onsemi-FQU1N80TU
| Part # | onsemi-FQU1N80TU |
Download  | onsemi-FQU1N80TU |
January
201
4
FQD1N80
/ FQU1N80
N-Channel QFET
®
MOSFET
800 V,
1.0
A,
20
Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
1.0
A,
800
V, R
DS(on)
=
2
̀
0
Ω
(Max.) @ V
GS
= 10 V,
I
D
=
0.5
A
•
•
•
Low Gate Charge (Typ.
5.
5
nC)
Low Crss (Typ.
2.7
pF)
100% Avalanche Tested
D
D
G
I-PAK
G
S
D-PAK
G
D
S
S
Absolute Maximum Ratings
T =
25°C unless otherwise noted
.
C
Symbol
Parameter
FQD1N80
TM
/ FQU1N80TU
Unit
V
V
I
Drain-Source Voltage
800
1.0
DSS
– Continuous (T
= 25°C)
Drain Current
A
D
C
– Continuous (T
= 100°C)
0.63
4.0
A
C
I
(Note 1)
Drain Current
– Pulsed
A
DM
V
E
I
Gate-Source Voltage
±
30
90
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
1.0
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.5
mJ
V/ns
W
AR
dv/dt
4.0
Power Dissipation
(T =
25°C) *
2.5
P
A
D
Power Dissipation
(T =
25°C)
45
W
C
– Derate above 25°C
0.36
-55 to +150
W/°C
°C
T , T
Operating and Storage
T
e
mperature Range
Maximum lead temperature for soldering,
1/8
” f
rom case for 5 seconds
J
STG
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Unit
FQD1N80TM
/
FQU1N80TU
R
JC
R
JA
Thermal Resistance, Junction to Case, Max.
2.78
Thermal Resistance, Junction to Ambient (
M
inimum
P
ad of 2
–
oz
C
opper), Max.
Thermal Resistance, Junction to Ambient (*1 in
2
P
ad of 2
–
oz
C
opper), Max.
110
50
o
C/W
©200
9
Fairchild Semiconductor Corporation
FQD1N80
/ FQU1N80
Rev. C
2
1
Package Marking and Ordering Information
Part Number
FQD1N80TM
FQ
U
1N80T
U
Top Mark
FQD1N80
FQ
U
1N80
Package
D
–
PAK
I-
PAK
Packing Method
Reel Size
Tape Width
Quantity
2500 units
70
units
Tape and Reel
330 mm
16 mm
Tube
N/A
N/A
Electrical Characteristics
T =
25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
.
Typ
.
Max
.
Unit
Off Characteristics
BV
V
= 0
V
, I
=
2
50
µ
A
GS D
Drain-Source Breakdown Voltage
800
—
—
—
—
V
DSS
∆
BV
/
∆
T
Breakdown Voltage
T
e
mperature
Coefficient
DSS
I
= 250
µ
A, Referenced to 25°C
1.0
V/°C
D
J
I
V
V
V
V
= 800
V
, V
= 0 V
—
—
—
—
—
—
—
—
10
100
100
-100
µ
A
µ
A
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 640
V
, T
=
1
25°C
DS
GS
GS
C
I
I
= 30
V
, V
= 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
= -30
V
, V
= 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V
, I
= 250
µ
A
Gate Threshold Voltage
3.0
—
—
5.0
20
—
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
=
1
0
V
,
I =
0
.5
A
15.5
0.75
D
g
= 50
V
, I
=
0
.5 A
Forward Transconductance
—
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
150
20
195
26
pF
pF
pF
iss
V
= 25
V
, V
= 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
2.7
3.5
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
10
25
30
60
40
60
7.2
—
ns
ns
d(on)
V
= 400
V
, I
=
1
.0 A,
DD
D
r
R
= 25
Ω
G
15
ns
d(off)
f
(Note
4
)
(Note
4
)
25
ns
Q
Q
Q
5.5
1.1
3.3
nC
nC
nC
g
V
V
= 640
V
, I
=
1
.0 A,
DS
D
= 10 V
gs
gd
GS
—
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
—
—
—
—
—
—
—
1.0
4.0
1.4
—
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0
V
, I
=
1
.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
—
V
SD
GS
S
= 0
V
, I
=
1
.0 A,
300
0.6
ns
µ
C
rr
GS
S
dI /
dt = 100 A/
µ
s
Q
Reverse Recovery Charge
—
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 170 mH, I
= 1.0 A, V
= 50 V, R
= 25
Ω,
starting T =
25°C.
AS
DD
G
J
3.
I
≤
1.0 A, di/dt
≤
200 A/
µ
s, V
≤
BV starting
T =
25°C.
SD
DD
DSS, J
4. Essentially independent of operating temperature.
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
2
Typical Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
0
10
0
Bottom :
5.5 V
150
o
C
-1
10
25
o
C
-55
o
C
※
Notes :
※
Notes :
-2
10
μ
1. 250
s Pulse Test
1. V
D
S
= 50V
℃
2. T
C
= 25
μ
2. 250
s Pulse Test
-1
10
-1
10
10
0
10
1
8
2
4
6
10
V
GS
,
G
ate-Source Voltage [V]
V
DS
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
50
40
30
20
10
V
G
S
= 10V
V
G
S
= 20V
10
0
℃
150
℃
25
※
Notes :
1. V
GS
= 0V
※
℃
μ
Note : T
= 25
2. 250
s Pulse Test
J
-1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation
vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
250
200
150
100
50
12
10
8
C
iss
= C
g
s
+ C
g
d
(C
d
s
= shorted)
oss
= C
d
s
+ C
g
d
rss
= C
g
d
C
C
V
DS
= 160V
V
DS
= 400V
C
iss
V
DS
= 640V
6
C
oss
※
Notes :
4
1. V
G
S
= 0 V
2. f = 1 MHz
C
rss
2
※
Note : I
D
= 1.0 A
5
0
0
10
-1
10
0
10
1
0
1
2
3
4
6
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate
Charge Characteristics
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
3
(Continued)
Typical Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※
N
otes :
1. V
G
S
= 0 V
2. I
D
=
2
50
μ
A
※
Notes :
1. V
G
S
= 10 V
2. I
D
= 0.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C
]
T
J
, Junction Temperature [
o
C
]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
10
0
Operation in This Area
is Limited by R
D
S(on)
100
μ
s
1
m
s
10 ms
DC
-1
10
※
Notes :
1. T
C
= 25
o
2. T
J
= 150
o
3. Single Pulse
C
C
-2
10
10
0
10
1
10
2
10
3
25
50
75
100
125
150
℃
T
C
, Case Temperature [
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case
Temperature
D = 0
.
5
1 0
0
※
N o
t
e s
1 .
Z
θ
J
C
(
t)
2 .
D u
t
y
F a c to r,
D = t
1
/
t
2
3 .
T
J M
T
C
P
D
Z
θ
J
C
(
t)
:
0
.
2
℃
/W M
a x.
=
2
.
7 8
–
=
*
M
0
.
1
0
.
0 5
P
DM
1 0
–
1
0
.
0 2
0
.
0 1
t
1
s
i
n g le
p u ls e
t
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
v e
P u ls e
D u ra tio n
[s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
4
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
6
Mechanical Dimensions
Figure
16
. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
7
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
Mechanical Dimensions
Figure
17
. TO251 (I-PAK), Molded, 3-Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
8
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
9
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
