onsemi-FQP10N60C
| Part # | onsemi-FQP10N60C |
Download  | onsemi-FQP10N60C |
November 2013
FQP10N60C / FQPF10N60C
N-Channel
QFET
®
MOSFET
6
00 V,
9.5
A,
73
0 mΩ
Description
Features
9
.5 A, 600 V, R
I
D
=
4.75
A
=
7
30 m
Ω
(Max.)
@ V
= 10 V
,
DS(on) GS
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to mini-mize on-state resistance,
provide superior switching perfor-mance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched
mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
•
•
•
•
Low
G
ate
C
harge (
Typ.
44
nC)
Low Crss (
Typ.
18
pF)
100%
A
valanche
T
ested
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
Parameter
FQP10N60C FQPF10N60C
Unit
V
Drain-Source Voltage
600
I
D
Drain Current
– Continuous (T
C
= 25°C)
– Continuous (T
C
= 100°C)
– Pulsed
9.5
5.7
38
9.5 *
5.7 *
38 *
A
A
(Note 1)
I
DM
Drain Current
A
V
GSS
E
AS
I
AR
Gate-Source Voltage
±
30
700
9.5
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
15.6
4.5
mJ
V/ns
W
156
50
– Derate above 25°C
1.25
0.4
W/°C
°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
300
Maximum lead temperature for soldering,
1/8
”
from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θ
JC
Parameter
FQP10N60C FQPF10N60C
Unit
°C
/
W
°C
/
W
°C
/
W
0.8
0.5
2.5
—
Thermal Resistance, Junction-to-Case
, Max.
Thermal Resistance, Case-to-Sink
,
Typ.
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
, Max.
62.5
62.5
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQP10N60C
TO-220
Tube
N/A
N/A
50 units
FQP10N60C
TO-220
F
TO-220
F
TO-220
F
Tube
Tube
Tube
N/A
N/A
N/A
N/A
N/A
N/A
50 units
50 units
50 units
FQPF10N60C
FQPF10N60CT
FQPF10N60C
FQPF10N60CT
FQPF10N60C
FQPF10N60C_F105
Electrical Characteristics
T =
25°C unless otherwise noted
.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
µ
A
600
—
—
—
—
V
∆
BV
DSS
/ ∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, Referenced to 25°C
0.7
V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
—
—
—
—
—
—
—
—
1
µ
A
µ
A
nA
nA
10
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Body Leakage Current, Reverse
V
GS
= -30
V
,
V
DS
= 0 V
100
-100
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
V
DS
= V
GS
, I
D
= 250
µ
A
2.0
—
—
4.0
V
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 4.75 A
0.6
0.73
Ω
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 4.75 A
—
8.0
—
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
—
—
—
1570
166
18
2040
215
24
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
V
DD
= 300 V, I
D
= 9.5A,
R
G
= 25
Ω
—
—
—
—
—
—
—
23
69
55
150
300
165
57
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
144
77
ns
(Note 4)
(Note 4)
ns
Q
g
V
DS
= 480 V, I
D
= 9.5A,
V
GS
= 10 V
44
nC
nC
nC
Q
gs
Q
gd
6.7
18.5
—
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
9.5
38
1.4
—
A
A
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 9.5 A
—
V
V
GS
= 0 V, I
S
= 9.5 A,
420
4.2
ns
µ
C
dI
F
/ dt = 100 A/
µ
s
Q
rr
Reverse Recovery Charge
—
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L =
14.2
mH, I
=
9.5
A, V
= 50 V, R
= 25
Ω
, starting T
= 25
°
C.
AS
DD
G
J
3. I
≤
9.5
A, di/dt
≤
200 A/
µ
s, V
≤
BV
, starting T
= 25
°
C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
G
S
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
10
1
150
°
C
-55
°
C
25
°
C
Bottom :
4.5 V
10
0
10
0
* Notes :
1. V
DS
= 40V
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
°
C
2. 250
µ
s Pulse Test
-1
10
-1
10
2
4
6
8
10
10
0
10
1
V
G
S
, Gate-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
10
1
1.5
V
GS
= 10V
1.0
10
0
150
°
C
V
G
S
= 20V
0.5
0.0
* Notes :
25
°
C
1. V
G
S
= 0V
2. 250
µ
s Pulse Test
* Note : T
J
= 25
°
C
-1
10
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current [A]
V
S
D
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
12
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
oss
= C
ds
+ C
gd
rss
= C
gd
C
V
DS
= 120V
C
2500
2000
1500
1000
500
10
V
DS
= 300V
C
iss
V
DS
= 480V
8
C
oss
6
4
2
* Notes ;
1. V
G
S
= 0 V
2. f = 1 MHz
C
rss
* Note : I
D
= 9.5A
0
0
10
0
10
20
30
40
50
-1
10
0
10
1
Q
G
, Total Gate Charge [nC]
V
D
S
, Drain-Source Voltage [V]
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
*
N
otes :
1. V
G
S
= 0 V
0.9
* Notes :
1. V
GS
= 10 V
2. I
D
=
2
50
µ
A
2. I
D
= 4.75 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T
J
, Junction Temperature [
°
C]
T,
J
unction Temperature [
°
C
]
J
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
10
2
Operation in This Area
Operation in This Area
is Limited by R
D
S(on)
10
2
is Limited by R
D
S(on)
10
µ
s
10
µ
s
100
µ
s
100
µ
s
10
1
10
1
1
m
s
1
m
s
10 ms
100 ms
10 ms
100 ms
DC
10
0
DC
10
0
-1
*
N
otes :
1. T
C
= 25
°
C
*
N
otes :
10
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
2. T
J
= 150
°
C
3. Single Pulse
-1
-2
10
10
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
D
S
,
D
rain-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
°
C]
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
4
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
1 0
0
1 0
–
1
1 0
–
2
D = 0
.
5
0
.
2
*
N o
t
e s
1 .
Z
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
=
0
.
8
°
C
/
W
M a x .
0
.
1
3 .
T
J M
–
T
C
=
P
D
* Z
θ
J C
(
t)
M
0
.
0 5
0
.
0 2
0
.
0 1
P
DM
s in g le
p u ls e
t
1
t
2
1 0
–
5
1 0
–
4
1 0
-3
1 0
–
2
1 0
-1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
D = 0
.
5
1 0
0
0
.
2
*
N o
t
e s
1 .
Z
θ
J C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
=
2
.
5
°
C
/
W
M a x .
0
.
1
3 .
T
J M
–
T
C
=
P
D
* Z
θ
J C
(
t)
M
0
.
0 5
1 0
–
1
0
.
0 2
0
.
0 1
P
DM
t
1
s in g le
p u ls e
t
2
1 0
–
2
1 0
–
5
1 0
-4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
5
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
GS
V
DD
V
DS
(t)
DUT
t
p
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
6
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
7
Mechanical Dimensions
Figure
16
. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
8
Mechanical Dimensions
Figure
17
. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
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®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
10
