onsemi-FPAB30BH60

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onsemi-FPAB30BH60
December 2013  
FPAB30BH60  
PFC SPM

®

3 Series for Single-Phase Boost PFC  
Features  
• UL
 
Certified No. E209204 (UL1557)  
General Description  
The FPAB30BH60 is a PFC SPM

®

3 module providing a  
fully-featured, high-performance Boost PFC (Power  
Factor Correction) input power stage for consumer,  
medical, and industrial applications. These
 
modules  
integrate optimized
 
gate drive of the
 
built-in IGBT to  
• 600
 
V – 30 A Single-Phase Boost PFC with Integral  
Gate Driver and Protection  
• Very Low Thermal Resistance Using Al

2

O

3

DBC  
Substrate  
minimize  
EMI  
and  
losses,  
while  
also  
• Full-Wave Bridge Rectifier and High-Performance  
Output Diode  
providing multiple on-module  
protection  
features  
including under-voltage lockout, over-current shutdown,  
thermal monitoring, and fault reporting. These modules  
also feature a full-wave rectifier, and high-performance  
output diode for additional space savings and mounting  
convenience  
• Built-in
 
NTC Thermistor for Temperature Monitoring  
• Optimized
 
for 20kHz Switching Frequency  
• Isolation
 
Rating: 2500 Vrms/min.  
Applications  
• Single-Phase
 
Boost PFC Converter  
Related Source  
•
AN-9090 – PFC SPM 3 Series User’s Guide  
•
AN-9091 – Boost PFC Inductor Design Guide  
Figure 1. Package Overview  
Package Marking & Ordering Information  
Device  
Device Marking  
Package  
Packing Type  
Quantity  
FPAB30BH60  
FPAB30BH60  
SPMIA-027  
Rail  
10  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
1

Integrated Power Functions  
•
PFC converter for single-phase AC / DC power conversion (please refer to Figure 3)  
Integrated Drive, Protection, and System Control Functions  
•
•
•
•
For IGB
T
s
: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection  
Fault signal: corresponding to OC and UV fault  
Built-in thermistor: temperature monitoring  
Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input  
Pin Configuration  
Top View  
12.205  
CC  
(1)V  
(21)P  
(2)COM  
(3)COM  
(4)COM  
(5)IN  
(22)P  
FO  
(6)V  
(7)C  
(23)N.C  
FOD  
SC  
(8)C  
TH  
(9)R  
(10)V  
(24)L  
(25)PR  
(26)R  
(27)S  
C
Case Temperature (T )  
TH  
Detecting Point  
(11)N.C  
(12)N.C  
(13)N  
(14)N  
(15)N  
(16)N  
(17)NR  
(18)NR  
DBC Substrate  
(19)NR  
(20)NR  
Figure 2. Top View  
Notes :  
1. For the measurement point of case temperature(T
 
), please refer to Figure 2.  
C
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
2

Pin Descriptions  
Pin Number  
Pin Name  
Pin Description  
1
2,3,4  
5
V

CC  

COM  
IN  
Common Bias Voltage for IC and IGBT Driving  
Common Supply Ground  
Signal Input for IGBT  
6
V

FO  

C

FOD  

C

SC  

R

(TH)  

V

(TH)  

N.C  
N
Fault Output  
7
Capacitor for Fault Output Duration Selection  
Capacitor (Low-Pass Filter) for Over-Current Detection  
Series Resistor for The Use of Thermistor  
Thermistor Bias Voltage  
No Connection*  
8
9
10  
11,12  
13~16  
17~20  
21,22  
23  
IGBT Emitter  
N

R  

Negative DC-Link of Rectifier  
Positive Rail of DC-Link  
No Connection  
P
N.C  
L
24  
Reactor Connection Pin  
Positive DC-Link of Rectifier  
AC Input for R-Phase  
25  
P

R  

26  
R
27  
S
AC Input for S-Phase  
* 11th and 12th pins are cut. Please refer to package outline drawings for more detail.  
Internal Equivalent Circuit and Input/Output Pins  
(10) VTH  
NTC  
(21,22) P  
(24) L  
Thermistor  
(9) RTH  
(8) CSC  
CSC  
(7) CFOD  
CFOD  
(6) VFO  
VFO  
(25) PR  
(5) IN  
IN  
OUT  
(26) R  
(27) S  
(2~4) COM  
COM  
(1) VCC  
VCC  
(13~16) N  
(17~20) NR  
Figure 3. Internal Block Diagram  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
3

Absolute Maximum Ratings
(T

J

= 25°C,
 
unless otherwise specified.)  
Converter Part  
Symbol  
V

i  

Item  
Condition  
Rating  
264  
500  
450  
500  
600  
250  
25  
Unit  
V

rms  

V
Supply Voltage  
Applied between R – S  
V

i(Surge)  

V

PN  

Supply Voltage (Surge)  
Output Voltage  
Applied between R – S  
Applied between P – N  
Applied between P – N  
V
V

PN(Surge)  

V

CES  

I

FSM  

Output Voltage (Surge)  
Collector – Emitter Voltage  
Peak Forward Surge Current  
Input Current (100% Load)  
Input Current (125% Load)  
V
V
Single Half Sine-Wave  
A
I

i  

T

C

< 95°C, V

i

= 220 V, V

PN

= 390 V,
 
V

PWM

= 20 kHz  
A
I

i(125%)  

T

C

< 95°C, V

i

= 220 V, V

PN

= 390 V,
 
V

PWM

= 20 kHz,  
1 Minite Non-Repetitive  
30  
A
P

C  

T

J  

Collector Dissipation  
T

C

= 25°C  
169  
W
Operating Junction
T
e
mperature  
-20 ~ 150  
°C  
Notes:  
®
1.The maximum junction temperature rating of the power chips integrated within the PFC SPM
 
product is 150
C(@T
100
C). However, to insure safe operation of the PFC  
C
SPM product, the average junction temperature should be limited to
 
T  
125
C (@T
 
100
C)  
J(ave)  
C
Control Part  
Symbol  
V

CC  

Item  
Control Supply Voltage  
Input Signal Voltage  
Condition  
Rating  
20  
Unit  
V
Applied between V

CC

– COM  
Applied between IN – COM  
Applied between V

FO

– COM  
Sink Current at V

FO

Pin  
V

IN  

-0.3 ~ V

CC

+0.3  
-0.3 ~ V

CC

+0.3  
5
V
V

FO  

Fault Output Supply Voltage  
Fault Output Current  
V
I

FO  

mA  
V
V

SC  

Current Sensing Input Voltage  
Applied between C

SC

– COM  
-0.3 ~ V

CC

+0.3  
Total System  
Symbol  
Item  
Condition  
Rating  
-20 ~ 100  
-40 ~ 125  
2500  
Unit  
°C  
T

C  

Module Case Operating
T
e
mperature  
Storage
T
e
mperature  
T

STG  

V

ISO  

°C  
Isolation Voltage  
60 Hz, Sinusoidal, AC 1 Minute, Connect Pins  
to Heat Sink Plate  
V

rms  

Thermal Resistance  
Symbol  
Item  
Condition  
Min. Typ. Max. Unit  
R
Junction to Case Thermal Resistance
 
IGBT  
FRD  
–
–
–
–
–
–
0.74  
1.44  
2.07  
°C/W  
°C/W  
°C/W  
(j-c)Q  
R
R
(j-c)F  
Rectifier (per 1 / 4 module)  
(j-c)R  
Notes:  
2. For the measurement point of case temperature(T
 
), please refer to Figure 2.  
C
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
4

Electrical Characteristics
(T

J

= 25°C, Unless Otherwise Specified.)  
Converter Part  
Symbol  
V

CE(SAT)  

V

FF  

Item  
Condition  
V

CC

= 15 V, V

IN

= 5 V, I

C

= 30 A  
I

F

= 30 A  
Min. Typ. Max.
 
Unit  
IGBT Saturation Voltage  
FRD Forward Voltage  
Rectifier Forward Voltage  
Switching Times  
–
–
–
–
–
–
–
–
–
–
2.0  
1.8  
1.2  
650  
400  
620  
200  
60  
2.8  
V
V
2.5  
V

FR  

I

F

= 30 A  
1.5  
V
t

ON  

V

PN

= 400 V, V

CC

= 15V, I

C

= 30 A  
–
ns  
ns  
ns  
ns  
ns  
A
V

IN

= 0 V
5
V
,
I
nductive Load  
t

C(ON)  

t

OFF  

t

C(OFF)  

t

rr  

–
(Note 3)  
–
–
–
–
I

rr  

3.5  
–
I

CES  

Collector – Emitter  
Leakage Current  
V

CE

= V

CES  

250  
A  
Notes:  
3.  
t
and t  
include the propagation delay time of the internal drive IC. t  
and t
 
are the switching time of IGBT itself under the given gate driving condition internally.  
C(OFF)  
ON  
OFF  
C(ON)  
For the detailed information, please see Figure 4.  
I

rr  

120
%
o
f I

C  

100
%
o
f I

C  

V

C
E  

I

C  

90% of I

C  

15% of V

C
E  

10
%
o
f I

C  

15
%
o
f V

C
E  

10
%
o
f I

C  

I

C  

V

C
E  

V
V
IN  
IN  
t

O
N  

t

rr  

t

C
(ON)  

t

C
(
O
FF)  

t

O
FF  

(a) Turn-on  
(b) Turn-off  
Figure 4. Switching Time Definition  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
5

Control Part  
Symbol  
I

QCCL  

Item  
Condition  
Min. Typ.
 
Max. Unit  
Quiescent V

CC

Supply Current
 
V

CC

= 15 V, IN = 0 V
 
V

CC

– COM  
–
4.5  
–
–
–
26  
–
mA  
V
V

FOH  

Fault Output Voltage  
V

SC

= 0 V, V

FO

Circuit: 4.7 k
to 5 V Pull-up  
V

SC

= 1 V, V

FO

Circuit: 4.7 k
to 5 V Pull-up  
V

CC

= 15 V  
V

FOL  

–
0.8  
0.55  
13.0  
13.2  
2.0  
–
V
V

SC(ref)  

UV

CCD  

UV

CCR  

t

FOD  

Over-Current Trip Level  
0.45  
10.7  
11.2  
1.4  
2.8  
–
0.5  
11.9  
12.4  
1.8  
–
V
Supply Circuit Under-Voltage  
Protection  
Detection Level  
V
Reset Level  
V
Fault-Out Pulse Width  
ON Threshold Voltage  
OFF Threshold Voltage  
Resistance of Thermistor  
C

FOD

= 33 nF (Note 3)  
ms  
V
V

IN(ON)  

V

IN(OFF)  

R

TH  

Applied between IN – COM  
–
0.8  
–
V
at T

TH

= 25°C (Note 4, Figure 5)  
at T

TH

= 100°C (Note 4, Figure 5)  
–
50  
2.99  
k
  
k
  
–
–
Notes:  
-6  
3. The
 
fault-out pulse width t  
depends on the capacitance value of C  
according to the following approximate equation : C  
= 18.3 x 10
 
x t  
[F]  
FOD  
FOD  
FOD  
FOD  
4. T  
is the temperature of know case temperature(T
 
), please make the experiment considering your application.  
C
TH  
R-T Graph  
120  
100  
80  
60  
40  
20  
0
20 30 40 50 60 70 80 90
 
100 110 120 130  
Temperature [
C]  
Figure 5. R-T Curve of the Built-In Thermistor  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
6

Recommended Operating Condition  
Symbol  
V

i  

Item  
Condition  
Min. Typ. Max.
 
Unit  
V

rms  

Input Supply Voltage  
Output Voltage  
Applied between R – S  
187  
220  
380  
253  
400  
16.5  
1
V

PN  

Applied between P – N  
–
13.5  
-1  
–
V
V
V

CC  

Control Supply Voltage  
Control Supply Variation  
PWM Input Frequency  
Allowable Input Current  
Applied between V

CC(L)

– COM  
15.0  
–
dV

CC

/dt  
f

PWM  

I

i  

V/
s  
kHz  
A

peak  

T

J


150°C  
20  
–
–
T

C

< 90°C, V

i

= 220 V, V

PN

= 380 V  
V

PWM

= 20 kHz  
–
30  
Mechanical Characteristics and Ratings  
Item  
Mounting
T
o
rque  
Device Flatness  
Weight  
Condition  
Min.  
Typ. Max.  
Unit  
N•m  
m  
Mounting Screw: M3  
See Figure 6  
Recommended 0.62 N•m  
0.51  
0.62  
–
0.72  
+120  
–
0
–
15.00  
g
(+)  
(+)  
(+)  
Figure 6. Flatness Measurement Position  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
7

Time Charts of Protective Function  
Input Signal  
Internal IGBT  
Gate-Emitter Voltage  
P3  
P2  
UV  
reset  
P5  
Control Supply Voltage  
UV  
detect  
P6  
P1  
Output Current  
P4  
Fault Output Signal  
P1 : Normal operation: IGBT ON and conducting current  
P2 : Under-voltage detection  
P3 : IGBT gate interrupt  
P4 : Fault signal generation  
P5 : Under-voltage reset  
P6 : Normal operation: IGBT ON and conducting current  
Figure 7. Under-Voltage Protection  
P 5  
In p u t
 
S ig n a l  
P 6  
In te rn a l
 
IG B T  
G a te -E m itte r
 
V o lta g e  
O C
 
D e
t
e ctio n  
P 1  
P 4  
P 7  
O u tp u t
 
C u rre n t  
P 2  
O C
 
R e
f
e re n ce  
V o lta g e
 
(0 .5 V )  
S e n
s
in g
 
V o lta g e  
R C
 
F ilte r
 
D e la y  
P 3  
P 8  
F a u lt
 
O u tp u t
 
S ig n a l  
P1 : Normal operation: IGBT ON and conducting current  
P2 : Over current detection  
P3 : IGBT gate interrupt / fault signal generation  
P4 : IGBT is slowly turned off  
P5 : IGBT OFF signal  
P6 : IGBT ON signa:
 
but IGBT cannot be turned on during the fault output activation  
P7 : IGBT OFF state  
P8 : Fault output reset and normal operation start  
Figure 8. Over-Current Protection  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
8

+5 V  
VTH  
RTH  
NTC  
Thermistor  
P
L
+5 V  
CSC  
CFOD  
VFO  
CSC  
PR  
CFOD  
VFO  
PFC  
R
S
Controller  
OUT  
V

AC  

IN  
IN  
COM  
VCC  
COM  
VCC  
+15 V  
N
NR  
Figure 9. Application Example  
Notes:  
®
5. Each capacitors should be located as close to PFC SPM
 
product pins as possible.  
6. It’s recommended that anti-parallel diode should be connected with IGBT.  
©2010 Fairchild Semiconductor Corporation  
FPAB30BH60 Rev. C4  
9

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®  

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®  

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  
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®  

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  
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  
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  
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max
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®  

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®  

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  
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®  

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  
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  
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  
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  
®
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®

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®  

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®  

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®  

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®  

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  
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  
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  
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  
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  
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  
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®

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  
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®  

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®
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®  

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®  

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®  

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®  

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®  

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®  

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®  

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®  

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®  

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®  

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®  

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®  

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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change  
in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
Preliminary  
No Identification Needed  
Obsolete  
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve the design.  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I77  
© Fairchild Semiconductor Corporation