onsemi-FQA32N20C
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November
2013
FQA32N20C
N-Channel QFET
®
MOSFET
200 V, 32 A, 82 mΩ
Description
Features
•
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
32 A, 200 V, R
DS(on)
= 82
m
Ω
(Max.)
@ V
GS
= 10 V
,
I
D
= 16 A
•
•
•
Low
G
ate
C
harge (
T
yp
.
82.5 nC)
Low Crss (
T
yp
.
185 pF)
100%
A
valanche
T
ested
D
G
G
D
TO-3PN
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol Parameter
V
DSS
FQA32N20C
200
Unit
V
Drain-Source Voltage
I
D
– Continuous (T
C
= 25°C)
– Continuous (T
C
= 100°C)
– Pulsed
Drain Current
32
20.4
128
A
A
A
I
DM
(Note 1)
Drain Current
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
±
30
955
32
20.4
5.5
204
V
mJ
A
mJ
V/ns
W
(Note 2)
(Note 1)
(Note 1)
(Note 3)
– Derate above 25°C
1.63
-55 to +150
W/°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum
L
ead
T
emperature for
S
oldering,
1/8
”
from
C
ase for 5
S
econds
300
°C
Thermal Characteristics
FQA32N20C
Symbol
Parameter
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
, Max.
Thermal Resistance, Case-to-Sink
, Typ.
Thermal Resistance, Junction-to-Ambient
, Max.
°C
/
W
°C
/
W
°C
/
W
0.61
0.24
40
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
FQA32N20C
FQA32N20C
TO-3PN
N/A
30 units
Tube
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
V
GS
= 0 V, I
D
= 250
µ
A
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
mperature
200
—
—
—
—
V
∆
BV
DSS
I
D
= 250
µ
A, Referenced to 25°C
0.24
V/°C
/
∆
T
J
Coefficient
I
DSS
V
DS
= 200
V
,
V
GS
= 0 V
V
DS
= 160
V
,
T
C
= 125°C
V
GS
= 30
V
,
V
DS
= 0 V
—
—
—
—
—
—
—
—
10
µ
A
µ
A
nA
nA
Zero Gate Voltage Drain Current
100
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= -30
V
, V
DS
= 0 V
On Characteristics
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250
µ
A
Gate Threshold Voltage
2.0
—
—
4.0
V
Ω
S
Static Drain-Source
V
GS
=
1
0
V
,
I
D
=
1
6 A
0.068 0.082
On-Resistance
Forward Transconductance
g
FS
V
DS
= 40
V
, I
D
= 16 A
—
20
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
1700
400
185
2220
520
245
pF
pF
pF
V
DS
= 25
V
,
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
25
60
550
500
430
110
—
ns
ns
ns
V
DD
= 100
V
,
I
D
= 32 A,
270
245
210
82.5
10.5
44.5
R
G
= 25
Ω
(Note 4)
(Note 4)
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
V
DS
= 160
V
,
I
D
= 32 A,
GS
= 10 V
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
—
265
2.73
32
128
1.5
—
A
A
V
ns
µ
C
I
SM
V
SD
t
rr
V
GS
= 0 V, I
S
= 32 A
V
GS
= 0 V, I
S
= 32 A,
dI
F
/ dt = 100 A/
µ
s
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
—
ꢀꢁꢂꢃꢄꢅ
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L =
1.4
mH, I
AS
=
32
A, V
DD
= 50 V, R
G
= 25
Ω
, starting T
J
= 25
o
C.
3. I
SD
≤
32
A, di/dt ≤
3
00 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25
o
C.
4. Essentially independent of operating temperature.
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
2
Typical
Performance
Characteristics
10
2
10
1
10
0
10
2
V
G
S
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
150
o
C
Bottom :
.5 V
10
1
25
o
C
-55
o
C
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
※
N
otes :
1. V
D
S
= 40V
2. 250µ s Pulse Test
10
0
10
-1
10
10
0
10
1
-1
4
6
2
2
8
10
V
G
S
, Gate-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.1
0.0
10
2
10
1
10
0
V
G
S
=
1
0V
150
℃
25
℃
V
G
S
=
2
0V
※
N
otes :
1. V
G
S
= 0V
※
N
ote : T = 25
℃
2. 250µ s Pulse Test
J
-1
10
0.0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
V
SD
,
S
ource-Drain voltage [V]
I
D
,
D
rain Current [A]
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6000
C
iss
=
C
gs
+ C
gd
(C
ds
= shorted)
C
oss
=
C
ds
+ C
gd
rss
=
C
gd
V
D
S
=
4
0V
V
D
S
=
1
00V
C
5000
4000
3000
2000
1000
0
V
D
S
=
1
60V
C
iss
6
C
oss
4
C
rss
※
N
otes :
1. V
G
S
= 0 V
2. f = 1 MHz
2
※
N
ote : I
D
=
3
2.0A
0
-1
10
10
0
10
1
0
20
40
60
80
100
Q
G
,
T
otal Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
3
Typical
Performance
Characteristics
(Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
N
otes :
1. V
G
S
= 0 V
2. I
D
=
2
50 µ A
0.9
0.8
※
N
otes :
1. V
G
S
=
1
0 V
2. I
D
=
1
6 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
3
10
40
Operation in This Area
is Limited by R
D
S(on)
2
10
30
20
10
0
100
µ
s
1
m
s
1
10 ms
DC
10
0
※
N
otes :
10
1. T
C
=
2
5
o
C
2. T
= 150
o
C
J
3. Single Pulse
-1
10
0
1
25
50
75
100
125
150
10
10
10
2
T
C
,
C
ase Temperature [
℃
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
1 0
0
D = 0 .5
※
N o te s
1 .
θ
J
C
(
t)
2 .
D u
t
y
F a cto r,
D = t
1
/
t
2
3 .
T
J
M
T
C
P
D M
θ
J
C
(
t)
:
Z
= 0
.
6 1
℃
/W M
a x.
0 .2
1 0
–
1
–
=
* Z
0 .1
0 .0 5
P
DM
0 .0 2
0
.
0 1
t
1
t
2
s in g le
p u lse
1 0
–
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
-1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
ve P
u ls e
D u ra tio n
[s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
4
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure
12
. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure
13
. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
Figure
14
. Unclamped Inductive Switching Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure
15
. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
6
Mechanical Dimensions
Figure 16. T
O
3, Plastic,
3-Lead
EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
7
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
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intended to be an exhaustive list of all such trademarks.
AccuPower™
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BitSiC™
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CROSSVOLT
™
CTL™
F-PFS™
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Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
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TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
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Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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OPTOPLANAR
FACT
FAST
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
