onsemi-FQD4N50TM
| Part # | onsemi-FQD4N50TM |
Download  | onsemi-FQD4N50TM |
March 2013
FQD
4
N50 / FQU
4
N50
N-Channel QF
E
T
®
MOSFET
5
0
0 V,
2.
6
A,
2.
7
Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
•
•
•
2.
6
A,
50
0 V, R
DS(on)
=
2.
7
Ω
(
Max
.)@V
GS
=10 V, I
D
=
1.
3
A
Low Gate Charge (Typ.
10
nC)
Low C
rss
(Typ.
6.0
pF)
100% Avalanche Tested
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©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
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©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
ꢑ !ꢌꢕꢊꢄꢈꢔꢒꢊꢓꢊꢕꢆꢇꢓꢌꢂꢆꢌꢕꢂ
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ꢀꢁꢂꢃꢄꢅꢆ’ꢈꢆꢔꢎꢕꢖꢅꢂꢁꢘꢎꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
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ꢂꢀ
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ꢗꢊꢄꢁꢊꢍꢁꢘꢎꢆꢙꢐꢈꢆ”ꢘꢃꢄꢌꢅꢆꢉꢃꢄꢄꢅꢎꢍꢆ
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ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
ꢀꢁꢂꢃꢄꢅꢆꢑꢈꢆꢒꢊꢍꢅꢆꢆꢉꢏꢊꢄꢂꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋꢅ
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©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD4N50 / FQU4N50 Rev. C0
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©2009 Fairchild Semiconductor Corporation
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