onsemi-FPDB50PH60
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December 2013
FPDB50PH60
PFC SPM
®
3 Series for 2-Phase Bridgeless PFC
Features
• UL
Certified No. E209204 (UL1557)
General Description
The FPDB50PH60 is a PFC SPM
®
3 module providing a
fully-featured, high-performance Bridgeless PFC (Power
Factor Correction) input power stage for consumer,
medical, and industrial applications. These modules
integrate optimized
gate drive of the
built-in IGBTs to
• 600
V – 50 A 2-Phase Bridgeless PFC with Integral
Gate Driver and Protection
• Very Low Thermal Resistance Using
AlN DBC
Substrate
minimize
EMI
and
losses,
while
also
• Built-in
NTC Thermistor for
T
e
mperature Monitoring
• Built-in
Shunt Resistor for Current Sensing
• Optimized
for 20kHz Switching Frequency
• Isolation
Rating: 2500 Vrms/min.
providing multiple on-module
protection
features
including under-voltage lockout, over-current shutdown,
thermal monitoring, and fault reporting. These modules
also feature high-performance output diodes and shunt
resistor for additional space savings and mounting
convenience.
Applications
• 2-Phase
Bridgeless PFC Converter
Related Source
•
AN-9041 – Bridgeless PFC SPM 3 Series Design
Guide
Figure 1. Package Overview
Package Marking & Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FPDB50PH60
FPDB50PH60
SPMHA-027
Rail
10
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
1
Integrated Power Functions
•
PFC converter for single-phase AC / DC power conversion.(please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
•
•
•
•
For IGB
T
s
: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
Fault signal: corresponding to OC and UV fault
Built-in thermistor: temperature monitoring
Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
(1) V
CC(L)
(2) COM
(3) NC
(21) V
AC-
(4) IN
(R)
(5) IN
(S)
(6) V
FO
(7) C
FOD
(8) C
SC
(22) N
SENSE
(23) NC
(9) NC
(24) N
(25) R
(26) S
(27) P
R
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(15) NC
(16) NC
(17) NC
(18) NC
(19) R
TH
Case Temperature (
T
C
)
Detecting Point
DBC Substrate
(20) V
TH
Figure 2. Top View
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
2
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
V
CC
COM
IN
(R)
IN
(S)
V
FO
C
FOD
C
SC
R
(TH)
V
(TH)
V
AC-
N
SENSE
N
Common Bias Voltage for IC and IGB
T
s
D
riving
2
Common Supply Ground
4
Signal Input for Low-Side R-Phase IGBT
Signal Input for Low-Side S-Phase IGBT
Fault Output
5
6
7
Capacitor for Fault Output Duration Selection
Capacitor(Low-Pass Filter) for Over-Current Detection
Series Resistor for The Use of Thermistor
Thermistor Bias Voltage
8
19
20
21
Current Sensing
T
e
rminal
22
Current Sensing Reference
T
e
rminal
Negative Rail of DC-Link
24
25
26
R
Output for R-Phase
S
Output for S-Phase
27
P
R
Positive Rail of DC-Link
3, 9~18, 23
NC
No Connection
Internal Equivalent Circuit
(20) V
TH
NTC
Thermistor
(19) R
TH
(27) P
R
D1
D2
(8) C
SC
(7) C
FOD
(6) V
FO
CSC
(26) S
(25) R
CFOD
VFO
Q1
D3
Q2
D4
OUT(S)
OUT(R)
(5) IN
(S)
(4) IN
(R)
IN(S)
IN(R)
(24) N
(23) NC
(22) N
SENSE
(21) V
AC-
Shunt
Resistor
(2) COM
(1) VCC
COM
VCC
Figure 3. Internal Block Diagram
Notes:
1. Converter is composed of two IGB
T
s
i
ncluding four diodes and one IC which has gate driving and protection functions.
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
3
Absolute Maximum Ratings
(T
J
= 25°C,
unless otherwise specified.)
Converter Part
Symbol
V
i
Item
Condition
Rating
264
Unit
V
rms
V
Supply Voltage
Applied between R – S
V
i(Surge)
V
PN
V
PN(Surge)
V
CES
Supply Voltage (Surge)
Output Voltage
Applied between R – S
Applied between P – N
Applied between P – N
500
450
V
Output Voltage (Surge)
Collector – Emitter Voltage
Input Current (100% Load)
500
V
600
V
I
i
T
C
< 95°C, V
i
= 220 V, V
PN
= 390
V
,
30
A
V
PWM
= 20 kHz
I
i(125%)
Input Current (125% Load)
T
C
< 95°C, V
i
= 220V , V
PN
= 390 V,
37.5
A
V
PWM
= 20 kHz, 1 min Non-Repetitive
P
C
P
RSH
T
J
Collector Dissipation
T
C
= 25°C per IGBT
T
C
< 125°C
143
2
W
W
°C
Power Rating of Shunt Resistor
Operating Junction
T
e
mperature
(Note 2)
-20 ~ 125
Notes:
®
2. The maximum junction temperature rating of the power chips integrated within the PFC SPM
product is 150
C(@T
100
C). However, to insure safe operation of the PFC
C
SPM product, the average junction temperature should be limited to
T
125
C (@T
100
C)
J(ave)
C
Control Part
Symbol
V
CC
Item
Condition
Rating
20
Unit
Control Supply Voltage
Applied between V
CC
– COM
Applied between IN – COM
V
V
V
IN
Input Signal Voltage
-0.3 ~ 17.0
V
FO
I
FO
Fault Output Supply Voltage
Fault Output Current
Applied between V
FO
– COM
Sink Current at V
FO
Pin
-0.3 ~ V
CC
+0.3
5
V
mA
V
V
SC
Current Sensing Input Voltage
Applied between C
SC
– COM
-0.3~V
CC
+0.3
Total System
Symbol
Item
Condition
Rating
-20 ~ 100
-40 ~ 125
2500
Unit
°C
T
C
Module Case Operation
T
e
mperature
Storage
T
e
mperature
T
STG
V
ISO
°C
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate
V
rms
Thermal Resistance
Symbol
Item
Condition
Min. Typ. Max.
Unit
R
Junction to Case Thermal Resistance
(Referenced to PKG Center)
IGBT
–
–
–
–
–
–
0.7
1.5
°C/W
°C/W
°C/W
(j-c)Q
R
High-Side Diode
Low-Side Diode
(j-c)HD
R
0.85
(j-c)LD
Notes :
3. For
the measurement point of case temperature(T
), please refer to Figure 2.
C
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
4
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified.)
Converter Part
Symbol
V
CE(SAT)
V
FH
Item
Condition
Min. Typ. Max.
Unit
IGBT Saturation Voltage
V
CC
= 15
V
,
V
IN
= 5
V
,
I
C
= 50 A
High-Side Diode Voltage
I
F
= 50 A
–
2.8
2.1
1.3
550
200
430
180
60
3.2
V
V
–
2.7
V
FL
Low-Side Diode Voltage
Switching Times
I
F
= 50 A
–
1.7
V
t
ON
V
PN
= 400
V
,
V
CC
= 15 V, I
C
= 50 A
IN
= 0 V
5 V, Inductive Load
–
–
ns
ns
ns
ns
ns
A
V
t
C(ON)
t
OFF
t
C(OFF)
t
rr
–
–
(Note 4)
–
–
–
–
–
–
–
I
rr
6
–
R
SENSE
I
CES
Current-Sensing Resistor
1.8
–
2.0
–
2.2
250
m
A
Collector – Emitter
Leakage Current
V
CE
= V
CES
Notes:
4.
t
and t
include the propagation delay of the internal drive IC. t
and t
are the switching time of IGBT itself under the given gate driving condition internally. For
C(OFF)
ON
OFF
C(ON)
the detailed information, please see Figure 4.
I
rr
120
%
o
f I
C
10
%
o
f V
100
%
o
f I
C
V
CE
I
C
90
%
o
f I
C
10
%
o
f I
C
CE
10
%
o
f V
CE
10
%
o
f I
C
I
C
V
CE
V
IN
V
IN
t
O
N
t
rr
t
C
(
O
FF)
t
C
(ON)
t
O
FF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
5
Control Part
Symbol
I
QCCL
Item
Condition
Min. Typ. Max. Unit
Quiescent V
CC
Supply Current
V
CC
= 15
V
,
I
N = 0 V
V
CC
– COM
–
4.5
–
–
–
26
–
mA
V
V
FOH
Fault Output Voltage
V
SC
= 0 V, V
FO
Circuit: 4.7 k
to 5 V Pull-up
V
SC
= 1 V, V
FO
Circuit: 4.7 k
to 5 V Pull-up
V
CC
= 15 V
V
FOL
–
0.8
0.55
13.0
13.2
2.0
–
V
V
SC(ref)
UV
CCD
UV
CCR
t
FOD
Over-Current Trip Level
0.45
10.7
11.2
1.4
3.0
–
0.50
11.9
12.4
1.8
–
V
Supply Circuit Under-Voltage
Protection
Detection Level
V
Reset Level
V
Fault-Out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
C
FOD
= 33 nF (Note 5)
ms
V
V
IN(ON)
V
IN(OFF)
R
TH
Applied between IN – COM
–
0.8
–
V
at T
C
= 25°C (See Figure 5)
at T
C
= 80°C (See Figure 5)
–
50
5.76
k
k
–
–
Notes:
5. The
fault-out pulse width t
FOD
depends on the capacitance value of C
FOD
according to the following approximate equation : C
FOD
= 18.3 x 10
-6
x t
FOD
[F]
R-T Graph
120
100
80
60
40
20
0
20 30 40 50 60 70 80 90
100 110 120 130
Temperature [
C]
Figure 5. R-T Curve of the Built-in Thermistor
Recommended Operating conditions
Symbol
V
I
Item
Condition
Min.
180
–
Typ. Max.
Unit
Input Supply Voltage
Output Voltage
Applied between R – S
–
280
15.0
–
264
400
16.5
1
V
rms
V
V
PN
Applied between P – N
V
CC
Control Supply Voltage
Control Supply Variation
PWM Input Signal
Applied between V
CC
– COM
Applied between IN – COM
T
C
100°C, T
J
125°C, per IGBT
13.5
-1
V
dV
CC
/dt
f
PWM
V/
s
kHz
–
20
–
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
6
Mechanical Characteristics and Ratings
Item
Mounting
T
o
rque
Device Flatness
Weight
Condition
Min.
Typ. Max.
Units
Mounting Screw: M3
See Figure 6
Recommended 0.62 N•m
0.51
0.62
–
0.72
+120
–
N•m
m
g
0
–
15.00
(+)
(+)
(+)
Figure 6. Flatness Measurement Position
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
7
Time Charts of Protective Function
Input Signal
Internal IGBT
Gate-Emitter Voltage
P3
P2
UV
reset
P5
Control Supply Voltage
UV
detect
P6
P1
Output Current
P4
Fault Output Signal
P1 : Normal operation: IGBT ON and conducting current.
P2 : Under-voltage detection.
P3 : IGBT gate interrupt.
P4 : Fault signal generation.
P5 : Under-voltage reset.
P6 : Normal operation: IGBT ON and conducting current.
Figure 7. Under-Voltage Protection
P 5
Input S
ignal
P 6
Internal IG
B T
G
a
te-E m itter
V oltage
O C
D
e
tection
P 1
P 4
P 7
O
u
tput
C urrent
P 2
O C
R
e
ference
V
o
ltage
(0.5V )
S
e
nsing
V oltage
R C
F
i
lter D
elay
P 3
P 8
Fault O
utput S
ignal
P1 : Normal operation: IGBT ON and conducting current.
P2 : Over current detection.
P3 : IGBT gate interrupt / fault signal generation.
P4 : IGBT is slowly turned off.
P5 : IGBT OFF signal.
P6 : IGBT ON signal: but IGBT cannot be turned on during the fault output activation.
P7 : IGBT OFF state.
P8 : Fault output reset and normal operation start.
Figure 8. Over-Current Protection
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
8
V
ac
+5 V
V
TH
NTC
Thermistor
R
P
R
TH
C
S
R
SC
CSC
C
FOD
MCU
or
CFOD
VFO
3-Phase
Inverter
V
FO
IN
OUT(S)
OUT(R)
(S)
IN(S)
IN(R)
IN
(R)
Controller
N
COM
VCC
N
S
ENSE
Shunt
Resistor
COM
VCC
V
AC-
Figure 9. Application Example
Notes:
6. For the over-current protection, please set time constant in the range
3 ~ 4
s.
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
9
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2005 Fairchild Semiconductor Corporation
FPDB50PH60 Rev. C3
10
