limited to
T
125
C (@T
100
C)
J(ave)
C
Control Part
Symbol
V
CC
Item
Control Supply Voltage
Input Signal Voltage
Condition
Rating
20
Unit
V
Applied between V
CC
– COM
Applied between IN – COM
Applied between V
FO
– COM
Sink Current at V
FO
Pin
V
IN
-0.3 ~ V
CC
+0.3
-0.3 ~ V
CC
+0.3
5
V
V
FO
Fault Output Supply Voltage
Fault Output Current
V
I
FO
mA
V
V
SC
Current Sensing Input Voltage
Applied between C
SC
– COM
-0.3 ~ V
CC
+0.3
Total System
Symbol
Item
Condition
Rating
-20 ~ 100
-40 ~ 125
2500
Unit
°C
T
C
Module Case Operating
T
e
mperature
Storage
T
e
mperature
T
STG
V
ISO
°C
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute, Connect Pins
to Heat Sink Plate
V
rms
Thermal Resistance
Symbol
Item
Condition
Min. Typ. Max. Unit
R
Junction to Case Thermal Resistance
IGBT
FRD
–
–
–
–
–
–
0.74
1.44
2.07
°C/W
°C/W
°C/W
(j-c)Q
R
R
(j-c)F
Rectifier (per 1 / 4 module)
(j-c)R
Notes:
2. For the measurement point of case temperature(T
), please refer to Figure 2.
C
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
4
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified.)
Converter Part
Symbol
V
CE(SAT)
V
FF
Item
Condition
V
CC
= 15 V, V
IN
= 5 V, I
C
= 30 A
I
F
= 30 A
Min. Typ. Max.
Unit
IGBT Saturation Voltage
FRD Forward Voltage
Rectifier Forward Voltage
Switching Times
–
–
–
–
–
–
–
–
–
–
2.0
1.8
1.2
650
400
620
200
60
2.8
V
V
2.5
V
FR
I
F
= 30 A
1.5
V
t
ON
V
PN
= 400 V, V
CC
= 15V, I
C
= 30 A
–
ns
ns
ns
ns
ns
A
V
IN
= 0 V
5
V
,
I
nductive Load
t
C(ON)
t
OFF
t
C(OFF)
t
rr
–
(Note 3)
–
–
–
–
I
rr
3.5
–
I
CES
Collector – Emitter
Leakage Current
V
CE
= V
CES
250
A
Notes:
3.
t
and t
include the propagation delay time of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally.
C(OFF)
ON
OFF
C(ON)
For the detailed information, please see Figure 4.
I
rr
120
%
o
f I
C
100
%
o
f I
C
V
C
E
I
C
90% of I
C
15% of V
C
E
10
%
o
f I
C
15
%
o
f V
C
E
10
%
o
f I
C
I
C
V
C
E
V
V
IN
IN
t
O
N
t
rr
t
C
(ON)
t
C
(
O
FF)
t
O
FF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
5
Control Part
Symbol
I
QCCL
Item
Condition
Min. Typ.
Max. Unit
Quiescent V
CC
Supply Current
V
CC
= 15 V, IN = 0 V
V
CC
– COM
–
4.5
–
–
–
26
–
mA
V
V
FOH
Fault Output Voltage
V
SC
= 0 V, V
FO
Circuit: 4.7 k
to 5 V Pull-up
V
SC
= 1 V, V
FO
Circuit: 4.7 k
to 5 V Pull-up
V
CC
= 15 V
V
FOL
–
0.8
0.55
13.0
13.2
2.0
–
V
V
SC(ref)
UV
CCD
UV
CCR
t
FOD
Over-Current Trip Level
0.45
10.7
11.2
1.4
2.8
–
0.5
11.9
12.4
1.8
–
V
Supply Circuit Under-Voltage
Protection
Detection Level
V
Reset Level
V
Fault-Out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
C
FOD
= 33 nF (Note 3)
ms
V
V
IN(ON)
V
IN(OFF)
R
TH
Applied between IN – COM
–
0.8
–
V
at T
TH
= 25°C (Note 4, Figure 5)
at T
TH
= 100°C (Note 4, Figure 5)
–
50
2.99
k
k
–
–
Notes:
-6
3. The
fault-out pulse width t
depends on the capacitance value of C
according to the following approximate equation : C
= 18.3 x 10
x t
[F]
FOD
FOD
FOD
FOD
4. T
is the temperature of know case temperature(T
), please make the experiment considering your application.
C
TH
R-T Graph
120
100
80
60
40
20
0
20 30 40 50 60 70 80 90
100 110 120 130
Temperature [
C]
Figure 5. R-T Curve of the Built-In Thermistor
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
6
Recommended Operating Condition
Symbol
V
i
Item
Condition
Min. Typ. Max.
Unit
V
rms
Input Supply Voltage
Output Voltage
Applied between R – S
187
220
380
253
400
16.5
1
V
PN
Applied between P – N
–
13.5
-1
–
V
V
V
CC
Control Supply Voltage
Control Supply Variation
PWM Input Frequency
Allowable Input Current
Applied between V
CC(L)
– COM
15.0
–
dV
CC
/dt
f
PWM
I
i
V/
s
kHz
A
peak
T
J
150°C
20
–
–
T
C
< 90°C, V
i
= 220 V, V
PN
= 380 V
V
PWM
= 20 kHz
–
30
Mechanical Characteristics and Ratings
Item
Mounting
T
o
rque
Device Flatness
Weight
Condition
Min.
Typ. Max.
Unit
N•m
m
Mounting Screw: M3
See Figure 6
Recommended 0.62 N•m
0.51
0.62
–
0.72
+120
–
0
–
15.00
g
(+)
(+)
(+)
Figure 6. Flatness Measurement Position
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
7
Time Charts of Protective Function
Input Signal
Internal IGBT
Gate-Emitter Voltage
P3
P2
UV
reset
P5
Control Supply Voltage
UV
detect
P6
P1
Output Current
P4
Fault Output Signal
P1 : Normal operation: IGBT ON and conducting current
P2 : Under-voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under-voltage reset
P6 : Normal operation: IGBT ON and conducting current
Figure 7. Under-Voltage Protection
P 5
In p u t
S ig n a l
P 6
In te rn a l
IG B T
G a te -E m itte r
V o lta g e
O C
D e
t
e ctio n
P 1
P 4
P 7
O u tp u t
C u rre n t
P 2
O C
R e
f
e re n ce
V o lta g e
(0 .5 V )
S e n
s
in g
V o lta g e
R C
F ilte r
D e la y
P 3
P 8
F a u lt
O u tp u t
S ig n a l
P1 : Normal operation: IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signa:
but IGBT cannot be turned on during the fault output activation
P7 : IGBT OFF state
P8 : Fault output reset and normal operation start
Figure 8. Over-Current Protection
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
8
+5 V
VTH
RTH
NTC
Thermistor
P
L
+5 V
CSC
CFOD
VFO
CSC
PR
CFOD
VFO
PFC
R
S
Controller
OUT
V
AC
IN
IN
COM
VCC
COM
VCC
+15 V
N
NR
Figure 9. Application Example
Notes:
®
5. Each capacitors should be located as close to PFC SPM
product pins as possible.
6. It’s recommended that anti-parallel diode should be connected with IGBT.
©2010 Fairchild Semiconductor Corporation
FPAB30BH60 Rev. C4
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Rev. I77
© Fairchild Semiconductor Corporation
