onsemi-FQPF6N40CF
| Part # | onsemi-FQPF6N40CF |
Download  | onsemi-FQPF6N40CF |
March 2013
FQ
P
6
N
4
0C
F
/
FQPF
6
N
4
0C
F
N-Channel QFET
FRFET
MOSFET
4
00 V,
6
.
0
A,
1
.
1
Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
•
•
•
•
6.0
A,
4
0
0
V, R
DS(on)
=
1
.
1
Ω
(Max)
@V
GS
= 10 V,
I
D
= 3.0 A
Low Gate Charge (
Typ.
16
nC)
Low Crss (
Typ.
15
pF)
100% Avalanche Tested
D
G
TO-220F
FQPF Series
TO-220
G
S
D
G
D S
FQP Series
S
Absolute Maximum Ratings
Symbol
V
DSS
Parameter
FQP6N40CF
FQPF6N40CF
Unit
V
Drain-Source Voltage
400
I
D
Drain Current
– Continuous (T
C
= 25°C)
6
6*
A
– Continuous (T
C
= 100°C)
– Pulsed
3.6
24
3.6*
24*
A
I
DM
Drain Current
(Note 1)
A
V
GSS
E
AS
I
AR
Gate-Source Voltage
±
30
270
6
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
– Derate above 25°C
73
mJ
V/ns
W
20
73
38
0.58
0.3
W/°C
°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θ
JC
Parameter
FQP6N40CF
FQPF6N40CF
Unit
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
1.71
0.5
3.31
—
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
1
Package Marking and Ordering Information
Device Marking
FQP6N40CF
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FQP6N40CF
FQPF6N40CF
–
–
–
–
50
50
FQPF6N40CF
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Drain-Source Breakdown Voltage
V
I
= 0 V, I
= 250
μ
A
400
—
—
—
—
V
DSS
GS
D
Δ
BV
/
Breakdown Voltage
T
e
mperature
Coefficient
= 250
μ
A, Referenced to 25°C
0.54
V/°C
DSS
D
Δ
T
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 400 V, V
= 0 V
—
—
—
—
—
—
—
—
1
μ
A
μ
A
nA
nA
DSS
DS
GS
= 320 V, T
= 125°C
C
10
DS
GS
GS
I
I
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 30 V, V
= 0 V
100
-100
GSSF
GSSR
DS
= -30 V, V
= 0 V
DS
On Characteristics
Gate Threshold Voltage
V
V
V
= V
, I
= 250
μ
A
2.0
—
—
4.0
1.1
V
GS(th)
DS
GS
D
R
Static Drain-Source
On-Resistance
= 10 V, I
= 3 A
0.9
Ω
DS(on)
GS
D
g
Forward Transconductance
V
= 40
V
, I
= 3 A
(Note 4)
—
4.7
—
S
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 25 V, V
= 0 V,
—
—
—
480
80
625
105
20
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
15
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
= 200
V
, I
= 6 A,
= 25
Ω
—
—
—
—
—
—
—
13
65
21
38
16
2.3
8.2
35
140
55
85
20
—
ns
ns
d(on)
DD D
G
r
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
V
V
= 320 V, I
= 6 A,
D
= 10 V
nC
nC
nC
g
DS
GS
gs
gd
—
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
—
—
—
—
—
—
—
6
24
1.4
—
A
A
S
I
SM
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I
= 6 A
—
V
SD
GS
S
t
= 0 V, I
= 6 A,
70
0.12
ns
μ
C
rr
GS
S
dI /
dt = 100 A/
μ
s
(Note 4)
F
—
Q
Reverse Recovery Charge
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7mH, I
= 6A, V
= 50V, R
= 25
Ω,
Starting T =
25°C
AS
DD
G
J
3. I
≤
6A, di/dt
≤
200A/
μ
s, V
≤
BV
Starting T =
25°C
J
SD
DD
DSS,
4. Pulse
T
e
st : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
10
0
10
-1
10
1
150
o
C
Bottom :
5.0 V
25
o
C
-55
o
C
10
0
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
* Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
10
-1
10
-1
10
0
10
1
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.5
3.0
10
1
10
0
10
-1
V
GS
= 10V
2.5
2.0
1.5
V
GS
= 20V
* Notes :
1. V
GS
= 0V
150
o
C
1.0
25
o
C
* Note : T
J
= 25
o
C
2. 250
μ
s Pulse Test
0.5
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1200
12
10
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
V
DS
= 80V
C
rss
= C
gd
1000
V
DS
= 200V
800
V
DS
= 320V
C
iss
600
6
C
oss
400
4
* Note ;
1. V
GS
= 0 V
C
rss
2. f = 1 MHz
200
2
* Note : I
D
= 6A
0
0
10
-1
10
0
10
1
0
5
10
15
20
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
1. V
G
S
= 0 V
0.9
0.8
* Notes :
1. V
GS
= 10 V
0.5
2. I
D
= 250
μ
A
2. I
D
= 3 A
0.0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C
]
Figure 9-1. Maximum Safe Operating Area
for FQP6N40CF
Figure 9-2. Maximum Safe Operating Area
for FQPF6N40CF
10
2
Operation in This Area
is Limited by R
DS(on)
10
2
Operation in This Area
is Limited by R
DS(on)
10
μ
s
10
μ
s
10
1
10
0
100
μ
s
10
1
10
0
10
-1
10
-2
100
μ
s
1 ms
10 ms
100 ms
1 ms
10 ms
100 ms
DC
DC
10
-1
* Notes :
1. T
C
= 25
o
2. T
J
= 150
o
3. Single Pulse
* Notes :
1. T
C
= 25
o
C
C
2. T
J
= 150
o
C
C
3. Single Pulse
10
-2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
4
Typical Performance Characteristics
(Continued)
Figure 11-1. ransient Thermal Response Curve for FQP6N40CF
1 0
0
1 0
–
1
1 0
–
2
D = 0
.
5
0
.
2
0
.
1
*
N o
t
e s
1 .
θ
J C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
Z
=
1
.
7 1
o
C
/
W
M a x .
0
.
0 5
3 .
T
J
M
–
T
C
=
P
D
* Z
θ
J C
(
t)
M
0
.
0 2
0
.
0 1
P
DM
s in g le
p u ls e
t
1
t
2
1 0
-5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF
D = 0
.
5
1 0
0
0
.
2
0
.
1
*
N o
t
e s
1 .
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
:
Z
=
3 .3 1
o
C
/
W
M a x .
0
.
0 5
1 0
-1
3 .
T
J M
–
T
C
=
P
D
* Z
θ
J
C
(
t)
M
0
.
0 2
0
.
0 1
P
DM
s in g le
p u ls e
t
1
t
2
1 0
-2
1 0
–
5
1 0
–
4
1 0
-3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©20
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Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
7
Mechanical Dimensions
TO-220
Dimensions in Millimeters
©20
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5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
8
Mechanical Dimensions
(Continued)
TO-220F
2.54
0.20
(0.70)
10.16
0.20
(7.00)
ø3.18
0.10
(1.00×45
°
)
MAX1.47
0.80
0.10
(30
°
)
#1
0.35
0.10
+0.10
–0.05
0.50
2.76
0.20
2.54TYP
2.54TYP
[2.54
0.20
]
[2.54
0.20
]
9.40
0.20
Dimensions in Millimeters
©20
0
5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Not In Production
Rev. I64
©20
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5
Fairchild Semiconductor Corporation
FQP
6
N
4
0C
F
/ FQPF
6N40C
F
Rev
. C0
