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July. 2014
FPF1C2P5BF07A
F1 Module solution for PV-Application
General Description
Fairchild’s brand-new DC-DC module is designed for a power
stage that needs more compact design. And the Press-fit techn-
ology provides simple and reliable mounting. This module is op-
timized for the application such as solar inverter where a high
efficiency and robust design are needed.
Electrical Features
•
•
•
•
•
High Efficiency
Package Code: F1
Low Conduction and Switching losses
Low R
DS(ON)
: 90
m
Ω
max.
Fast Recovery Body Diode
Built-in NTC for temperature monitoring
Mechanical Features
•
Compact size : F1 Package
•
Press-fit contact technology
Applications
•
Solar Inverter
Certification
•
UL approved (E209204)
Internal Circuit Diagram
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Symbol Description
Rating
650
Units
V
V
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
± 20
36
A
@ T
C
= 25°C
27
A
@ T
C
= 80°C
156
A
I
DM
I
S
Pulsed Drain Current
Limited by T
J
max.
36
A
Continuous Source-Drain Forward Current
Maximum Pulsed Source-Drain Forward Current
Maximum Power Dissipation
156
A
I
SM
P
D
T
J
250
W
°C
@ T
C
= 25°C
-40 to +150
Operating Junction
T
e
mperature
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
1
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted. (Continued)
Symbol
Rating
Units
Description
Module
T
STG
Storage
T
e
mperature
Isolation Voltage
-40 to +125
2500
Al
2
O
3
20 to 50
22
°C
V
V
ISO
@ AC 1
MIN
Iso._Material Internal
Isolation Material
F
MOUNT
Weight
Mounting Force per Clamp
N
Typ.
g
Creepage
T
e
rminal to Heatshink
T
e
rminal to
T
e
rminal
T
e
rminal to Heatshink
T
e
rminal to
T
e
rminal
11.5
mm
mm
mm
mm
6.3
Clearance
10.0
5.0
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity / Tray
FPF1C2P5BF07A
FPF1C2P5BF07A
F1
Tray
22
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
2
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Off Characteristics
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
V
GS
= 0
V
,
I
D
= 1 mA
650
–
–
–
–
V
V
DS
= 650
V
, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
–
–
25
2.5
μ
A
μ
A
I
GSS
On Characteristics
V
GS(th)
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
–
–
–
–
3.8
–
–
90
–
V
R
DS(ON)
I
D
= 27 A, V
GS
= 10 V
m
Ω
m
Ω
m
Ω
I
D
= 27 A, V
GS
= 10 V @T
C
= 125°C
135
76
I
D
= 47 A, V
GS
= 10 V
–
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
V
CC
= 380 V
D
= 27A
GS
= 10 V
–
–
–
–
–
–
–
–
–
–
–
–
–
192
75
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
mJ
μ
J
ns
ns
ns
ns
mJ
μ
J
nC
I
V
Rise Time
Turn-Off Delay Time
Fall Time
140
13
R
R
G(ON)
= 51
Ω
G(OFF)
= 3
Ω
Inductive Load
E
ON
E
OFF
t
d(on)
t
r
Turn-On Switching Loss per Pulse
Turn-Off Switching Loss per Pulse
Turn-On Delay Time
Rise Time
2.29
58
T
C
= 25 °C
V
CC
= 380 V
D
= 27 A
GS
= 10 V
159
82
I
V
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
156
13
R
R
G(ON)
= 51
Ω
G(OFF)
= 3
Ω
Inductive Load
E
ON
E
OFF
Q
g(total)
Turn-On Switching Loss per Pulse
Turn-Off Switching Loss per Pulse
T
o
tal Gate Charge
4.06
65
T
C
= 125 °C
V
DS
= 380
V
, V
GS
= 0V…+10 V,
D
= 27 A
155
I
R
θ
JC
Thermal Resistance of Junction to Case
per Chip
–
–
0.5
°C/W
Switching Characteristics : Body Diode
V
SD
Source-Drain Diode Forward Voltage
I
SD
= 27 A, V
GS
= 0 V
–
–
–
–
–
–
–
–
–
1.5
–
V
V
I
SD
= 47 A, V
GS
= 0 V
1.3
t
rr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
I
SD
= 27 A
dI
F
/dt =
364 A/
μ
s
109
39
ns
A
I
rr
–
–
Q
rr
t
rr
2000
179
55
nC
ns
A
I
SD
= 27A
dI
F
/dt = 320 A/
μ
s @T
C
= 125°C
I
rr
–
–
Q
rr
4802
nC
NTC
R
NTC
Rated Resistance
T
C
= 25°C
–
–
10
936
–
–
–
k
Ω
Ω
T
C
= 100°C
T
o
lerance
T
C
= 25°C
T
C
= 25°C
B
25/50
-3
–
+3
20
–
%
P
D
Power Dissipation
B-Constance
–
mW
K
B
Value
–
3450
3513
B
25/100
–
–
K
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
3
Typical Performance Characteristic
Fig 1. On-Region Characteristics
Fig 2. On-Resistance Variation
vs. Drain Current and Gate Voltage
160
0.20
V
GS
= 10 V
V
GS
=
20 V
15 V
10 V
8 V
V
GS
= 20 V
140
120
100
80
0.16
6 V
0.12
0.08
0.04
60
40
20
* Note:
1. 250
μ
s pulse test
0
0
5
10
15
20
0
40
80
120
160
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage[V]
Fig 3. On-Resistance Variation vs. Temperature
Fig 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2.25
2.00
1.75
1.50
1.25
1.00
150
T
C
= 25
°
C
T
C
= 80
°
C
T
C
= 125
°
C
120
90
60
30
0
0.75
0.50
* Notes:
1. V
GS
= 10 V
2. I
D
= 27 A
-50 -25
0
25
50
75 100
125 150 175
0.3
0.6
0.9
1.2
1.5
1.8
2.1
T
C
, Case Temperature [°C]
V
SD
, Body Diode Forward Voltage [V]
Fig 5. Turn-Off Loss vs. Drain Current
Fig 6. Turn-On Loss vs. Drain Current
100
6
* Notes:
* Notes:
1. with an inductive load
1. with an inductive load
2. V
DS
= 380 V
5
T
= 125
°
C
2. V
DS
= 380 V
3. V
GS
= 10 V
4. R
g(on)
= 51
Ω
5. R
g(off)
= 3
Ω
C
T
= 125
°
C
80
60
40
20
0
C
3. V
GS
= 10 V
4. R
g(on)
= 51
Ω
5. R
g(off)
= 3
Ω
4
3
2
1
0
T
= 25
°
C
C
T
= 25
°
C
C
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I
D
, Drain Current
[
A
]
I
D
, Drain Current
[
A
]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
4
Typical Performance Characteristic
(Continued)
Fig 7. Turn-Off Loss
vs. Turn-Off Gate Resistor Values
Fig 8. Transient Thermal Response Curve
400
1
* Notes:
1. with an inductive load
0.5
T
= 125
°
C
= 25
°
C
2. V
DS
= 380 V, I
D
= 27 A
C
3. V
GS
= 10 V
0.3
0.1
300
0.1
4. R
g(on)
= 51
Ω
0.05
0.02
P
DM
200
0.01
1E-3
1E-4
T
C
0.01
t
1
t
2
0.005
Single Pulse
100
* Notes :
1. Z
θ
JC
(t) = 0.5
°
C/W Max.
2. Duty Factor, D = t
1
/t
2
3. T
J
– T
C
= P
DM
*Z
θ
JC
(t)
0
0
5
10
1
5
20
2
5 30
35
, Off Resistance
[
Ω
]
1E-5
1E-4
1E-3
0.01
0.1
1
R
t
1
, Rectangular Pulse Duration [sec]
g(off)
Fig 9. Typical NTC Value vs. Temperature
50
10
1
0.2
0
25
50
75
100
125
150
T
C
, Case Temperature
[°
C
]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
5
Internal Circuit Diagram
DC+
DC+
S5
G5
M2
M4
G2
S2
G4
S4
M5
OUT1
OUT1
OUT2
OUT2
OUT3
OUT3
M1
M3
T1
T2
G1
S1
G3
S3
RTN
RTN
Package Outlines [mm]
©2014 Fairchild Semiconductor Corporation
FPF1C2P5BF07A Rev. C2
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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