onsemi-FSB560

Part #onsemi-FSB560
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onsemi-FSB560
October 2014  
FSB560 / FSB560A  
NPN Low-Saturation Transistor  
Features  
C
• These
 
devices are designed with high-current gain and low-saturation  
voltage with collector currents up to 2 A continuous.  
E
B
SuperSOT

TM

-3 (SOT-23)  
Ordering Information  
Part Number  
FSB560  
Marking  
560  
Package  
SSOT 3L  
SSOT 3L  
Packing Method  
T
a
pe and Reel  
FSB560A  
560A  
T
a
pe and Reel  
Absolute Maximum Ratings

(1),(2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
V

CEO  

V

CBO  

V

EBO  

I

C  

Parameter  
Value  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
80  
V
5
V
Collector Current – Continuous  
2
A
T

J

, T

STG

Operating and Storage Junction
T
e
mperature Range  
Notes:  
1. These ratings are based on a maximum junction temperature of 150
°
C.  
-55 to +150  
°
C  
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  
low-duty-cycle operations.  
© 2001 Fairchild Semiconductor Corporation  
FSB560 / FSB560A Rev. 1.1.0  

Thermal Characteristics

(3)  

Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
P

D  

Parameter  
Max.  
500  
4
Unit  
mW  
T
o
tal Device Dissipation  
Derate Above 25°C  
mW/°C  
°
C/W  
R

θ
JA  

Thermal Resistance, Junction-to-Ambient  
250  
Note:  
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
Electrical Characteristics  
Values are at T

A

= 25°C unless otherwise noted.  
Symbol  
BV

CEO  

BV

CBO  

BV

EBO  

Parameter  
Conditions  
Min.  
60  
Max.  
Unit  
V
Collector-Emitter Breakdown Voltage
 
I

C

= 10 mA, I

B

= 0  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
I

C

= 100
μ
A, I

E

= 0  
80  
V
I

E

= 100
μ
A, I

C

= 0  
5
V
V

CB

= 30 V, I

E

= 0  
100  
10  
nA  
μ
A  
nA  
I

CBO  

I

EBO  

Collector Cut-Off Current  
Emitter Cut-Off Current  
V

CB

= 30 V, I

E

= 0, T

A

= 100°C  
V

EB

= 4 V, I

C

= 0  
100  
I

C

= 100 mA, V

CE

= 2 V  
70  
100  
250  
80  
FSB560  
300  
550  
I

C

= 500 mA, V

CE

= 2 V  
h

FE  

DC Current Gain

(4)  

FSB560A  
I

C

= 1 A, V

CE

= 2 V  
I

C

= 2 A, V

CE

= 2 V  
I

C

= 1 A, I

B

= 100 mA  
40  
300  
350  
300  
1.25  
1
Collector-Emitter Saturation  
Voltage

(4)  

V

CE

(sat)  
FSB560  
mV  
I

C

= 2 A, I

B

= 200 mA  
FSB560A  
V

BE

(sat) Base-Emitter
 
Saturation Voltage

(4)  

I

C

= 1 A, I

B

= 100 mA  
I

C

= 1 A, V

CE

= 2 V  
V
V
V

BE

(on)  
C

obo  

Base-Emitter On Voltage

(4)  

Output Capacitance  
V

CB

= 10 V, I

E

= 0, f = 1.0 MHz  
30  
pF  
I

C

= 100 mA, V

CE

= 5
V
,  
f = 100 MHz  
f

T  

Transition Frequency  
75  
MHz  
Note:  
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2.0%  
© 2001 Fairchild Semiconductor Corporation  
FSB560 / FSB560A Rev. 1.1.0  
2

Typical Performance Characteristics  
1.4  
1.4  
1.2  
1
β = 10  
V

ce

= 2.0V  
1.2  
1
– 40 °C  
– 40 °C  
0.8  
0.8  
0.6  
0.4  
0.2  
25
°
C  
0.6  
0.4  
0.2  
25 °C  
125 °C  
125 °C  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
I

C

– COLLECTOR CURRENT (A)  
I

C

– COLLECTOR CURRENT (A)  
Figure 1. Base-Emitter Saturation Voltage  
vs. Collector Current  
Figure 2. Base-Emitter On Voltage  
vs. Collector Current  
0.8  
450  
400  
350  
300  
250  
200  
150  
100  
50  
f
= 1.0 MHz  
β = 10  
0.6  
C

ibo  

25°C  
125°C  
0.4  
– 40°C  
0.2  
C

obo  

0
0
0.001  
0.01  
0.1  
1
10  
0.1 0.2  
0.5  
1
2
5
10 20  
50 100  
V

CE

– COLLECTOR VOLTAGE (V)  
I

C

– COLLECTOR CURRENT (A)  
Figure 3. Collector-Emitter Saturation Voltage  
vs. Collector Current  
Figure 4. Input / Output Capacitance  
vs. Reverse Bias Voltage  
400  
700  
600  
500  
400  
300  
200  
100  
0
V

CE

= 2 V  
T

A

=150

o

C  
FSB560  
FSB560A  
T

A

=125

o

C  
300  
200  
100  
0
25

o

C  
V

CE

= 2 V  
25

o

C  
-40

o

C  
-40

o

C  
0.001  
0.010  
0.100  
1.000  
10.000  
0.001  
0.010  
0.100  
1.000  
10.000  
I

C

– COLLECTOR CURRENT [A]  
I

C

– COLLECTOR CURRENT [A]  
Figure 5. Current Gain vs. Collector Current  
Figure 6. Current Gain vs. Collector Current  
© 2001 Fairchild Semiconductor Corporation  
FSB560 / FSB560A Rev. 1.1.0  
3

Physical Dimensions  
Figure 7. MOLDED PACKAGE, SUPERSO
T
,
3
-LEAD  
© 2001 Fairchild Semiconductor Corporation  
FSB560 / FSB560A Rev. 1.1.0  
4

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DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. T
O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE  
AT
HTTP://WWW.FAIRCHILDSEMI.COM.
FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY  
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY  
THEREIN, WHICH COVERS THESE PRODUCTS.  
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life
 
support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain  
life, and (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the user.  
2. A
 
critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change  
in any manner without notice.  
Advance Information  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve the design.  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Preliminary  
No Identification Needed  
Obsolete  
First Production  
Full Production  
Not In Production  
Rev. I71  
© Fairchild Semiconductor Corporation