onsemi-FSB560
| Part # | onsemi-FSB560 |
| Download | onsemi-FSB560 |
October 2014
FSB560 / FSB560A
NPN Low-Saturation Transistor
Features
C
• These
devices are designed with high-current gain and low-saturation
voltage with collector currents up to 2 A continuous.
E
B
SuperSOT
TM
-3 (SOT-23)
Ordering Information
Part Number
FSB560
Marking
560
Package
SSOT 3L
SSOT 3L
Packing Method
T
a
pe and Reel
FSB560A
560A
T
a
pe and Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
80
V
5
V
Collector Current – Continuous
2
A
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150
°
C.
-55 to +150
°
C
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2001 Fairchild Semiconductor Corporation
FSB560 / FSB560A Rev. 1.1.0
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Max.
500
4
Unit
mW
T
o
tal Device Dissipation
Derate Above 25°C
mW/°C
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
250
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CBO
BV
EBO
Parameter
Conditions
Min.
60
Max.
Unit
V
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
C
= 100
μ
A, I
E
= 0
80
V
I
E
= 100
μ
A, I
C
= 0
5
V
V
CB
= 30 V, I
E
= 0
100
10
nA
μ
A
nA
I
CBO
I
EBO
Collector Cut-Off Current
Emitter Cut-Off Current
V
CB
= 30 V, I
E
= 0, T
A
= 100°C
V
EB
= 4 V, I
C
= 0
100
I
C
= 100 mA, V
CE
= 2 V
70
100
250
80
FSB560
300
550
I
C
= 500 mA, V
CE
= 2 V
h
FE
DC Current Gain
(4)
FSB560A
I
C
= 1 A, V
CE
= 2 V
I
C
= 2 A, V
CE
= 2 V
I
C
= 1 A, I
B
= 100 mA
40
300
350
300
1.25
1
Collector-Emitter Saturation
Voltage
(4)
V
CE
(sat)
FSB560
mV
I
C
= 2 A, I
B
= 200 mA
FSB560A
V
BE
(sat) Base-Emitter
Saturation Voltage
(4)
I
C
= 1 A, I
B
= 100 mA
I
C
= 1 A, V
CE
= 2 V
V
V
V
BE
(on)
C
obo
Base-Emitter On Voltage
(4)
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
I
C
= 100 mA, V
CE
= 5
V
,
f = 100 MHz
f
T
Transition Frequency
75
MHz
Note:
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%
© 2001 Fairchild Semiconductor Corporation
FSB560 / FSB560A Rev. 1.1.0
2
Typical Performance Characteristics
1.4
1.4
1.2
1
β = 10
V
ce
= 2.0V
1.2
1
– 40 °C
– 40 °C
0.8
0.8
0.6
0.4
0.2
25
°
C
0.6
0.4
0.2
25 °C
125 °C
125 °C
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
I
C
– COLLECTOR CURRENT (A)
I
C
– COLLECTOR CURRENT (A)
Figure 1. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base-Emitter On Voltage
vs. Collector Current
0.8
450
400
350
300
250
200
150
100
50
f
= 1.0 MHz
β = 10
0.6
C
ibo
25°C
125°C
0.4
– 40°C
0.2
C
obo
0
0
0.001
0.01
0.1
1
10
0.1 0.2
0.5
1
2
5
10 20
50 100
V
CE
– COLLECTOR VOLTAGE (V)
I
C
– COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Input / Output Capacitance
vs. Reverse Bias Voltage
400
700
600
500
400
300
200
100
0
V
CE
= 2 V
T
A
=150
o
C
FSB560
FSB560A
T
A
=125
o
C
300
200
100
0
25
o
C
V
CE
= 2 V
25
o
C
-40
o
C
-40
o
C
0.001
0.010
0.100
1.000
10.000
0.001
0.010
0.100
1.000
10.000
I
C
– COLLECTOR CURRENT [A]
I
C
– COLLECTOR CURRENT [A]
Figure 5. Current Gain vs. Collector Current
Figure 6. Current Gain vs. Collector Current
© 2001 Fairchild Semiconductor Corporation
FSB560 / FSB560A Rev. 1.1.0
3
Physical Dimensions
Figure 7. MOLDED PACKAGE, SUPERSO
T
,
3
-LEAD
© 2001 Fairchild Semiconductor Corporation
FSB560 / FSB560A Rev. 1.1.0
4
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2. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
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Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I71
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