onsemi-FQA28N50-ON
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August 2014
FQA28N50
N-Channel QFET
MOSFET
®
500 V, 28.4 A, 160 m
Ω
Features
Description
•
28.4 A, 500 V, R
DS(on)
= 160 m
Ω
(Max.) @ V
GS
= 10 V, I
D
14.2 A
=
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switch mode power supply, power factor correction,
electronic lamp ballast based on half bridge.
•
•
•
•
Low Gate Charge (Typ. 110 nC)
Low Crss (Typ. 60 pF)
100% Avalanche Tested
RoHS compliant
D
G
G
D
TO-3PN
S
S
Absolute Maximum Ratings
T =
25°C unless otherwise noted.
C
Symbol
V
DSS
Parameter
FQA28N50
500
Unit
V
Drain-Source Voltage
I
D
– Continuous (T
C
= 25°C)
– Continuous (T
C
= 100°C)
– Pulsed
Drain Current
28.4
A
18
A
I
DM
(Note 1)
Drain Current
113.6
30
A
V
GSS
E
AS
I
AR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
1300
28.4
mJ
A
E
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
31
mJ
V/ns
W
dv/dt
P
D
4.5
310
– Derate above 25°C
2.5
W/°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering,
1/8
”
from Case for 5 Seconds
-55 to +150
300
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ.
—
Max.
0.4
—
Unit
°C
/
W
°C
/
W
°C
/
W
R
θ
JC
R
θ
CS
R
θ
JA
0.24
—
40
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA28N50
TO-3PN
Tube
N/A
N/A
30 units
FQA28N50
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
V
GS
= 0 V, I
D
= 250
μ
A
Drain-Source Breakdown Voltage
500
—
—
—
—
V
/
Breakdown Voltage
T
e
mperature Coeffi-
cient
I
D
= 250
μ
A, Referenced to 25°C
0.5
V/°C
I
DSS
V
DS
= 500 V, V
GS
= 0 V
—
—
—
—
—
—
—
—
1
μ
A
μ
A
nA
nA
Zero Gate Voltage Drain Current
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
10
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
Gate Threshold Voltage
3.0
—
—
0.126
28
5.0
0.16
—
V
Ω
S
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 14.2 A
g
FS
V
DS
= 50 V, I
D
= 14.2 A
Forward Transconductance
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
4300
640
60
5600
830
80
pF
pF
pF
V
DS
= 25 V, V
GS
= 0
V
,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
100
290
250
175
110
26
210
590
510
360
140
—
ns
ns
V
DD
= 250 V, I
D
= 28.4 A,
R
G
= 25
Ω
ns
(Note 4)
(Note 4)
ns
Q
g
nC
nC
nC
V
DS
= 400 V, I
D
= 28.4 A,
Q
gs
Q
gd
V
GS
= 10 V
52
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
—
—
—
—
—
—
—
28.4
113.6
1.4
—
A
A
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 28.4 A
GS
= 0 V, I
S
= 28.4 A,
Drain-Source Diode Forward Voltage
Reverse Recovery Time
—
V
V
440
5.7
ns
μ
C
dI
F
/ dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
—
Notes :
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 2.9 mH, I
= 28.4 A, V
= 50 V, R
= 25
Ω,
starting T =
25
°
C.
AS
DD
G
J
3. I
≤
28.4 A, di/dt
≤
200 A/
μ
s, V
≤
BV
starting T =
25
°
C.
SD
DD
DSS,
J
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
2
Typical Characteristics
10
2
10
1
10
0
10
2
V
To
p
:
1
5.0
G
V
S
10.
0
V
8.
0
V
7.
0
V
6.
5
V
6.
0
V
Botto
m
:
5
.
5
V
150
℃
25
℃
10
1
-55
℃
※
N
otes :
1. 250
μ
s
P
ulse Test
2. T
C
=
2
5
℃
※
N
otes :
1. V
D
S
=
5
0V
2. 250
μ
s
P
ulse Test
10
0
-1
10
-1
10
10
0
10
1
2
4
6
8
10
V
G
S
,
G
ate-Source Voltage
[V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
10
2
10
1
10
0
0.4
0.3
0.2
0.1
0.0
V
G
S
= 10V
V
G
S
= 20V
150
℃
25
℃
※
N
otes :
1. V
G
S
=
0
V
2. 250
μ
s
P
ulse Test
※
Note : T = 25
℃
J
-1
10
0
20
40
60
80
100
120
140
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current
[A]
V
S
D
,
S
ource-Drain Voltage
[V]
Figure 3. On-Resistance Variation
vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
9000
7500
6000
4500
3000
1500
0
12
10
8
C
iss
=
C
g
s
+
C
g
d
(C
d
s
=
s
horted)
C
oss
= C
+ C
gd
C
rss
= C
d
s
V
D
S
= 100V
V
D
S
= 250V
gd
V
D
S
=
4
00V
C
iss
C
oss
6
4
※
N
otes :
1. V
G
S
= 0 V
2. f
=
1
M
Hz
C
rss
2
※
Note : I
D
= 28.4 A
0
0
20
40
60
80
100
120
-1
10
10
0
10
1
Q
G
, Total Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate
Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
3
Typical Characteristics
(Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
N
o
t
e
s
:
0.9
0.8
1. V
= 0 V
2. I
D
G
=
S
2
50
μ
A
※
N
otes :
1. V
= 10 V
2. I
D
G
=
S
1
4.2 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
Operation in This Area
is Limited by R
D
S(on)
10
2
10
μ
s
100
μ
s
1
m
s
10 ms
10
1
DC
10
0
※
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-1
0
25
10
10
0
10
1
10
2
10
3
50
75
100
125
150
T
C
,
C
ase Temperature [
℃
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case
Temperature
D = 0
.
5
※
N o te s
1 .
Z
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
1 0
–
1
0 .2
=
0 .4
℃
/W M
a x.
3 .
T
J
M
–
T
C
=
P
D
* Z
θ
J
C
(
t)
M
0
.
1
0
.
0 5
0 .0 2
P
DM
1 0
–
2
t
1
0 .0 1
s in g le
p u ls e
t
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
ve P
u ls e
D u ra tio n
[s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
4
Figure 12. Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQA28N50 Rev. C0
6
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW
ISE SPECIFIED
A) THIS
PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION
AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW
ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD
SEMICONDUCTOR.
R0.50
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max
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
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Rev. I77
© Fairchild Semiconductor Corporation
