onsemi-FPN660A
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FPN660/FPN660A
PNP Low Saturation Transistor
•
These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
Sourced from process PA.
•
C
TO-226
B
E
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
A
Symbol
Parameter
FPN660
FPN660A
Units
V
V
Collector-Emitter Voltage
60
80
5
60
CEO
CBO
EBO
V
V
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
V
5
3
V
I
– Continuous
3
A
C
T , T
Operating and Storage Junction
T
e
mperature Range
-55 ~ +150
-55 ~ +150
°
C
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These
ratings are based on a maximum junction temperature of 150
°
C.
2) These
are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All
voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
T =25
°
C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
Off Characteristics
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
I
= 10mA, I
= 0
55
V
CEO
CBO
C
B
I
= 100
µ
A, I
= 0
FPN660
FPN660A
80
60
V
V
E
E
BV
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
= 100
µ
A, I
= 0
5.0
V
EBO
E
C
I
V
V
= 30
V
, I
= 0
100
10
nA
µ
A
CBO
CB
CB
E
= 30
V
, I
=
0
, T
= 100
°
C
E
A
I
Emitter-Base Cutoff Current
V
= 4.0
V
, I
= 0
100
nA
EBO
EB
C
On Characteristics *
h
DC Current Gain
I
I
= 100mA, V
= 2.0V
70
100
250
80
FE
C
C
CE
= 500mA, V
= 2.0V
FPN660
FPN660A
300
550
CE
I
I
= 1.0A, V
= 2.0V
CE
C
C
= 2.0A, V
= 2.0V
40
CE
V
(sat)
Collector-Emitter Saturation Voltage
I
I
= 1.0A, I
= 100mA
300
450
400
mV
mV
mV
CE
C
C
B
= 2.0A, I
= 200mA
FPN660
FPN660A
B
V
V
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
I
= 1.0A, I
= 100mA
1.25
1.0
V
V
BE
C
B
= 1.0A, V
= 2.0V
BE
C
CE
Small Signal Characteristics
C
Output Capacitance
Transition Frequency
V
= 10
V
, I
=
0
, f = 1MHz
45
pF
obo
CB
E
f
I
= 100mA, V
= 5.0
V
,
75
MHz
T
C
CE
f = 100MHz
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
NOTE:
All voltage (V) and currents (A) are negative polarity for PNP transistors.
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
Thermal Characteristics
T =25
°
C unless otherwise noted
A
Max.
Symbol
Parameter
Units
FPN660/FPN660A
P
T
o
tal Device Dissipation
1
W
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
50
°
C/W
°
C/W
θ
JC
θ
JA
125
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
Typical Characteristics
1.6
1.4
1.2
1
1.4
V
ce
= 2.0V
β =
10
1.2
1
– 40°C
– 40
°
C
0.8
0.8
0.6
0.4
25°C
0.6
25
°
C
1
2
5°C
0.4
1
2
5
°
C
0.2
0.2
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
– COLLECTOR CURRENT (A)
I
C
– COLLECTOR CURRENT (A)
Figure 2. Base-Emitter On Voltag
vs Collector Current
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Collector-Emitter Saturation
Input/Output Capacitance vs.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
350
300
250
200
150
100
50
f
=
1
.0
M
H
z
β =
10
C
obo
125
°
C
25
°
C
C
ibo
– 40
°
C
0
0.1
0.5
1
10 20
50 100
0.01
0.1
1
10
V
CE
– COLLECTOR VOLTAGE (V)
I
C
– COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Current Gain vs. Collector Current
1000
V
ce
= 2.0V
125
°
C
1
0
.
75
0.5
0
.
25
0
900
800
700
600
500
400
300
200
100
0
T
O
-226
25
°
C
– 40
°
C
0
25
50
75
1
0
0
125
1
5
0
0.0001
0.001
0.01
0.1
1
10
TE MPE RA
T
URE (
C)
°
I
C
– COLLECTOR CURRENT (A)
Figure 5. Current Gain vs Collector Current
Figure 6. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
Package Dimensions
TO-226
For leadformed option ordering,
refer to
T
a
pe & Reel data information.
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
