onsemi-FQA65N20
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November
2013
FQA65N20
N-Channel QFET
®
MOSFET
200 V, 65 A, 32 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
65 A, 200 V, R
I
D
= 32.5 A
= 32
m
Ω
(Max.)
@ V
= 10 V
,
•
DS(on)
GS
•
•
•
Low
G
ate
C
harge (
T
yp
.
170 nC)
Low Crss (
T
yp
.
90 pF)
100%
A
valanche
T
ested
D
G
G
D
TO-3PN
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
FQA65N20
Unit
V
V
I
Drain-Source Voltage
200
65
DSS
– Continuous (T
= 25°C)
Drain Current
A
D
C
– Continuous (T
= 100°C)
41
A
C
I
(Note 1)
Drain Current
– Pulsed
260
A
DM
V
E
I
Gate-Source Voltage
±
30
1010
65
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
31
mJ
V/ns
W
AR
dv/dt
5.5
P
Power Dissipation (T
= 25°C)
310
D
C
– Derate above 25°C
2.5
W/°C
°C
T , T
Operating and Storage
T
e
mperature Range
Maximum
L
ead
T
emperature for
S
oldering,
1/8
”
from
C
ase for 5
S
econds
-55 to +150
J
STG
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Unit
°C
/
W
°C
/
W
°C
/
W
FQA65N20
R
R
R
Thermal Resistance, Junction-to-Case
, Max.
Thermal Resistance, Case-to-Sink
, Typ
Thermal Resistance, Junction-to-Ambient
, Max.
0.4
0.24
40
θ
JC
θ
CS
θ
JA
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
FQA
65N20
FQA65N20
TO-3PN
N/A
30 units
Tube
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
.
Typ
.
Max
.
Unit
Off Characteristics
BV
V
I
= 0
V
, I
=
2
50
µ
A
Drain-Source Breakdown Voltage
200
—
—
—
—
V
DSS
GS
D
∆
BV
Breakdown Voltage
T
e
mperature
Coefficient
DSS
= 250
µ
A, Referenced to 25°C
0.15
V/°C
D
/
∆
T
J
I
V
V
V
V
= 200
V
, V
= 0 V
—
—
—
—
—
—
—
—
1
µ
A
µ
A
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 160
V
, T
=
1
25°C
10
DS
GS
GS
C
I
= 30
V
, V
= 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
I
= -30
V
, V
= 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V
, I
= 250
µ
A
Gate Threshold Voltage
3.0
—
—
5.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
=
1
0
V
,
I =
3
2.
5
A
0.025 0.032
D
g
= 40
V
, I
=
3
2.5 A
Forward Transconductance
—
58
—
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
6600
1000
90
7900
1200
120
pF
pF
pF
iss
V
= 25
V
, V
= 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
120
640
340
275
170
45
250
770
690
560
200
—
ns
ns
d(on)
V
= 100
V
, I
=
6
5 A,
DD
D
r
R
= 25
Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 160
V
, I
=
6
5 A,
DS
D
= 10 V
gs
gd
GS
75
—
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
—
—
—
—
—
—
—
65
260
1.5
—
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0
V
, I
=
6
5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
—
V
SD
GS
S
= 0
V
, I
=
6
5 A,
195
1.4
ns
µ
C
rr
GS
S
dI /
dt = 100 A/
µ
s
Q
Reverse Recovery Charge
—
F
rr
ꢀꢁꢂꢃꢄꢅ
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L =
0.36
mH, I
AS
=
6
5 A, V
DD
= 50 V, R
G
= 25
Ω
, starting T
J
= 25
o
C.
3. I
SD
≤
6
5 A, di/dt ≤
3
00 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25
o
C.
4. Essentially independent of operating temperature.
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
2
Typical Characteristics
V
G
S
Top
:
15 V
10 V
10
2
10
1
10
0
10
2
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom
:
℃
150
℃
25
10
1
-55
℃
※
Notes :
※
Notes :
μ
1. 250
s Pulse Test
1. V
D
S
= 40V
℃
2. T
C
= 25
μ
2. 250
s Pulse Test
-1
10
-1
10
10
0
V
DS
, Drain-Source Voltage
[V]
10
1
2
4
8
10
V
GS
, Gate-Source Voltage
[V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
10
2
10
1
10
0
V
G
S
= 10V
V
G
S
= 20V
℃
℃
25
※
Notes :
1. V
G
S
= 0V
※
℃
Note : T
= 25
μ
2. 250
s Pulse Test
J
-1
10
0
50
100
150
200
250
300
350
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
D
, Drain Current
[A]
V
S
D
, Source-Drain Voltage
[V]
Figure 3. On-Resistance Variation
vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
14000
12000
10000
8000
6000
4000
2000
0
12
10
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
V
DS
= 40V
V
DS
= 100V
C
V
DS
= 160V
C
iss
C
oss
6
※
Notes :
4
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
2
※
Note : I
D
= 65 A
0
-1
10
10
0
10
1
0
20
40
60
80
100
120
140
160
180
Q
G
, Total Gate Charge [nC]
V
DS
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate
Charge Characteristics
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
3
Typical Characteristics
(Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※
N
otes :
1. V
G
S
= 0 V
2. I
D
=
2
50
μ
A
※
Notes :
1. V
G
S
= 10 V
2. I
D
= 32.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C
]
T
J
, Junction Temperature [
o
C
]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
70
60
50
40
30
20
10
0
10
3
Operation in This Area
is Limited by R
DS(on)
10
µ
s
10
2
10
1
10
0
100
µ
s
1
m
s
10 ms
DC
※
Notes :
1. T
C
= 25
o
2. T
J
= 150
o
C
C
3. Single Pulse
-1
10
10
0
10
1
10
2
25
50
75
100
125
150
℃
T
C
, Case Temperature [
]
V
DS
,
D
rain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case
Temperature
D = 0
.
5
※
N o
t
e s
1 .
Z
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
1
0
–
1
0
.
2
℃
/W M
a x.
=
0
.
4
3 .
T
J M
–
T
C
=
P
D
* Z
θ
J
C
(
t)
M
0
.
1
0
.
0 5
P
DM
0
.
0 2
1
0
–
2
t
1
0
.
0 1
t
2
s in g le
p u ls e
1 0
–
5
1
0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, R
e c t a n g u l a r
P u l s
e D
u r a t i o n
[ s e c ]
Figure 11. Transient Thermal Response Curve
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
4
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure
12
. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure
13
. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
Figure
14
. Unclamped Inductive Switching Test Circuit & Waveforms
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure
15
. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
6
Mechanical Dimensions
Figure 16. T
O
3, Plastic,
3-Lead
EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
7
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
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intended to be an exhaustive list of all such trademarks.
AccuPower™
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CROSSVOLT
™
CTL™
F-PFS™
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Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
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PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
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TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
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and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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FAST
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and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
©2001
Fairchild Semiconductor Corporation
FQA65N20
Rev. C1
