onsemi-FQP47P06
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DATA SHEET
-60
V
,
–
47 A, 26 m
W
V
R
MAX
I MAX
D
DSS
DS(on)
−60 V
26 m
W
@ −10 V
−47 A
FQP47P06
S
Description
This P−Channel enhancement mode power MOSFET is produced
using
onsemi
’s proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored to reduce
on−state resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor control,
and variable switching power applications.
G
D
P−Channel MOSFET
Features
•
−47 A, −60
V
, R
= 26 m
W
(Max.) @ V
= −10
V
,
GS
DS(on)
I =
−23.5 A
D
•
Low Gate Charge (Typ. 84 nC)
•
Low Crss (Typ. 320 pF)
G
•
100% Avalanche Tested
D
S
•
175
°
C Maximum Junction Temperature Rating
TO−220−3LD
CASE 340AT
MARKING DIAGRAM
$Y&Z&3&K
FQP
47P06
$Y
&Z
&3
&K
= Logo
= Assembly Plant Code
= 3−Digit Plant Code
= 2−Digits Lot Run Traceability Code
FQP47P06 =
Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FQP47P06
TO−220−3LD 1000
Units / Tube
©
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2022 − Rev. 3
FQP47P06/D
FQP47P06
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise specified)
C
Symbol
Parameter
FQP47P06
−60
Unit
V
V
DSS
Drain−Source Voltage
Drain Current
I
D
− Continuous (T
= 25
°
C)
−47
A
C
− Continuous (T
= 100
°
C)
−33.2
−188
25
A
C
I
Gate−Source Voltage
− Pulsed
A
DM
V
GSS
V
E
820
mJ
A
AS
AR
I
−47
E
16
mJ
V/ns
W
AR
dv/dt
−7.0
P
Power Dissipation (T
= 25
°
C)
160
D
C
− Derate above 25
°
C
1.06
W/
°
C
°
C
°
C
T , T
Operating and Storage
T
e
mperature Range
−55 to +175
300
J
STG
T
L
Maximum Lead
T
e
mperature for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L
= 0.43 mH, I
= −47 A, V
= −25
V
, R
=
2
5
W
, Starting T
= 25
°
C
AS
DD
G
J
3. I
≤
−47 A, di/dt
≤
300A/
m
s, V
≤
BV
, Starting T
= 25
°
C
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Characteristic
FQP47P06
0.94
Unit
°
C/W
°
C/W
°
C/W
R
R
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Case−to−Sink, Typ.
Thermal Resistance, Junction−to−Ambient, Max.
q
JC
0.5
q
CS
R
62.5
q
JA
2
FQP47P06
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0
V
, I
= −250
m
A
−60
−
−
−
−
V
DSS
GS
D
D
BV
/
D
T
Breakdown Voltage
T
e
mperature Coefficient
= −250
m
A, Referenced to 25
°
C
−0.06
V/
°
C
DSS
D
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= −60
V
, V
= 0 V
−
−
−
−
−
−
−
−
−1
−10
−100
100
m
A
m
A
nA
nA
DSS
DS
GS
= −48
V
, T
=
1
50
°
C
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= −25
V
, V
= 0 V
DS
GSSF
I
= 25 V, V
= 0 V
DS
GSSR
ON CHARACTERISTICS
V
)
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V
, I
= −250
m
A
−2.0
−
−
−4.0
0.026
−
V
W
S
GS(th
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= −10
V
, I
=
−
23.5 A
0.021
21
D
g
FS
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −25
V
, V
= 0 V, f =
1
.0 MHz
−
−
−
2800
1300
320
3600
1700
420
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
T
o
tal Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= −30
V
, I
=
−
23.5 A, R
= 25
W
−
−
−
−
−
−
−
50
450
100
195
84
110
910
210
400
110
−
ns
ns
d(on)
DD
D
G
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
= −48
V
, I
=
−
47 A, V
= −10 V
nC
nC
nC
g
D
GS
Q
18
gs
gd
Q
44
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
−47
−188
−4.0
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= −47 A
−
V
GS
S
t
= 0
V
, I
= −47 A,
130
0.55
ns
m
C
rr
GS
S
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: Pulse width
≤
300
m
s, Duty cycle
≤
2%
5. Essentially
independent of operating temperature
3
FQP47P06
TYPICAL CHARACTERISTICS
V
GS
2
10
T
o
p:
− 15.0 V
− 10.0 V
− 8.0 V
− 7.0 V
− 6.0 V
− 5.5 V
− 5.0 V
2
1
0
10
10
10
1
175
°
C
25
°
C
10
Bottom: − 4.5 V
0
−55
°
C
10
* Notes:
1. 250
m
s Pulse
T
e
st
* Notes:
1. V
= −30 V
DS
2. T
= 25
°
C
2. 250
m
s Pulse
T
e
st
C
−1
10
−1
0
1
2
4
6
8
10
10
10
10
−V ,
Drain−Source Voltage (V)
DS
−V ,
Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
2
10
V
= −10 V
GS
1
10
175
°
C
25
°
C
V
= −20 V
GS
0
10
* Notes:
1. V
= 0 V
GS
* Note: T
= 25
°
C
2. 250
m
s Pulse
T
e
st
J
−1
10
0
100
200
300
400
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
−I ,
Drain Current (A)
D
−V ,
Source−Drain Voltage (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
12
8000
7000
6000
5000
4000
3000
2000
1000
0
C
C
C
= C
+ C
(C =
shorted)
iss
gs
gd
ds
= C
+ C
gd
oss
rss
ds
C
oss
10
= C
gd
V
DS
= −30 V
* Notes:
8
6
4
2
0
V
DS
= −48 V
C
1. V
= 0 V
iss
GS
2. f = 1 MHz
C
rss
* Note: I
= −47 A
D
−1
0
1
0
10 20 30 40 50 60 70 80 90
Q ,
T
o
tal Gate Charge (nC)
10
10
10
V
DS
, Drain−Source Voltage (V)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FQP47P06
TYPICAL CHARACTERISTICS
(Continued)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
* Notes:
1. V
= 0 V
* Notes:
1. V
= −10 V
2. I
= −23.5
A
D
0.5
GS
GS
2. I
= −250
m
A
D
0.0
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction
T
e
mperature (
°
C)
J
T , Junction
T
e
mperature (
°
C)
J
Figure 7. Breakdown Voltage Variation vs.
Figure 8. On−Resistance Variation vs.
Temperature
Temperature
3
50
40
30
20
10
0
10
Operation in This Area
is Limited by R
DS(on)
2
10
100
m
s
1 ms
10 ms
DC
1
10
10
* Notes:
0
1. T
= 25
°
C
2. T
= 175
°
C
3. Single Pulse
C
J
−1
10
0
1
2
10
10
−V ,
Drain−Source Voltage (V)
10
25
50
75
100
125
150
175
T ,
Case
T
e
mperature (
°
C)
DS
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
0
10
D = 0.5
0.2
0.1
* Notes:
1. Z
(t) = 0.94
°
C/W Max.
q
JC
−1
10
2. Duty Factor, D = t
/ t
1
x Z
2
0.05
0.02
3. T
− T
= P
(t)
JC
q
JM
C
DM
P
DM
0.01
single pulse
t
1
−2
10
t
2
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t ,
Square Wave Pulse Duration (s)
1
Figure 11. Transient Thermal Response Curve
5
FQP47P06
V
GS
Same Type
as DUT
Q
g
50
k
W
200 nF
12 V
−10 V
300 nF
Q
gs
Q
gd
V
DS
V
GS
DUT
−3 mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
t
on
t
r
t
off
V
DS
t
d(on)
V
GS
t
d(off)
V
DD
t
f
V
GS
R
G
10%
DUT
−10 V
90%
V
DS
Figure 13. Resistive Switching Test Circuit & Waveforms
BV
DSS
1
2
E
AS
+
LI
AS
L
2
BV
DSS
*
V
DD
V
DS
t
p
Time
I
D
V
DD
V
DS
(t)
R
G
V
DD
I
D
(t)
DUT
−10 V
I
AS
t
p
BV
DSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
6
FQP47P06
+
V
DS
_
DUT
I
SD
L
Driver
R
G
Compliment of DUT
(N−Channel)
V
DD
V
GS
•
dv/dt controlled by R
G
•
I controlled
by pulse period
SD
Gate Pulse Width
D
+
V
GS
Gate Pulse Period
10 V
(Driver)
Body Diode Reverse Current
I
RM
I
SD
(DUT)
di/dt
I
F
M
, Body Diode Forward Current
V
SD
V
DS
(DUT)
Body Diode
V
DD
Forward Voltage Drop
Body Diode Recoverydv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
−
3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO
−
220
−
3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
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and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
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