onsemi-FQA8N90C
| Part # | onsemi-FQA8N90C |
Download  | onsemi-FQA8N90C |
September 2006
®
QFET
FQA8N90C
900V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
8A, 900V, R
DS(on)
= 1.9
Ω
@V
GS
= 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical
12pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3P
FQA Series
G D
S
S
Absolute Maximum Ratings
Symbol
Parameter
FQA8N90C
Units
V
V
DSS
I
D
Drain-Source Voltage
900
8.0
Drain Current
– Continuous (T
C
= 25°C)
– Continuous (T
C
= 100°C)
– Pulsed
A
5.1
A
(Note 1)
I
DM
Drain Current
32
A
V
GSS
E
AS
I
AR
Gate-Source Voltage
±
30
850
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
8.0
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
24
mJ
V/ns
W
4.0
240
– Derate above 25°C
1.92
-55 to +150
W/°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
—
Max
0.52
—
Units
°C
/
W
°C
/
W
°C
/
W
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
0.24
—
Thermal Resistance, Junction-to-Ambient
40
©2006 Fairchild Semiconductor Corporation
FQA8N90C Rev. A1
1
Package Marking and Ordering Information
Device Marking
FQA8N90C
Device
FQA8N90C
Package
TO-3P
Reel Size
Tape Width
Quantity
—
—
—
—
30
30
FQA8N90C
FQA8N90C_F109
TO-3PN
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0
V
,
I
D
= 250
µ
A
900
—
—
—
V
∆
BV
DSS
∆
T
J
/
Breakdown Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, Referenced to 25°C
—
0.95
V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 900 V, V
GS
= 0 V
V
DS
= 720 V, T
C
= 125°C
V
GS
= 30
V
,
V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
—
—
—
—
—
—
—
—
10
µ
A
µ
A
nA
nA
100
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
V
GS
= 10
V
,
I
D
= 4.0 A
V
DS
= 50
V
,
I
D
= 4.0 A
3.0
—
—
5.0
1.9
—
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
1.6
5.5
(Note 4)
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25
V
,
V
GS
= 0 V,
f = 1.0 MHz
—
—
—
1600
130
12
2080
170
15
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
V
DD
= 450
V
,
I
D
= 11.0A,
—
—
—
—
—
—
—
ns
ns
40
110
70
70
35
10
14
90
R
G
= 25
Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
230
150
150
ns
(Note 4, 5)
ns
Q
g
V
DS
= 720 V, I
D
= 11.0A,
GS
= 10 V
nC
nC
nC
45
—
V
Q
gs
Q
gd
(Note 4, 5)
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
8.0
32
1.4
—
A
A
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0
V
,
I
S
=8.0 A
—
V
V
GS
= 0
V
,
I
S
= 8.0 A,
530
5.8
ns
dI
F
/ dt = 100 A/
µ
s
(Note 4)
Q
rr
Reverse Recovery Charge
—
µ
C
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, I
=8.0A, V
= 50V, R
= 25
Ω,
Starting T =
25°C
AS
DD
G
J
3. I
≤
8.0A, di/dt
≤
200A/
µ
s, V
≤
BV Starting
T =
25°C
DSS, J
SD
DD
4. Pulse
T
e
st : Pulse width
≤
300
µ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
2
FQA8N90C Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
Top :
15.0
G
V
S
10.
0
V
8.
0
V
7.
0
V
6.
5
V
6.
0
V
10
1
10
1
Botto
m
:
5
.5
V
150
o
C
10
0
-55
o
C
10
0
25
o
C
※
N
otes :
1. 250µ s Pulse Test
2. T
C
=
2
5
℃
※
N
otes :
1. V
D
S
=
5
0V
2. 250µ s Pulse Test
-1
10
-1
10
-1
10
0
10
1
10
2
4
6
8
10
V
G
S
,
G
ate-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4.0
3.5
10
1
V
G
S
=
1
0V
3.0
V
G
S
=
2
0V
2.5
10
0
2.0
1.5
150
℃
25
℃
※
N
otes :
1. V
G
S
=
0
V
2. 250µ s Pulse Test
※
N
ot
e
: T =
2
5
℃
J
-1
1.0
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current [A]
V ,
S
ource-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
12
C
iss
=
C
g
s
+
C
g
d
(C
d
s
=
s
horted)
C
C
oss
= C
+ C
gd
rss
= C
d
s
V
DS
= 180V
gd
2500
2000
1500
1000
500
0
10
V
D
S
= 450V
V
DS
= 720V
C
8
iss
6
4
2
C
oss
※
N
otes :
1. V
G
S
= 0 V
2. f
=
1
M
Hz
C
rss
※
N
ot
e
:
I
D
=
8
A
0
10
10
0
10
1
-1
0
5
10
15
20
25
30
35
40
Q ,
T
otal Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
G
3
FQA8N90C Rev. A1
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※
N
ote
s
:
1. V
G
S
= 0 V
2. I
D
=
2
50 µ A
0.9
※
N
otes :
1. V
= 10 V
2. I
D
G
=
S
4
.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
Operation in This Area
is Li
m
i
ted by R
D
S(on)
10
2
10
µ
s
100
µ
s
1
m
s
10 ms
DC
10
1
10
0
6
4
※
N
otes :
-1
10
1. T
C
=
2
5
o
C
2
2. T
= 150
o
C
J
3. Single Pulse
-2
0
25
10
10
0
10
1
2
10
3
10
50
75
100
125
150
T
C
,
C
ase Temperature [
℃
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
10
0
D = 0
.
5
※
N
o
tes
1. Z
(t) = 0.52
℃
/W M
ax.
2. D
θ
u
J
t
C
y
F
actor, D
=t
1
/t
2
:
0 .2
10
-1
3. T
J
M
–
T
C
= P
D
M
*
Z
θ
J
C
(t)
0
.
1
0 .0 5
0 .0 2
P
DM
t
1
t
2
0 .0 1
s
i
n g le
p u l
s
e
10
-2
10
-5
10
-4
10
–
3
10
–
2
10
-1
10
0
10
1
t
1
, S
q
uare W
ave P
ulse D
uration [sec]
4
FQA8N90C Rev. A1
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
FQA8N90C Rev. A1
Mechanical Dimensions
TO-3P
15.60
±
0.20
4.80
±
0.20
13.60
±
0.20
9.60
±
0.20
+0.15
ø3.20
±
0.10
1.50
–0.05
2.00
±
0.20
3.00
±
0.20
1.00
±
0.20
1.40
±
0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45
±
0.30
]
[5.45
±
0.30
]
Dimensions in Millimeters
7
FQA8N90C Rev. A1
Mechanical Dimensions
(Continued)
TO-3PN
Dimensions in Millimeters
8
FQA8N90C Rev. A1
TRADEMARKS
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™
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I
2
C™
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SyncFET™
TCM™
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®
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™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
9
FQA8N90C Rev. A1
