onsemi-FQH44N10-F133
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100
V
,
4
8 A, 39 m
W
FQH44N10
Description
This N
−
Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on
−
state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, audio
amplifier, DC motor control, and variable switching power
applications.
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
39 m
W
@ 10 V
48 A
D
Features
•
48 A, 100
V
, R
= 39 m
W
(Max.) @ V
= 10
V
,
GS
DS(on)
I =
24 A
D
•
Low Gate Charge (Typ. 48 nC)
•
Low Crss (Typ. 85 pF)
G
•
100% Avalanche Tested
S
•
175
°
C Maximum Junction Temperature Rating
POWER MOSFET
G
D
S
TO
−
247
−
3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FQH
44N10
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FQH44N10
= Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
March, 2021
−
Rev. 5
FQH44N10/D
FQH44N10
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
FQH44N10
−
133
Unit
V
V
DSS
Drain
−
Source Voltage
100
48
I
D
Drain Current
Continuous (T
= 25
°
C)
A
C
Continuous (T
= 100
°
C)
34
C
I
Drain Current
192
25
A
V
DM
V
GSS
Gate
−
Source Voltage
E
Avalanche Current (Note 1)
530
48
mJ
A
AS
AR
I
E
Power Dissipation
18
mJ
V/ns
W
AR
dv/dt
6.0
P
(T =
25
°
C)
180
1.2
D
C
Derate Above 25
°
C
W/
°
C
°
C
T , T
Operating and Storage
T
e
mperature Range
−
55 to +175
300
J
STG
T
Maximum Lead
T
e
mperature for Soldering Purpose
1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. L
= 0.345 mH, I
= 48 A, V
= 25
V
, R
=
2
5
W
, starting T
= 25
°
C.
AS
DD
G
DSS
J
3. I
≤
43.5 A, di/dt
≤
300 A/
m
s, V
≤
BV
, starting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FQH44N10
−
133
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case
−
to
−
Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
0.83
0.24
40
_
C/W
_
C/W
_
C/W
q
JC
q
CS
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQH44N10
−
133
FQH44N10
TO
−
247
Tube
N/A
N/A
30 Units
2
FQH44N10
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain
−
Source Breakdown Voltage
V
I
= 0
V
, I
= 250
m
A
100
V
DSS
GS
D
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
= 250
m
A, Referenced to 25
_
C
0.1
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 100
V
, V
= 0 V
1
m
A
DSS
GS
= 80
V
, T
=
1
50
_
C
10
C
I
Gate
−
Body Leakage Current, Forward
Gate
−
Body Leakage Current, Reverse
= 25
V
, V
= 0 V
100
−
100
nA
nA
GSSF
DS
I
=
−
25 V, V
= 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V
, I
= 250
m
A
2.0
4.0
V
W
S
GS(th)
DS(on)
GS
D
R
Static Drain
−
Source On
−
Resistance
Forward Transconductance
= 10
V
, I
= 24 A
0.03
31
0.039
D
g
FS
= 40
V
, I
=
2
4 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25
V
, V
= 0 V, f =
1
.0 MHz
1400
425
85
1800
550
110
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate
−
Source Charge
Gate
−
Drain Charge
V
= 50
V
, I
= 43.5 A, R
= 25
W
19
190
90
45
390
190
210
62
ns
ns
d(on)
DD
D
g
t
r
t
ns
d(off)
t
f
100
48
ns
Q
V
DS
= 80
V
, I
=
4
3.5 A, V
= 10 V
nC
nC
nC
g
D
GS
Q
9.0
24
gs
gd
Q
DRAIN
−
SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain
−
Source Diode Forward Current
Maximum Pulsed Drain
−
Source Diode Forward Current
48
192
1.5
A
A
S
I
SM
V
SD
Drain
−
Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 48A
V
GS
S
t
rr
= 0
V
, I
= 43.5
A,
98
ns
nC
GS
S
dI /dt
= 100 A/
m
s
F
Q
Reverse Recovery Charge
360
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
FQH44N10
TYPICAL PERFORMANCE CHARACTERISTICS
T
o
p V
GS
:
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
2
10
2
1
10
175
°
C
1
10
Bottom :
4.5 V
10
25
°
C
−
55
°
C
0
10
* Notes :
1. 250
m
s Pulse
T
e
st
* Notes :
1. V
=40 V
DS
2. T
= 25
°
C
C
2. 250
m
s Pulse
T
e
st
0
−
1
2
10
10
−
1
0
1
4
6
8
10
10
10
10
V
DS
, Drain
−
Source Voltage (V)
V
GS
, Gate
−
Source Voltage (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
2
1
10
V
= 10 V
GS
10
V
= 20 V
GS
0
10
* Notes :
175
°
C 25
°
C
1. V
= 0 V
DS
* Notes : T
= 25
°
C
J
2. 250
m
s Pulse
T
e
st
−
1
10
0
30
60
90
120
150
180
0.2 0.4 0.6 0.8 1.0 1.2
1.4 1.6 1.8
2.0
I ,
Drain Current (A)
D
V
SD
, Source
−
Drain Voltage (V)
Figure 3. On
−
Resistance Variation
Figure 4. Body Diode Forward Voltage
vs. Drain Current and Gate Voltage
Variation vs. Source Current and Temperature
12
4000
3500
3000
2500
2000
1500
1000
500
C
C
C
= C
+ C
(C =
shorted)
iss
gs
gd
ds
= C
+ C
V
DS
= 50 V
oss
rss
ds
gd
10
8
= C
gd
V
DS
= 80 V
* Notes :
1. V
= 0 V
2. f = 1 MHz
GS
C
iss
6
4
C
oss
C
rss
2
* Notes : I
= 43.5 A
D
0
0
−
1
0
1
10
10
10
0
10
20
30
40
50
V
DS
, Drain
−
Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FQH44N10
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
3.0
2.5
2.0
1.5
1.2
1.1
1.0
0.9
0.8
1.0
* Notes:
* Notes:
1. V
= 0 V
1. V
= 10 V
0.5
GS
GS
2. I
= 21.75 A
D
2. I
= 250
m
A
D
0.0
−
100
−
100
−
50
0
50
100
150
200
−
50
0
50
100
150
200
T ,
Junction Temperature (
5
C)
J
T ,
Junction Temperature (
5
C)
J
Figure 7. Breakdown Voltage
Variation vs. Temperature
Figure 8. On
−
Resistance
Variation vs. Temperature
50
40
30
20
10
0
3
10
10
10
Operation in This Area is
Limited by R
DS(on)
10
m
s
2
1
100
m
s
1 ms
10 ms
DC
* Notes:
1. T
= 25
°
C
0
10
C
2. T
= 175
°
C
J
3. Single Pulse
−
1
10
0
1
2
10
10
10
25
50
75
100
125
150
175
V
DS
, Drain
−
Source Voltage (V)
T ,
Case Temperature (
5
C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain
Current vs. Case Temperature
0
10
D=0.5
0.2
* Notes :
1. Z
(t) = 0.83
°
C/W Max.
q
JC
2. Duty Factor, D = t
/t
1
2
3. T
−
T =
P
* Z
(t)
q
JC
0.1
−
1
JM
C
DM
10
0.05
P
DM
0.02
0.01
t
1
t
2
Single Pulse
−
2
10
−
5
−
4
−
3
−
2
−
1
−
0
1
10
10
10
10
10
10
10
t1, Square Wave Pulse Duration (sec)
Figure 11. Transient Thermal Response Curve
5
FQH44N10
V
GS
Q
g
50 k
W
Same Type
as DUT
12 V
200 nF
300 nF
Q
Q
gs
gd
V
DS
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BV
DSS
BV
DSS
*
V
DD
2
1
2
E
AS
+
L I
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
6
FQH44N10
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
Body Diode Recovery dv/dt
(DUT)
V
DD
V
SD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM
MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ZZ =
Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO
−
247
−
3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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onsemi
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
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